US2004038632A1PendingUtilityA1
Conditioner of chemical-mechanical polishing station
Priority: Aug 23, 2002Filed: Sep 12, 2002Published: Feb 26, 2004
Est. expiryAug 23, 2022(expired)· nominal 20-yr term from priority
Inventors:Chi-Feng Cheng
H10P 52/402B24B 53/017
35
PatentIndex Score
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Claims
Abstract
A conditioner for conditioning the polishing pad of a chemical-mechanical polishing station. The conditioner includes a conditioning disk having an input surface and an output surface, a tube with one end attached to the input surface of the conditioning disk, a high-pressure fluid supplier connected to the other end of the tube and a plurality of nozzles positioned on the output surface of the conditioning disk.
Claims
exact text as granted — not AI-modified1 . A conditioner for conditioning the polishing pad of a chemical-mechanical polishing station, comprising:
a conditioning disk having an input surface and an output surface; a tube having one end connected to the input surface of the conditioning disk; a high-pressure fluid supplier connected to the other end of the tube; and a plurality of nozzles on the output surface of the conditioning disk.
2 . The conditioner of claim 1 , wherein the high-pressure fluid supplier is a pressurized liquid supplier.
3 . The conditioner of claim 2 , wherein the pressurized liquid supplier provides a pressurized liquid including water.
4 . The conditioner of claim 2 , wherein the pressurized liquid supplier provides a liquid at a pressure between 10 psi to 100 psi.
5 . The conditioner of claim 1 , wherein the high-pressure fluid supplier is a pressurized gas supplier.
6 . The conditioner of claim 5 , wherein the pressurized gas supplier provides a pressurized gas including nitrogen.
7 . The conditioner of claim 5 , wherein the pressurized gas supplier provides a gas at a pressure between 10 psi to 100 psi.
8 . A chemical-mechanical polishing station, comprising:
a polishing table; a polishing pad over the polishing table; a wafer carrier over the polishing pad for gripping a wafer and pressing the front surface of the wafer against the upper surface of the polishing pad; a slurry tube over the polishing pad for delivering slurry to the polishing pad; and a conditioner over the polishing pad for conditioning the polishing pad, wherein the conditioner further includes:
a conditioning disk having an input surface and an output surface;
a tube having one end connected to the input surface of the conditioning disk;
a high-pressure fluid supplier connected to the other end of the tube; and
a plurality of nozzles on the output surface of the conditioning disk.
9 . The polishing station of claim 8 , wherein the high-pressure fluid supplier is a pressurized liquid supplier.
10 . The polishing station of claim 9 , wherein the pressurized liquid supplier provides a pressurized liquid including water.
11 . The polishing station of claim 9 , wherein the pressurized liquid supplier provides a liquid at a pressure between 10 psi to 100 psi.
12 . The polishing station of claim 8 , wherein the high-pressure fluid supplier is a pressurized gas supplier.
13 . The polishing station of claim 12 , wherein the pressurized gas supplier provides a pressurized gas including nitrogen.
14 . The polishing station of claim 12 , wherein the pressurized gas supplier provides a gas at a pressure between 10 psi to 100 psi.Join the waitlist — get patent alerts
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