Etching substrate material, etching process and article obtained by etching

Abstract

A process of forming a high-definition pattern by etching is provided. A photosensitive resin layer is formed on a metal substrate material having a center line-average surface roughness Ra of up to 0.10 μm and a maximum surface roughness Rmax of up to 1.0 μm to form a resist pattern. Then, the photosensitive resin layer provided on the metal substrate material is exposed to light to form a resist pattern. Finally, etching is carried out to form a pattern on the metal substrate material.

What we claim is:  
     
         1 . An etching substrate material comprising a metal substrate material which is to be provided thereon a pattern by coating a photosensitive resin layer formed thereon, and exposing the photosensitive resin layer to light to form a resist pattern, followed by etching, characterized in that said etching substrate material has a center line-average surface roughness Ra of up to 0.10 μm and a maximum surface roughness Rmax of up to 1.0 μm.  
     
     
         2 . The etching substrate material according to  claim 1 , characterized in that a surface roughness of said metal substrate material has been regulated by at least one process selected from the group consisting of rolling, chemical polishing, physical polishing, and electrolytic polishing.  
     
     
         3 . The etching substrate material according to  claim 1 , characterized in that said metal substrate material is a substrate material for a shadow mask, an aperture grill or a lead frame.  
     
     
         4 . The etching substrate material according to  claim 2 , characterized in that said metal substrate material is a substrate material for a shadow mask, an aperture grill or a lead frame.  
     
     
         5 . An etching process of exposing to light a photosensitive resin layer formed on a metal substrate material to form a resist pattern thereon, and carrying out etching to form a pattern on said metal substrate material, characterized in that said photosensitive resin layer is formed on a metal substrate material having a center line-average surface roughness Ra of up to 0.10 μm and a maximum surface roughness Rmax of up to 1.0 μm to form a resist pattern, followed by etching.  
     
     
         6 . An etching process of exposing to light a photosensitive resin layer formed on a metal substrate material to form a resist pattern thereon, and carrying out etching to form a pattern on said metal substrate material, characterized in that after degreasing of said metal substrate material, said metal substrate material is surface-treated with a first etchant to regulate a center line-average surface roughness Ra and a maximum surface roughness Rmax to up to 0.10 μm and up to 1.0 μm, respectively, and a photosensitive resin layer is thereafter formed and developed on said metal substrate material to form a resist pattern thereon, followed by etching.  
     
     
         7 . The etching process according to  claim 6 , characterized in that said first etchant comprises an aqueous solution of ferric chloride having at least 50° Bh.  
     
     
         8 . The etching process according to  claim 5 , characterized in that said metal substrate material is a substrate material for a shadow mask, an aperture grill or a lead frame.  
     
     
         9 . The etching process according to  claim 6 , characterized in that said metal substrate material is a substrate material for a shadow mask, an aperture grill or a lead frame.  
     
     
         10 . The etching process according to  claim 7 , characterized in that said metal substrate material is a substrate material for a shadow mask, an aperture grill or a lead frame.  
     
     
         11 . An article obtained by exposing to light a photosensitive resin layer formed on a metal substrate material to form a resist pattern, followed by etching, characterized in that said metal substrate material has a center line-average surface roughness Ra of up to 0.10 μm and a maximum surface roughness Rmax of up to 1.0 μm.  
     
     
         12 . The article according to  claim 11 , characterized in that said article is a shadow mask or an aperture grill.