Focused ion beam deposition

Abstract

Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.

What is claimed is:  
     
         1 . A system comprising: 
 a chamber configured to house a substrate for processing;    an energy source coupled to the chamber;    a system controller configured to control the introduction of at least one metal precursor gas to a focused ion beam and to control the introduction of the focused ion beam from the energy source; and    a memory coupled to the controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the system, the computer-readable program comprising: 
 instructions for controlling the energy source and for introducing the metal precursor gas into a focused ion beam which is introduced into the chamber over the substrate in which the metal from the focused ion beam forms at least one metal layer over the substrate; and  
 controlling a coherent electromagnetic radiation source to heat the at least one layer.  
   
     
     
         2 . The system of  claim 1 , wherein the metal precursor gas is one of cobalt, metal carbonyl, molybdenum, platinum, and tungsten.  
     
     
         3 . The system of  claim 2 , wherein introducing one of cobalt, metal carbonyl, molybdenum, platinum, and tungsten into the focused ion beam in a controlled ratio at a chamber pressure in the range of 10 −5  to 10 −7  torr.  
     
     
         4 . The system of  claim 1 , wherein the focused ion beam heats a discrete area on the layer.  
     
     
         5 . The system of  claim 1 , further comprising a lens coupled to the coherent electromagnetic radiation source to focus the coherent electromagnetic radiation source to a spot size on the at least one layer.  
     
     
         6 . The system of  claim 5 , wherein said lens comprises a 5× lens of numerical aperture approximately 0.15 to focus a spot size of the coherent electromagnetic radiation source in the range of 8 microns to 10 microns in diameter.  
     
     
         7 . The system of  claim 5 , wherein the at least one metal layer formed over the substrate comprises tungsten and the spot size is approximately 10 micro-meters in width.  
     
     
         8 . The system of  claim 1 , wherein the at least one metal layer over the substrate comprises at least one metal layer line having a thickness in the range of 0.1 microns to 1 micron.  
     
     
         9 . The system of  claim 1 , wherein the chamber further comprises one of a low level vacuum, a non-reacting gas, and a reducing atmosphere.  
     
     
         10 . The system of  claim 9 , wherein one of a carbon, gallium, and an oxygen is removed from the layer.  
     
     
         11 . The system of  claim 1 , wherein the instructions for controlling the introduction of at least two metals comprises instructions involving introducing the cobalt, metal carbonyl, molybdenum, platinum, and tungsten in a controllable ratio.  
     
     
         12 . The system of  claim 1 , further comprising a plurality of inlets to introduce a plurality of metal precursor gasses, wherein each of the plurality of metal precursor gasses is introduced via a separate inlet and in a controllable ratio.