US2004043601A1PendingUtilityA1

Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer

42
Priority: Aug 23, 2002Filed: Jul 8, 2003Published: Mar 4, 2004
Est. expiryAug 23, 2022(expired)· nominal 20-yr term from priority
Inventors:Hee-Sook ParkGil-Heyun ChoiSang-Bum KangSeong-Geon ParkKwang-Jin Moon
H10P 14/44H10P 14/43H10D 64/0112H10W 20/049H10W 20/047H10W 20/035H10W 20/033H10D 64/011H10D 64/01125
42
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Claims

Abstract

A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.

Claims

exact text as granted — not AI-modified
That which is claimed:  
     
         1 . A method of forming a metal contact in a semiconductor device, comprising: 
 forming an insulating layer having a contact hole therein on a silicon substrate;    forming a cobalt layer on a bottom and inner walls of the contact hole;    forming a cobalt silicide layer at the bottom of the contact hole while forming a titanium layer on the cobalt layer; and    forming a plug on the titanium layer so as to fill the contact hole.    
     
     
         2 . The method of  claim 1 , wherein the plug comprises titanium nitride.  
     
     
         3 . The method of  claim 1 , further comprising: 
 forming a titanium nitride layer on the titanium layer; and    wherein forming the plug comprises: 
 forming the plug on the titanium nitride layer so as to fill the contact hole.  
   
     
     
         4 . The method of  claim 3 , wherein the titanium nitride layer has a thickness of about 50 to 500 Å.  
     
     
         5 . The method of  claim 4 , wherein the titanium nitride layer is formed using chemical vapor deposition (CVD) at a temperature of about 400 to 750° C.  
     
     
         6 . The method of  claim 3 , wherein the plug comprises at least one of tungsten, titanium nitride, aluminum, and tantalum nitride.  
     
     
         7 . The method of  claim 3 , wherein the cobalt layer, the titanium layer, and the titanium nitride layer are formed in situ without a vacuum break.  
     
     
         8 . The method of  claim 1 , wherein the cobalt layer has a thickness of about 5 to 200 Å.  
     
     
         9 . The method of  claim 1 , wherein the cobalt layer is formed using one of physical vapor deposition (PVD) and chemical vapor deposition (CVD).  
     
     
         10 . The method of  claim 9 , wherein the cobalt layer is formed using PVD at a temperature of about 25 to 500° C.  
     
     
         11 . The method of  claim 1 , wherein the titanium layer has a thickness of about 5 to 150 Å.  
     
     
         12 . The method of  claim 1 , wherein the titanium layer is formed using chemical vapor deposition (CVD) at a temperature of about 400 to 750° C.  
     
     
         13 . The method of  claim 1 , wherein substrate and insulating layer are cleaned after forming the insulating layer.  
     
     
         14 . A method of forming a metal contact in a semiconductor device, comprising: 
 forming an insulating layer having a contact hole therein on a silicon substrate;    forming a cobalt layer on a bottom and inner walls of the contact hole;    forming a cobalt silicide layer at the bottom of the contact hole while forming a titanium nitride layer on the cobalt layer; and    forming a plug on the titanium nitride layer so as to fill the contact hole.    
     
     
         15 . The method of  claim 14 , wherein the titanium nitride layer has a thickness of about 50 to 150 Å.  
     
     
         16 . The method of  claim 14 , wherein the titanium nitride layer is formed using chemical vapor deposition (CVD) at a temperature of about 400 to 750° C.  
     
     
         17 . The method of  claim 14 , wherein the plug comprises at least one of tungsten, titanium nitride, aluminum, and tantalum nitride.  
     
     
         18 . The method of  claim 14 , wherein the cobalt layer and the titanium nitride layer are formed in situ without a vacuum break.  
     
     
         19 . The method of  claim 14 , wherein the cobalt layer has a thickness of about 5 to 200 Å.  
     
     
         20 . The method of  claim 14 , wherein the cobalt layer is formed using one of physical vapor deposition (PVD) and chemical vapor deposition (CVD).  
     
     
         21 . The method of  claim 20 , wherein the cobalt layer is formed using PVD at a temperature of about 25 to 500° C.  
     
     
         22 . The method of  claim 14  wherein substrate and insulating layer are cleaned after forming the insulating layer.  
     
     
         23 . A method of forming a metal contact in a semiconductor device, comprising: 
 forming an insulating layer having a contact hole therein on a silicon substrate;    forming a cobalt layer on a bottom and inner walls of the contact hole; and    forming a cobalt silicide layer at the bottom of the contact hole while forming a plug that fills the contact hole on the cobalt layer.    
     
     
         24 . The method of  claim 23 , wherein the plug comprises titanium nitride.  
     
     
         25 . The method of  claim 24 , wherein the plug has a thickness of about 20 to 3000 Å.  
     
     
         26 . The method of  claim 23 , wherein the cobalt layer and the plug are formed in situ without a vacuum break.  
     
     
         27 . A method of forming a metal contact in a semiconductor device, comprising: 
 forming an insulating layer having a contact hole therein on a silicon substrate;    forming a titanium layer on a bottom and inner walls of the contact hole;    forming a cobalt layer on the titanium layer;    forming a complex silicide layer comprising titanium suicide and cobalt silicide at the bottom of the contact hole while forming a titanium nitride layer on the cobalt layer; and    forming a plug on the titanium nitride layer so as to fill the contact hole.    
     
     
         28 . The method of  claim 27 , wherein the plug comprises at least one of tungsten, titanium nitride, aluminum, and tantalum nitride.  
     
     
         29 . The method of  claim 27 , wherein the titanium nitride layer has a thickness of about 50 to 500 Å.  
     
     
         30 . The method of  claim 27 , wherein the titanium nitride layer is formed using chemical vapor deposition (CVD) at a temperature of about 400 to 750° C.  
     
     
         31 . The method of  claim 27 , wherein the titanium layer, the cobalt layer, and the titanium nitride layer are formed in situ without a vacuum break.  
     
     
         32 . The method of  claim 27 , wherein the cobalt layer has a thickness of about 5 to 200 Å.  
     
     
         33 . The method of  claim 27 , wherein the cobalt layer is formed using one of physical vapor deposition (PVD) and chemical vapor deposition (CVD).  
     
     
         34 . The method of  claim 33 , wherein the cobalt layer is formed using PVD at a temperature of about 25 to 500° C.  
     
     
         35 . The method of  claim 27 , wherein the titanium layer has a thickness of about 5 to 150 Å.  
     
     
         36 . The method of  claim 27 , wherein the titanium layer is formed using chemical vapor deposition (CVD) at a temperature of about 400 to 750° C.  
     
     
         37 . The method of  claim 27 , wherein substrate and insulating layer are cleaned after forming the insulating layer.  
     
     
         38 . A method of forming a metal contact in a semiconductor device, comprising: 
 forming an insulating layer having a contact hole therein on a silicon substrate;    forming a titanium layer on a bottom and inner walls of the contact hole;    forming a cobalt layer on the titanium layer; and    forming a complex silicide layer comprising titanium silicide and cobalt silicide at the bottom of the contact hole while forming a plug that fills the contact hole on the cobalt layer.    
     
     
         39 . The method of  claim 38 , wherein the plug comprises titanium nitride.  
     
     
         40 . The method of  claim 39 , wherein the plug has a thickness of about 20 to 3000 Å.  
     
     
         41 . The method of  claim 38 , wherein the titanium layer, the cobalt layer, and the plug are formed in situ without a vacuum break.

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