Semiconductor interlayer dielectric material and a semiconductor device using the same

Abstract

The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film. The present invention also provides an organic silicate polymer having a flexible organic bridge unit in the network prepared by the resin composition of the component (a) and the component (b), wherein component (a) is an organosilane of the formula R 1 m R 2 n SiX 4−m−n (where each of R 1 and R 2 which may be the same or different, is a non-hydrolysable group; X is a hydrolysable group; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3) and/or a partially hydrolyzed condensate thereof and wherein component (b) is an organic bridged silane of the formula R 3 p Y 3−p Si-M-SiR 4 q Z 3−q (where each of R 3 and R 4 which may be the same or different, is a non-hydrolysable group; each of Y and Z which may be the same or different, is a hydrolysable group; and p and q are integers of from 0 to 2) and/or a cyclic oligomer with organic bridge unit (Si-M-Si).

What is claimed is:  
     
         1 . An organic silicate polymer for an interlayer insulating film for a semiconductor device, wherein the organic silicate polymer comprises a carbon bridge unit in a network and is prepared by a cross-linking reaction between a component (a) and a component (b), wherein: 
 component (a) comprises an organosilane of the formula R 1   m R 2   n SiX 4−m−n  wherein each of R 1  and R 2  which may be the same or different, is a non-hydrolysable group selected from the group consisting of hydrogen, alkyl, fluorine-containing alkyl, and aryl; X comprises a hydrolysable group selected from the group consisting of halide, alkoxy, and acyloxy; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3, or a partially hydrolyzed condensate thereof; and    component (b) comprises an organic bridged silane of the formula R 3   p Y 3−p Si-M-SiR 4   q Z 3−q  wherein each of R 1  and R 4  which may be the same or different, comprises a non-hydrolysable group selected from the group consisting of hydrogen, alkyl, fluorine-containing alkyl, alkenyl, and aryl; each of Y and Z which may be the same or different, comprises a hydrolysable group selected from the group consisting of halide, alkoxy, and acyloxy; M comprises an alkylene group comprising from two to three carbon atoms; and p and q are integers of from 0 to 2.    
     
     
         2 . The organic silicate polymer according to  claim 1 , wherein M comprises an ethylene group.  
     
     
         3 . The organic silicate polymer according to  claim 1 , wherein the organic bridged silane is synthesized by reacting a silane monomer comprising a Si—H with a silane monomer comprising an aliphatic unsaturated hydrocarbon carbon group of formula —CH═CH 2  in the presence of a catalyst.  
     
     
         4 . The organic silicate polymer according to  claim 1 , wherein the organic silicate polymer has a weight average molecular weight of from 500 to 100,000.  
     
     
         5 . The organic silicate polymer according to  claim 1 , wherein the partially hydrolyzed condensate of the organosilane is obtained by a reaction of the organosilane in an organic solvent after addition of water and a catalyst.  
     
     
         6 . The organic silicate polymer according to  claim 1 , wherein more than 5 parts by weight of the component (b) is present per 100 parts by weight of the component (a).  
     
     
         7 . An organic silicate polymer for an interlayer insulating film for a semiconductor device, which has a carbon bridge unit in the network and is prepared by a cross-linking reaction between component (a) and component (b), wherein: 
 component (a) comprises an organosilane of the formula R 1   m R 2   n SiX 4−m−n  wherein each of R 1  and R 2  which may be the same or different, comprises a non-hydrolysable group selected from the group consisting of hydrogen, alkyl, fluorine-containing alkyl, and aryl group; X comprises a hydrolysable group selected from the group consisting of halide, alkoxy, and acyloxy; and m and n are integers of from 0 to 3 satisfying 0≦m+n≦3, or a partially hydrolyzed condensate thereof; and    component (b) comprises a cyclic silane oligomer comprising a carbon bridge unit (Si-M-Si) wherein M comprises an alkylene group comprising from two to three carbon atoms.    
     
     
         8 . The organic silicate polymer according to  claim 7 , wherein M comprises an ethylene group.  
     
     
         9 . The organic silicate polymer according to  claim 7 , wherein the cyclic silane oligomer comprising a carbon bridge unit (Si-M-Si) is synthesized by reacting a silane monomer containing a Si—H with a silane monomer containing aliphatic unsaturated hydrocarbon group of formula —CH═CH 2  in the presence of a catalyst.  
     
     
         10 . The organic silicate polymer according to  claim 9 , wherein the cyclic silane oligomer comprising a carbon bridge unit (Si-M-Si) is synthesized by a hydrosilyation reaction of one or more oligomers of ring structure (I):  
       
         
           
           
               
               
           
         
       
       wherein L 1  comprises an alkenyl group comprising 2 to three carbon atoms, and L 2  is selected from the group consisting of hydrogen, alkyl, and aryl.  
     
     
         11 . The organic silicate polymer according to  claim 9 , wherein the cyclic silane oligomer comprising a carbon bridge unit (Si-M-Si) is synthesized by a hydrosilyation reaction of one or more oligomers of ring structure (II):  
       
         
           
           
               
               
           
         
       
       wherein M 1  comprises an alkenyl group comprising two to three carbon atoms, and M 2  is selected from the group consisting of hydrogen, alkyl, and aryl.  
     
     
         12 . The organic silicate polymer according to  claim 9 , wherein the cyclic silane oligomer with carbon bridge unit (Si-M-Si) is synthesized by a hydrosilyation reaction of an oligomer of ring structure (I) and an oligomer of ring structure (II):  
       
         
           
           
               
               
           
         
       
       wherein L 1  comprises an alkenyl group comprising two to three carbon atoms; L 2  is selected from the group consisting of hydrogen, alkyl, and aryl; M 1  comprises an alkenyl group comprising two to three carbon atoms or an or allyl group comprising two to three carbon atoms; and M 2  is selected from the group consisting of hydrogen, alkyl, and aryl.  
     
     
         13 . The organic silicate polymer according to  claim 7 , wherein the organic silicate polymer has a weight average molecular weight of from 500 to 100,000.  
     
     
         14 . The organic silicate polymer according to  claim 7 , wherein more than 5 parts by weight of the component (b) is present per 100 parts by weight of the component (a).  
     
     
         15 . An interlayer dielectric film for a semiconductor device comprising the organic silicate polymer of  claim 1 .  
     
     
         16 . An interlayer dielectric film for a semiconductor device comprising the organic silicate polymer of  claim 7 .  
     
     
         17 . A semiconductor device comprising the interlayer dielectric film of  claim 15 .  
     
     
         18 . A semiconductor device comprising the interlayer dielectric film of  claim 16 .  
     
     
         19 . A process for preparing an interlayer dielectric film for a semiconductor device comprising the steps of: 
 a) dissolving the organic silicate polymer of  claim 1  in a solvent, whereby a dissolved solution is obtained;    b) spin coating the dissolved solution obtained in step a) on a substrate to form a coating film;    c) drying the coating film obtained in step b) to obtain a dried film; and    d) curing the dried film obtained in step c) at a temperature of 300 to 500° C.    
     
     
         20 . A semiconductor device comprising the interlayer dielectric film prepared according to the process of  claim 19.