Chemical mechanical polishing solution for platinum

Abstract

A solution for platinum chemical mechanical polishing is disclosed. Further, a method for forming Pt patterns is disclosed which utilizes the disclosed Pt-CMP solution which contains an alkali aqueous solution and an oxidizer which improves the polishing rate and polishing characteristics of Pt which forms a lower electrode of a metal capacitor.

What is claimed is:  
     
         1 . A chemical mechanical polishing (CMP) solution for platinum comprising: 
 an alkali aqueous solution; and    an oxidizer.    
     
     
         2 . The solution according to  claim 1 , wherein the alkali aqueous solution comprises: 
 alkali compounds selected from the group consisting of sodium hydride, potassium hydride, tetramethyl ammoniumhydride, tetraalkyl ammonium hydride and mixtures thereof.    
     
     
         3 . The solution according to  claim 1 , wherein the concentration of alkali aqueous solution ranges from 0.01 M to 10 M.  
     
     
         4 . The solution according to  claim 1 , wherein the concentration of alkali aqueous solution ranges from 0.1 M to 5 M.  
     
     
         5 . The solution according to  claim 1 , wherein the oxidizer is H 2 O 2 , Fe(NO 3 ) 2  or mixtures thereof.  
     
     
         6 . The solution according to  claim 1 , wherein the oxidizer is present in a concentration ranging from 1 vol % to 50 vol % of the alkali aqueous solution.  
     
     
         7 . The solution according to  claim 1 , wherein the oxidizer is present in a concentration ranging from 1 vol % to 10 vol % of the alkali aqueous solution.  
     
     
         8 . The solution according to  claim 1 , wherein the pH of the solution ranges from 8 to 14.  
     
     
         9 . The solution according to  claim 1 , wherein the pH of the solution ranges from 10 to 14.  
     
     
         10 . A method for forming a platinum pattern comprising: 
 (a) forming an interlayer insulating film pattern having a contact hole on a semiconductor substrate;    (b) forming a platinum layer on the interlayer insulating film pattern; and    (c) performing a platinum CMP process on a surface of the platinum layer with the interlayer insulating film pattern as an etching barrier film using the CMP solution of  claim 1 .    
     
     
         11 . The method according to  claim 10 , further comprising: 
 performing a touch-polishing process on the surface after step (c) using a slurry for an interlayer insulating.    
     
     
         12 . The method according to  claim 10 , wherein the interlayer insulating film pattern is an oxide pattern.  
     
     
         13 . The method according to  claim 10 , wherein the platinum pattern is used as a lower electrode pattern.  
     
     
         14 . A method for forming a platinum pattern comprising: 
 (a) forming an interlayer insulating film pattern having a contact hole on a semiconductor substrate;    (b) forming a metal adhesion layer on the interlayer insulating film pattern;    (c) forming a platinum layer on the metal adhesion layer;    (d) performing a platinum CMP process on an overall surface of the platinum layer using the CMP solution of  claim 1  until the metal adhesion layer is exposed;    (e) performing a CMP process on the resultant surface using a metal slurry until the interlayer insulating film is exposed; and    (f) performing a touch-polishing process on the resultant surface using slurry for an interlayer insulating film.    
     
     
         15 . The method according to  claim 14 , wherein the metal adhesion layer is Ti or TiN.  
     
     
         16 . The method according to  claim 14 , wherein the interlayer insulating film pattern is an oxide pattern.  
     
     
         17 . The method according to  claim 14 , wherein the platinum pattern is used as a lower electrode pattern.  
     
     
         18 . A platinum (Pt) chemical mechanical polishing (CMP) solution comprising: 
 a KOH aqueous solution; and    hydrogen peroxide.    
     
     
         19 . The Pt CMP solution according to  claim 18 , wherein the concentration of KOH aqueous solution ranges from 0.01 M to 10 M, and hydrogen peroxide is present in a concentration ranging from 1 to 50 vol % of the KOH aqueous solution.  
     
     
         20 . A method for forming a for forming a platinum pattern comprising: 
 (a) forming an interlayer insulating film pattern having a contact hole on a semiconductor substrate;    (b) forming a metal adhesion layer on the interlayer insulating film pattern;    (c) forming a platinum layer on the metal adhesion layer;    (d) performing a platinum CMP process on an overall surface of the platinum layer using the CMP solution of  claim 18  until the metal adhesion layer is exposed;    (e) performing a CMP process on the resultant surface using a metal slurry until the interlayer insulating film is exposed; and    (f) performing a touch-polishing process on the resultant surface using slurry for an interlayer insulating film.