Porous low-dielectric constant materials for use in electronic devices

Abstract

A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.

1 . A dielectric material comprised of a porous polymeric material having closed cell pores less than about 200 Å in diameter, a void percentage in the range of approximately 5% to 35%, and a dielectric constant of less than 2.4, wherein the polymeric material comprises a host polymer that has a pre-process molecular weight in the range of approximately 750 to 100,000 and a glass transition temperature of at least about 400° C.  
     
     
         2 . The dielectric material of  claim 1 , wherein the host polymer is an organic thermosetting polymer.  
     
     
         3 . The dielectric material of  claim 1 , wherein the host polymer is a crosslinked polymer.  
     
     
         4 . The dielectric material of  claim 1 , wherein the host polymer is silicon-containing.  
     
     
         5 . The dielectric material of  claim 4 , wherein the host polymer is selected from the group consisting of silsesquioxanes, alkoxysilanes, organic silicates, orthosilicates, and combinations thereof.  
     
     
         6 . The dielectric material of  claim 5 , wherein the host polymer is a silsesquioxane, and derivatives and combinations thereof.  
     
     
         7 . The dielectric material of  claim 6 , wherein the silsesquioxane is selected from the group consisting of hydrogen silsesquioxanes, alkyl silsesquioxanes, aryl silsesquioxanes, and derivatives and combinations thereof.  
     
     
         8 . The dielectric material of  claim 7 , wherein the host polymer is selected from the group consisting of hydrogen silsesquioxanes, lower alkyl silsesquioxanes and phenyl silsesquioxanes.  
     
     
         9 . The dielectric material of  claim 1 , wherein the host polymer is a copolymer of a polyimide and a silsesquioxane.  
     
     
         10 . The dielectric material of  claim 1 , wherein the host polymer is a polyimide.  
     
     
         11 . The dielectric material of  claim 1 , wherein the host polymer is a polybenzocyclobutene.  
     
     
         12 . The dielectric material of  claim 1 , wherein the host polymer is a poly(arylene).  
     
     
         13 . The dielectric material of  claim 1 , wherein the host polymer is a poly(arylene ether).