Selective barrier removal slurry

Abstract

The invention relates to a selective barrier slurry comprising abrasive particles, a barrier removal chemical, and a pH adjusting agent useful for adjusting the pH of the composition. In particular, the inventive slurry comprises abrasive particles, a barrier removal chemical, and a component useful for adjusting the pH of the composition. The content of the abrasive particles comprise about 0.1% to about 5% of the slurry, preferably from about 1% to about 2%. The pH adjusting component can be any component that is able to adjust the pH of the slurry to the desired range. The final pH of the slurry is alkaline and is preferably in the range of about 7 to about 12, and more preferably in the range of about 9 to about 10. The slurry may also contain additives or surfactants, which can be used to increase the stability of the silica.

What is claimed is:  
     
         1 . A barrier removal slurry comprising 
 about 0.1% to about 5% abrasive particles;    barrier removal chemical; and    a pH adjusting component, 
 wherein the solution has a pH between 7 and 12.  
   
     
     
         2 . The slurry of  claim 1  wherein the abrasive particles concentration from about 1% to about 2%.  
     
     
         3 . The slurry of  claim 1  wherein the abrasive particles is selected from the group consisting of fumed silica, colloidal silica and ceria.  
     
     
         4 . The slurry of  claim 1  wherein the abrasive particles are silica particles with a diameter from about 500 nm to about 100 nm.  
     
     
         5 . The slurry of  claim 4  wherein the diameter of the silica particles is from about 50 nm to about 70 nm.  
     
     
         6 . The slurry of  claim 1  wherein the pH adjusting component is selected from the group consisting of KOH, NaOH, NH 4 OH and TMAH.  
     
     
         7 . The slurry of  claim 1  wherein the pH of the solution is in the range of about 9 to about 10.  
     
     
         8 . The slurry of  claim 7  wherein the pH of the solution is about 9.  
     
     
         9 . The slurry of  claim 1  wherein the barrier removal chemical is hydroxylamine or any derivatives therefrom.  
     
     
         10 . The slurry of  claim 9  wherein the barrier removal chemical is selected from the group consisting of hydroxylamine hydrochloride, hydroxylamine nitrate, hydroxylamine phosphate, and hydroxylamine sulfate.  
     
     
         11 . The slurry of  claim 1  wherein the concentration of the barrier removal chemical is from about 0.1 to about 2%.  
     
     
         12 . The slurry of  claim 11  wherein the concentration of the barrier removal chemical is from about 0.2% to about 0.5%.  
     
     
         13 . The slurry of  claim 1  further comprising one or more additives.  
     
     
         14 . The slurry of  claim 13  wherein the one or more additives is polyethylene glycol or any derivatives therefrom.  
     
     
         15 . The slurry of  claim 13  wherein the content of the additive is less than or equal to about 1%.  
     
     
         16 . The slurry of  claim 1  further comprising a corrosion inhibitor.  
     
     
         17 . The slurry of  claim 16  wherein the corrosion inhibitor is benzotriazole or any derivatives therefrom.  
     
     
         18 . The slurry of  claim 16  wherein the concentration of the corrosion inhibitor is in the range of about 0.001% to about 0.1%.  
     
     
         19 . A slurry comprising 
 abrasive particles concentration from about 1% to about 2%, wherein the abrasive particles are selected from the group consisting of fumed silica, colloidal silica and ceria;    hydroxylamine; a corrosion inhibitor, and    a pH adjusting component selected from the group consisting of KOH, NaOH, NH 4 OH and TMAH, 
 wherein the solution has a pH between about 9 and about 10.  
   
     
     
         20 . A method for the selective barrier removal on a wafer, the method comprising: 
 applying a slurry to the wafer on a fixed abrasive pad or a polymeric pad wherein the slurry comprises: 
 about 0.1% to about 5% abrasive particles; barrier removal chemical, and a pH adjusting component, wherein the solution has a pH between 7 and 12.  
   
     
     
         21 . A wafer processed by a method comprising the steps of  claim 20 .  
     
     
         22 . An integrated circuit manufactured by a method comprising the steps of  claim 20.