US2004038632A1PendingUtilityA1

Conditioner of chemical-mechanical polishing station

Priority: Aug 23, 2002Filed: Sep 12, 2002Published: Feb 26, 2004
Est. expiryAug 23, 2022(expired)· nominal 20-yr term from priority
Inventors:Chi-Feng Cheng
H10P 52/402B24B 53/017
35
PatentIndex Score
0
Cited by
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References
0
Claims

Abstract

A conditioner for conditioning the polishing pad of a chemical-mechanical polishing station. The conditioner includes a conditioning disk having an input surface and an output surface, a tube with one end attached to the input surface of the conditioning disk, a high-pressure fluid supplier connected to the other end of the tube and a plurality of nozzles positioned on the output surface of the conditioning disk.

Claims

exact text as granted — not AI-modified
1 . A conditioner for conditioning the polishing pad of a chemical-mechanical polishing station, comprising: 
 a conditioning disk having an input surface and an output surface;    a tube having one end connected to the input surface of the conditioning disk;    a high-pressure fluid supplier connected to the other end of the tube; and    a plurality of nozzles on the output surface of the conditioning disk.    
     
     
         2 . The conditioner of  claim 1 , wherein the high-pressure fluid supplier is a pressurized liquid supplier.  
     
     
         3 . The conditioner of  claim 2 , wherein the pressurized liquid supplier provides a pressurized liquid including water.  
     
     
         4 . The conditioner of  claim 2 , wherein the pressurized liquid supplier provides a liquid at a pressure between 10 psi to 100 psi.  
     
     
         5 . The conditioner of  claim 1 , wherein the high-pressure fluid supplier is a pressurized gas supplier.  
     
     
         6 . The conditioner of  claim 5 , wherein the pressurized gas supplier provides a pressurized gas including nitrogen.  
     
     
         7 . The conditioner of  claim 5 , wherein the pressurized gas supplier provides a gas at a pressure between 10 psi to 100 psi.  
     
     
         8 . A chemical-mechanical polishing station, comprising: 
 a polishing table;    a polishing pad over the polishing table;    a wafer carrier over the polishing pad for gripping a wafer and pressing the front surface of the wafer against the upper surface of the polishing pad;    a slurry tube over the polishing pad for delivering slurry to the polishing pad; and    a conditioner over the polishing pad for conditioning the polishing pad, wherein the conditioner further includes: 
 a conditioning disk having an input surface and an output surface;  
 a tube having one end connected to the input surface of the conditioning disk;  
 a high-pressure fluid supplier connected to the other end of the tube; and  
 a plurality of nozzles on the output surface of the conditioning disk.  
   
     
     
         9 . The polishing station of  claim 8 , wherein the high-pressure fluid supplier is a pressurized liquid supplier.  
     
     
         10 . The polishing station of  claim 9 , wherein the pressurized liquid supplier provides a pressurized liquid including water.  
     
     
         11 . The polishing station of  claim 9 , wherein the pressurized liquid supplier provides a liquid at a pressure between 10 psi to 100 psi.  
     
     
         12 . The polishing station of  claim 8 , wherein the high-pressure fluid supplier is a pressurized gas supplier.  
     
     
         13 . The polishing station of  claim 12 , wherein the pressurized gas supplier provides a pressurized gas including nitrogen.  
     
     
         14 . The polishing station of  claim 12 , wherein the pressurized gas supplier provides a gas at a pressure between 10 psi to 100 psi.

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