Method of forming capacitor with extremely wide band low impedance

Abstract

A method of forming a capacitor comprises: providing a first metallic thin-film layer; forming a dielectric thin-film layer of an anodized metal on a side of said first metallic layer; providing a second metallic thin-film layer on a side of the dielectric layer opposite the first metallic layer; and excising an area of the resulting structure to obtain at least one capacitor having a pair of electrode plate structures constituted by portions of said first and second metallic layers separated by a portion of said dielectric layer, and having connection points at adjacent electrode plate edges which are accessible from a same side of the capacitor and effective for operatively connecting the capacitor such that the capacitor does not exhibit an inductive resonance below a frequency of at least 1 GHz.

I claim:  
     
         1 . A method of forming a capacitor, comprising: 
 a) providing a first metallic thin-film layer;    b) forming a dielectric thin-film layer of an anodized metal on a side of said first metallic layer;    c) providing a second metallic thin-film layer on a side of the dielectric layer opposite the first metallic layer; and    d) excising an area of the resulting structure to obtain at least one capacitor having a pair of electrode plate structures constituted by portions of said first and second metallic layers separated by a portion of said dielectric layer, and having connection points at adjacent electrode plate edges which are accessible from a same side of the capacitor and effective for operatively connecting the capacitor such that the capacitor does not exhibit an inductive resonance below a frequency of at least 1 GHz.