Method and composition for chemical polishing

Abstract

A method of polishing a surface such as a surface of a material layer on a substrate is provided. In one embodiment, a substrate having a material layer thereon is provided. The material layer has a surface with a plurality of features having a feature size less than about 1 micron. The surface is contacted with a polishing composition that comprises a compound capable of reacting with the material layer. Relative motion is provided between the polishing composition and the surface to be polished, and portions of the material layer are removed, thereby reducing the feature size of the features on the surface of the material layer. The surface is irradiated with sonic energy. The polishing composition may comprise ozone. In another aspect of the invention, a polishing composition comprising about 1 part per million (ppm) to about 50 ppm of ozone and a sufficient concentration of acid to solubilize the ozone is provided.

1 . A method of polishing, comprising: 
 irradiating a surface of a material to be polished with sonic energy; and    contacting the surface with a polishing composition.    
     
     
         2 . The method of  claim 1  wherein the contacting of the surface with the polishing composition is performed during the irradiation of the surface.  
     
     
         3 . A method of polishing, comprising: 
 contacting a surface of a material layer formed on a substrate with a polishing composition, wherein the polishing composition comprises a reactant capable of reacting with the material layer, and wherein the surface of the material layer has a plurality of features having a feature size less than about 1 micron;    providing relative motion between the polishing composition and the surface; and    removing portions of the material layer to reduce the feature size of the features, while irradiating the surface with sonic energy.    
     
     
         4 . A method of polishing, comprising: 
 contacting a surface of a material layer formed on a substrate with a polishing composition comprising ozone; and    polishing the material layer.    
     
     
         5 . The method of  claim 4  further comprising providing relative motion between the polishing composition and the surface.  
     
     
         6 . A method of polishing, comprising: 
 contacting a surface of a material layer with a polishing composition comprising an oxidizing agent; and    providing relative motion between the polishing composition and the surface, while irradiating the surface with sonic energy.    
     
     
         7 . The method of  claim 6  wherein the sonic energy has a frequency in a range of about 400 kilohertz (kHz) to about 9 megahertz (9 MHz).  
     
     
         8 . The method of  claim 6  wherein the oxidizing agent is selected from the group consisting of ozone, oxygen, and combinations thereof.  
     
     
         9 . A method of polishing, comprising: 
 retaining a substrate having a material layer thereon in a face-up orientation, wherein the material layer has a surface to be polished;    projecting a polishing composition downward onto the surface to be polished;    providing relative motion between the polishing composition and the surface to be polished; and    irradiating the surface with sonic energy.    
     
     
         10 . The method of  claim 9  wherein the polishing composition is projected onto surface to be polished at a rate sufficient to form a continuous film of polishing composition on the surface of the material layer.  
     
     
         11 . A polishing composition, comprising: 
 about 1 part per million (ppm) to about 50 ppm ozone; and    a sufficient concentration of acid to solubilize the ozone.    
     
     
         12 . The polishing composition of  claim 11  wherein the concentration of acid is in a range of about 5% by weight to about 100% by weight.