One or more shields for use in a sputter reactor

Abstract

A set of shields usable in a sputter reactor that is used to form a tantalum-containing layer on a substrate. The tantalum-containing layer is formed using a physical vapor deposition technique wherein a magnetic field in conjunction with an electric field function to confine material sputtered from a tantalum-containing target within a reaction zone of a deposition chamber. A lower shield includes plural perforations through it to allow processing gas to pass from gas inlets in back of the outer shield to the processing space. An inner shield fits within the outer shield and shields the perforations from the substrate. An upper shield is disposed between the inner shield and the target and may be electrically floating.

What is claimed is:  
     
         1 . A shield usable in a sputter reactor, comprising 
 an outer wall extending generally parallel to an axis and including a plurality of perforations therethrough to allow gas to reach from an outer side of said outer wall to an inner side of said outer wall;    an inner wall extending generally parallel to said axis and closer to said axis than said outer wall; and    a bottom wall connecting said inner and outer walls.    
     
     
         2 . The shield of  claim 1 , wherein said perforations are round.  
     
     
         3 . The shield of  claim 1 , wherein said outer wall extends farther along said axis than does said inner wall.  
     
     
         4 . The shield of  claim 1  which is generally symmetric about said axis.  
     
     
         5 . The shield of  claim 1  which is formed from stainless steel.  
     
     
         6 . A shield assembly including the shield of  claim 1  as a first shield and further comprising a second shield fittable within the inner wall of said first shield to cover said perforations.  
     
     
         7 . The shield assembly of  claim 6 , wherein said second shield has two generally straight portions connected through a curved portion.  
     
     
         8 . In a sputter reactor having sidewalls arranged about a central axis, a target of a material to be sputtered, and a substrate to be sputter deposited separated from said target along said central axis,  
       The improvement comprising 
 a shield fittable within said sidewalls and comprising: 
 an outer wall extending generally parallel to said central axis and including a plurality of perforations therethrough to allow gas to reach from an outer side of said outer wall to an inner side of said outer wall;  
 an inner wall extending generally parallel to said axis and closer to said axis than said outer wall; and  
 a bottom wall connecting said inner and outer walls.  
 
 
     
     
         9 . The shield of  claim 8 , wherein said perforations are round.  
     
     
         10 . The shield of  claim 8 , wherein said outer wall extends farther along said central axis than does said inner wall.  
     
     
         11 . The shield of  claim 8  which is generally symmetric about said central axis.  
     
     
         12  The shield of  claim 8  which is formed from stainless steel.  
     
     
         13 . A shield assembly including the shield of  claim 8  as a first shield and further comprising a second shield fittable within the inner wall of said first shield to cover said perforations.  
     
     
         14 . The shield assembly of  claim 13 , wherein said second shield has two generally straight portions connected through a curved portion.