US2004029753A1PendingUtilityA1

Resist stripping liquid containing fluorine compound

Priority: Jun 25, 2002Filed: Jun 24, 2003Published: Feb 12, 2004
Est. expiryJun 25, 2022(expired)· nominal 20-yr term from priority
C11D 7/10C11D 7/5013G03F 7/425C11D 7/08C11D 7/3218C11D 7/34C09D 9/00C11D 7/261C11D 7/3281C11D 7/3209C11D 7/263C11D 7/3263G03F 7/423C11D 2111/22
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Claims

Abstract

In the present invention, the concentration of dissolved oxygen in the resist stripping liquid is limited to 3 ppm or lower. Using the resist stripping liquid having such a low dissolved oxygen concentration, resist residues are removed from a substrate containing copper and/or a copper alloy without causing the corrosion of copper.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A resist stripping liquid comprising a fluorine compound, wherein the concentration of dissolved oxygen in the resist stripping liquid is 3 ppm or lower.  
     
     
         2 . The resist stripping liquid according to  claim 1 , wherein the content of the fluorine compound is 0.001 to 55% by weight of the resist stripping liquid.  
     
     
         3 . The resist stripping liquid according to  claim 1 , further comprising a solvent.  
     
     
         4 . The resist stripping liquid according to  claim 3 , wherein the solvent is at least one compound selected from the group consisting of ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, triethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, formamide, monomethylformamide, dimethylformamide, monoethylformamide, diethylformamide, acetamide, monomethylacetamide, dimethylacetamide, monoethylacetamide, diethylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone, N-methylcaprolactam, methyl alcohol, ethyl alcohol, isopropanol, ethylene glycol, propylene glycol, dimethyl sulfoxide, dimethylsulfone, diethyl sulfone, bis(2-hydroxyethyl) sulfone, tetramethylene sulfone, 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, 1,3-diisopropyl-2-imidazolidinone, γ-butyrolactone, δ-valerolactone, aminoethanol, diethanolamine, triethanolamine, isopropanolamine, 1-amino-3-propanol, diisopropanolamine, triisopropanolamine, dimethylaminoethanol, N-methylaminoethanol, diethylaminoethanol, aminoethoxyethanol, ethylenediamine, diethylenetriamine, triethylenetetramine, and tetraethylenepentamine  
     
     
         5 . The resist stripping liquid according to  claim 1 , wherein the fluorine compound is ammonium fluoride, acid ammonium fluoride or hydrofluoric acid.  
     
     
         6 . The resist stripping liquid according to  claim 1 , comprising 0.001 to 20% by weight of the fluorine compound, 10 to 99.999% by weight of a solvent and 0 to 85% by weight of water.  
     
     
         7 . A method for removing resists, which comprises a step of bringing a substrate having resist residues thereon into contact with the resist stripping liquid as defined in  claim 1 .  
     
     
         8 . The method according to  claim 7 , wherein the substrate contains copper and/or a copper alloy.

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