Selective etching device

Abstract

The present invention provides an apparatus for producing finished sliders, the apparatus including a physical and chemical etching device, and a controller to direct the chemical and physical etching device onto a substrate consisting of a plurality of materials. The physical and chemical etch device provides a uniform etch rate throughout the plurality of materials in the substrate while also providing a desired property level of each of the plurality of materials.

What is claimed is:  
     
         1 . An apparatus for use in slider fabrication comprising: 
 at least one fully exposed substrate having an air bearing surface;    a plurality of materials exposed on the air bearing surface;    a plurality of etching devices, wherein the plurality of etching devices comprise a physical etch component and a chemical etch component;    a controller for directing the physical etch component and the chemical etch component at the air bearing surface, wherein the physical etch component and chemical etch component provides a uniform etch rate throughout the plurality of materials    
     
     
         2 . The apparatus of  claim 1 , wherein the plurality of materials comprise: 
 a first portion comprising AlTiC;    a second portion comprising transducing materials; and    a third portion comprising alumina.    
     
     
         3 . The apparatus of  claim 1 , wherein the physical etch component comprises a primary process gas selected from a group comprising of Ar +  and Xe + .  
     
     
         4 . The apparatus of  claim 3 , wherein the physical etch component further comprises a high acceleration energy of approximately 100 eV to 5000 eV.  
     
     
         5 . The apparatus of  claim 1 , wherein the chemical etch component comprises a localized flood gas apparatus.  
     
     
         6 . The apparatus of  claim 1 , wherein the chemical etch component comprises a process gas selected from a group comprising of O 2 , F 2  and XeF 2 .  
     
     
         7 . The apparatus of  claim 1 , wherein the chemical etch component comprises a primary process gas selected from a group comprising SF 6 , CF 4 , O 2 .  
     
     
         8 . The apparatus of  claim 7 , wherein the chemical etch component further comprises a low acceleration energy of approximately 100 eV to 500 eV.  
     
     
         9 . The apparatus of  claim 1  further comprising a stage and a carrier, wherein the plurality of substrates are attached to the carrier and the carrier is attached to the stage, further wherein the stage is connected to the controller.  
     
     
         10 . The apparatus of  claim 9 , wherein the physical etch device is a focused ion beam.  
     
     
         11 . The apparatus of  claim 10  further comprising a probe attached between the substrate and the controller.  
     
     
         12 . The apparatus of  claim 11 , wherein the controller monitors a property level of the substrate, the property level selected from a group comprising cleanliness, resitivity, planarity, and pole tip characteristics.  
     
     
         13 . The apparatus of  claim 9  further comprising a shutter system including a plurality of shutters, wherein the shutter system is positioned between the chemical and etch device and the substrate, further wherein the shutter system is connected to the controller.  
     
     
         14 . The apparatus of  claim 13 , wherein the physical etch device is a broad ion beam.  
     
     
         15 . The apparatus of  claim 14  further comprising a probe connected between the controller and the substrate.  
     
     
         16 . The apparatus of  claim 15 , wherein the controller monitors a property level of the substrate, the property level selected from a group comprising cleanliness, resitivity, planarity, and pole tip characteristics.  
     
     
         17 . An apparatus for use in slider fabrication comprising: 
 at least one fully exposed substrate having an air bearing surface;    a transducing element on the air bearing surface;    a first etching device including a reactant capable of producing a physical etch;    a second etching device including a reactant capable of producing a chemical etch;    a controller for directing the first and second process gas at the air bearing surface, wherein the first and second etching device provide a uniform etch rate throughout the entire air bearing surface.    
     
     
         18 . The apparatus of  claim 17 , wherein the substrate includes a plurality of materials and the plurality of materials comprise: 
 a first portion comprising AlTiC;    a second portion comprising transducing materials; and    a third portion comprising alumina.    
     
     
         19 . The apparatus of  claim 17 , wherein the physical etch component comprises a primary process gas selected from a group comprising of Ar +  and Xe + .  
     
     
         20 . The apparatus of  claim 19 , wherein the physical etch component further comprises a high acceleration energy of approximately 100 eV to 5000 eV.  
     
     
         21 . The apparatus of  claim 17 , wherein the chemical etch component comprises a localized flood gas apparatus.  
     
     
         22 . The apparatus of  claim 17 , wherein the chemical etch component comprises a process gas selected from a group comprising of O 2 , F 2  and XeF 2 .  
     
     
         23 . The apparatus of  claim 17 , wherein the chemical etch component comprises a primary process gas selected from a group comprising SF 6 , CF 4 , O 2 .  
     
     
         24 . The apparatus of  claim 23 , wherein the chemical etch component further comprises a low acceleration energy of approximately 100 eV to 500 eV.  
     
     
         25 . The apparatus of  claim 17  further comprising a stage and a carrier, wherein the plurality of substrates are attached to the carrier and the carrier is attached to the stage, further wherein the stage is connected to the controller.  
     
     
         26 . The apparatus of  claim 25 , wherein the physical etch device is a focused ion beam.  
     
     
         27 . The apparatus of  claim 26  further comprising a probe attached between the substrate and the controller.  
     
     
         28 . The apparatus of  claim 27 , wherein the controller monitors a property level of the substrate, the property level selected from a group comprising cleanliness, resitivity, planarity, and pole tip characteristics.  
     
     
         29 . The apparatus of  claim 25  further comprising a shutter system including a plurality of shutters, wherein the shutter system is positioned between the chemical and etch device and the substrate.  
     
     
         30 . The apparatus of  claim 29 , wherein the shutter system is connected to the controller.  
     
     
         31 . The apparatus of  claim 30  further comprising a probe connected between the controller and the substrate.  
     
     
         32 . The apparatus of  claim 31 , wherein the controller monitors a property level of the substrate, the property level selected from a group comprising cleanliness, resitivity, planarity, and pole tip characteristics.  
     
     
         33 . A method for producing magnetoresitive heads comprising the steps of: 
 providing at least one fully exposed substrate having an air bearing surface, wherein the air bearing surface has at least one transducing element;    directing a physical reactant and a chemical reactant at the entire air bearing surface;    monitoring a property level of the at least one transducer until the property level of the transducing element reaches a desired level.