Carbon doped oxide deposition

Abstract

Carbon doped oxide (CDO) deposition. One method of deposition includes providing a substrate and introducing oxygen to a carbon doped oxide precursor in the presence of the substrate. A carbon doped oxide film is formed on the substrate. In another method the substrate is placed on a susceptor of a chemical vapor deposition apparatus. A background gas is introduced along with the carbon doped oxide precursor and oxygen to form the carbon doped oxide film on the substrate.

We claim:  
     
         1 . A method comprising: 
 providing a substrate; and    introducing oxygen to a carbon doped oxide precursor in the presence of said substrate for deposition of a carbon doped oxide film on said substrate.    
     
     
         2 . The method of  claim 1  wherein said carbon doped oxide precursor is selected from a group consisting of tetramethylcyclotetrasiloxane, a precursor having a formula of H x Si(CH 3 ) 4−x , and a precursor having a formula of (CH 3 ) x Si(OCH 3 ) 4−x.    
     
     
         3 . The method of  claim 1  wherein said oxygen is selected from a group consisting of ionic oxygen, molecularly stable oxygen, elementally stable oxygen, and ozone.  
     
     
         4 . The method of  claim 1  wherein said introducing comprises adding an inert background gas in the presence of said substrate to provide a volume filler for said deposition of said carbon doped oxide film.  
     
     
         5 . The method of  claim 1  wherein said introducing is via a chemical vapor deposition apparatus.  
     
     
         6 . The method of  claim 1  wherein said carbon doped oxide film has a dielectric constant of less than about 3.0.  
     
     
         7 . The method of  claim 1  wherein said deposition of said carbon doped oxide film occurs at a rate exceeding about 5,620 angstroms per minute.  
     
     
         8 . The method of  claim 1  further comprising etching said carbon doped oxide film for deposition of conductive lines, said carbon doped oxide film to act as an inter-layer dielectric between said conductive lines  
     
     
         9 . A method of forming a carbon doped oxide film on a substrate, said method comprising: 
 placing said substrate on a susceptor of a chemical vapor deposition apparatus;    introducing a background gas, a carbon doped oxide precursor and oxygen into said apparatus; and    operating said apparatus at conditions to cause said carbon doped oxide film to form on said substrate.    
     
     
         10 . The method of  claim 9  wherein said carbon doped oxide precursor is selected from a group consisting of tetramethylcyclotetrasiloxane, a precursor having a formula of H x Si(CH 3 ) 4−x , and a precursor having a formula of (CH 3 ) x Si(OCH 3 ) 4−x.    
     
     
         11 . The method of  claim 9  wherein said conditions include a temperature of between about 250° C. and about 450° C. of said susceptor.  
     
     
         12 . The method of  claim 9  wherein said conditions include a pressure within said apparatus of between about 2 Torr and about 10 Torr.  
     
     
         13 . The method of  claim 9  wherein said background gas is inert helium.  
     
     
         14 . The method of  claim 9  wherein said introducing includes a flow rate of between about 50 Sccm and about 200 Sccm of said carbon doped oxide precursor, a flow rate of between about 20 Sccm and about 200 Sccm of said background gas, and a flow rate of between about 1.0 Sccm and about 20 Sccm of said oxygen.  
     
     
         15 . The method of  claim 9  wherein said chemical vapor deposition apparatus is a plasma enhanced chemical vapor deposition apparatus.  
     
     
         16 . The method of  claim 9  wherein said carbon doped oxide film is dimethyldimethoxysilane.  
     
     
         17 . A carbon doped oxide film to be formed on a substrate from a carbon doped oxide precursor in the presence of oxygen.  
     
     
         18 . The carbon doped oxide film of  claim 17  to act as an inter-layer dielectric between conductive lines deposited on said substrate following etching of said carbon doped oxide film.  
     
     
         19 . The carbon doped oxide film of  claim 17  having a dielectric constant of less than about 3.0.  
     
     
         20 . The carbon doped oxide film of  claim 17  formed at a rate exceeding about 5,620 angstroms per minute on said substrate.