Method for improving reliability of reaction apparatus

Abstract

Disclosed is a method for improving the reliability of an etching apparatus and a deposition apparatus. The method comprises the steps of preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas, and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction unit of the apparatus, whereby a chlorine series residual absorbed on the reaction tube is effectively removed by use of hydrogen and nitrogen-based plasmas thus to stably secure the reliability of the apparatus.

What is claimed is:  
     
         1 . A method for improving reliability of an etching apparatus and a deposition apparatuses, the method comprising the steps of: 
 preparing a reaction unit using chlorine series gas; and    generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit.    
     
     
         2 . The method as claimed in  claim 1 , wherein the plasma including hydrogen comprises argon of 5 to 90%.  
     
     
         3 . The method as claimed in  claim 1 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50%.  
     
     
         4 . The method as claimed in  claim 1 , wherein the plasma including nitrogen comprises argon of 5 to 90%.  
     
     
         5 . The method as claimed in  claim 1 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50% and argon of 5 to 90%.  
     
     
         6 . A method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of: 
 preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and    generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the apparatus.    
     
     
         7 . The method as claimed in  claim 6 , wherein the plasma including hydrogen comprises argon of 5 to 90%.  
     
     
         8 . The method as claimed in  claim 6 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50%.  
     
     
         9 . The method as claimed in  claim 6 , wherein the plasma including nitrogen comprises argon of 5 to 90%.  
     
     
         10 . The method as claimed in  claim 6 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50% and argon of 5 to 90%.