Methods for repairing defects on a semiconductor substrate

Abstract

The present invention relates to methods for repairing defects on a semiconductor substrate. This is accomplished by selectively depositing the conductive material in defective portions in the cavities while removing residual portions from the field regions of the substrate. Another method according to the present invention includes forming a uniform conductive material overburden on a top surface of the substrate. The present invention also discloses a method for depositing a second conductive material on the first conductive material of the substrate.

What is claimed is:  
     
         1 . A method for forming a uniform overburden conductive layer over a non-planar first conductive material on a substrate having a barrier layer and a seed layer, the method using an anode and a pad and comprising the steps: 
 applying the pad proximate to the substrate surface;    applying an electric field between the anode and the first conductive material; and    depositing a second conductive material from a solution over the first conductive material to form the uniform overburden conductive layer.    
     
     
         2 . The method according to  claim 1 , wherein the first and second conductive materials comprise a same material.  
     
     
         3 . The method according to  claim 1 , wherein the first conductive material comprises Cu and second conductive material comprises one of copper alloy, cobalt alloy, and silver alloy.  
     
     
         4 . The method according to  claim 3 , further comprising the step of depositing a boundary layer between the first conductive material and the second conductive material such that the first conductive material does not intermix with the second conductive material.  
     
     
         5 . The method according to  claim 1 , further comprising the step of polishing the uniform overburden conductive layer using chemical mechanical polishing.  
     
     
         6 . A method of correcting a non-uniform first deposited conductive material formed on a conductive surface of a substrate comprising the steps: 
 coating the first deposited conductive material with a second conductive material; and    planarizing the second conductive material and the second conductive material to form a substantially uniform conductive surface on the substrate.    
     
     
         7 . The method according to  claim 6 , wherein the step of coating includes electroless depositing the second conductive material over the first conductive material.  
     
     
         8 . The method according to  claim 6  further comprising a pad and an anode wherein the step of coating includes: 
 applying the pad proximate to at least one non-uniform portion of the conductive surface;  
 applying an electric field between the anode and the substrate; and  
 depositing the second conductive material from a solution to the at least one non-uniform portion of the conductive surface to form the substantially uniform conductive surface.  
 
     
     
         9 . The method according to  claim 8 , wherein the pad includes fixed abrasive particles.  
     
     
         10 . The method according to  claim 8 , wherein the substrate includes field regions and the method of depositing the second conductive material includes the step of removing residual conductive materials from the field regions.  
     
     
         11 . The method according to  claim 8 , wherein the conductive surface and the conductive material comprise a same material.  
     
     
         12 . The method according to  claim 8 , wherein the conductive material comprises an alloy.  
     
     
         13 . The method according to  claim 8 , wherein the pad includes a porous material.  
     
     
         14 . The method according to  claim 8  further comprising the step of applying a thermal process to the substrate after the depositing step.  
     
     
         15 . The method according to  claim 8 , wherein the depositing step creates a distinct boundary between the first deposited conductive material and the second conductive material deposited in the depositing step.  
     
     
         16 . The method according to  claim 15 , further comprising the step of applying a thermal process to the substrate after the depositing step.  
     
     
         17 . The method according to  claim 8 , wherein the depositing step enhances corrosion resistance.  
     
     
         18 . The method according to  claim 12 , wherein the depositing step enhances corrosion resistance.  
     
     
         19 . The method according to  claim 8 , wherein the depositing step enhances electromigration.  
     
     
         20 . The method according to  claim 12 , wherein the depositing step enhances electromigration.  
     
     
         21 . The method according to  claim 8  further comprising the step of chemically mechanically polishing the substantially uniform conductive surface.  
     
     
         22 . An integrated circuit manufactured including the steps of  claim 1 .  
     
     
         23 . An integrated circuit manufactured including the steps of  claim 5 .  
     
     
         24 . An integrated circuit manufactured including the steps of  claim 8 .  
     
     
         25 . An integrated circuit manufactured including the steps of  claim 21.