Production method for a thin-layer component, especially a thin-layer high pressure sensor, and corresponding thin-layer component

Abstract

Proposed is a method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, as well as a thin-layer component, where a resistive layer for forming measuring elements, in particular strain gauges ( 30 ), is deposited on an electrically non-conductive surface of a diaphragm layer ( 10, 20 ), a contact-layer system ( 41 ) for electrically contacting the measuring elements being deposited on the measuring elements in such a manner, that regions of the measuring elements ( 30 ) are situated between each region of the contact-layer system and the diaphragm layer ( 10, 20 ). This is used to provide, in particular, a high-pressure sensor, in which the capacitances of the contacts of the contact-layer system are designed to be symmetric.

What is claimed is:  
     
         1 . A method for manufacturing a thin-layer component, in particular a thin-layer, high-pressure sensor, where a resistive layer for forming measuring elements, in particular strain gauges ( 30 ), is deposited on an electrically non-conductive surface of a diaphragm layer ( 10 ,  20 ), 
 wherein a contact-layer system ( 40 ,  41 ) for electrically contacting the measuring elements is deposited on the measuring elements in such manner, that no steps, or steps which are small in comparison with the thickness of the contact layer, are covered.    
     
     
         2 . The method as recited in  claim 1 , 
 wherein the contact-layer system ( 41 ) is deposited on the measuring elements in such a manner, that a region of the measuring elements ( 30 ) is situated between each region of the contact-layer system and the diaphragm layer ( 10 ,  20 ).    
     
     
         3 . The method as recited in  claim 2 , 
 wherein the contact-layer system is deposited through the openings of a shadow mask, using a sputtering process or a vapor-deposition process, the position of the openings being selected such that deposition exclusively occurs on the resistive layer.    
     
     
         4 . The method as recited in  claim 3 , 
 whereinn the resistive layer is initially deposited over the entire surface, and, in a further step, the resistive layer is patterned photolithographically or with the aid of a laser method, so that the lateral expansion of the patterned resistive layer or the measuring elements is greater, at all locations, than that of the openings in the shadow mask subsequently used for depositing the contact-layer system.    
     
     
         5 . The method as recited in  claim 3 , 
 wherein the resistive layer is initially deposited over the entire surface, the contact-layer system is deposited onto the resistive layer in a further step, and the set-up is provided, in a further step, with a passivation layer over the entire surface;    the patterning of the resistive layer and the passivation layer subsequently being accomplished, using only one etching mask.    
     
     
         6 . The method as recited in  claim 5 , 
 wherein the etching mask is produced by depositing, exposing, and developing a photoresist layer on the passivation layer.    
     
     
         7 . The method as recited in  claim 6 , 
 wherein photosensitive BCB is used as a material for the passivation layer, so that the passivation layer is simultaneously exposed and developed with the photoresist layer.    
     
     
         8 . The method as recited in one of the preceding claims, 
 wherein nickel-chromium or nickel-chromium-silicon is used as a material for the resistive layer ( 30 ).    
     
     
         9 . The method as recited in  claim 5 , 
 wherein nickel-chromium or nickel-chromium-silicon is used as a material for the resistive layer, and a layer of BCB material is used as a passivation layer that is simultaneously used as an etching mask, without additionally depositing a photoresist layer.    
     
     
         10 . A thin-layer component, in particular a thin-layer, high-pressure sensor, where a resistive layer for forming measuring elements, in particular strain gauges ( 30 ), is deposited on an electrically non-conductive surface of a diaphragm layer ( 10 ,  20 ), wherein a contact-layer system ( 40 ,  41 ) for electrically contacting the measuring elements is deposited on the measuring elements in such manner, that no steps, or steps which are small in comparison with the thickness of the contact layer, are covered.  
     
     
         11 . The thin-layer component as recited in  claim 10 , 
 wherein the contact-layer system ( 41 ) for electrically contacting the measuring elements is deposited on the measuring elements in such a manner, that regions of the measuring elements ( 30 ) are situated between each region of the contact-layer system and the diaphragm layer ( 10 ,  20 ).