Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife

Abstract

In one aspect, a method of drying a substrate includes (1) setting a gas delivery angle for an air knife used during an immersion-drying process; (2) using the air knife during immersion drying of a hydrophilic substrate; and (3) using the air knife during immersion drying of a hydrophobic substrate. The gas delivery angle is unchanged during immersion drying of both the hydrophilic substrate and hydrophobic substrate. Numerous other aspects are provided.

The invention claimed is:  
     
         1 . A method of drying a substrate, comprising: 
 raising the substrate out of a fluid bath; and    during the raising step, applying an air-knife to a meniscus formed at an interface between the substrate and a surface of the bath.    
     
     
         2 . A method of drying a substrate, comprising: 
 setting a gas delivery angle for an air knife used during an immersion-drying process;    using the air knife during immersion drying of a hydrophilic substrate; and    using the air knife during immersion drying of a hydrophobic substrate, wherein the gas delivery angle is unchanged during immersion drying of both the hydrophilic substrate and hydrophobic substrate.