Polishing apparatus, polishing method and method of manufacturing semiconductor device

Abstract

There is disclosed a polishing method which comprises positioning a treating substrate held by a substrate holder over a turntable so as to enable the treating substrate to press-contact with a polishing region of a polishing surface of the turntable, the polishing surface having the polishing region where the treating substrate moves relative thereto, and a non-polishing region surrounded by the polishing region, introducing a first liquid and a second liquid into a slurry mixing section disposed at the non-polishing region of the polishing surface, at least one of the first and second liquids containing an abrasive component, and applying a mixed slurry comprising the first and second liquids which have been mixed together in advance in the slurry mixing section to the polishing surface while rotating the turntable to enable the treating substrate to move relative to the polishing region, thereby polishing the treating substrate.

What is claimed is:  
     
         1 . A polishing apparatus comprising: 
 a turntable having a polishing region where a treating substrate moves relative thereto, and a non-polishing region surrounded by said polishing region;    a substrate holder holding said substrate, thereby enabling said substrate to press-contact with a polishing surface located within said polishing region;    a first supply pipe feeding a first liquid;    a second supply pipe feeding a second liquid; and    a slurry mixing vessel disposed above said turntable within said non-polishing region and away from the tip ends of said first supply pipe and said second supply pipe, said slurry mixing vessel storing and mixing said first and second liquids to obtain a mixed slurry and to feed said mixed slurry onto said polishing surface.    
     
     
         2 . The polishing apparatus according to  claim 1 , wherein said slurry mixing vessel is secured to said turntable through a polishing cloth adhered to said turntable.  
     
     
         3 . A polishing method comprising: 
 positioning a treating substrate held by a substrate holder over a turntable so as to enable said treating substrate to press-contact with a polishing region of a polishing surface of said turntable, said polishing surface having said polishing region where said treating substrate moves relative thereto, and a non-polishing region surrounded by said polishing region;    introducing a first liquid and a second liquid into a slurry mixing section disposed at said non-polishing region of said polishing surface, at least one of said first and second liquids containing an abrasive component; and    applying a mixed slurry comprising said first and second liquids which have been mixed together in advance in said slurry mixing section to said polishing surface while rotating said turntable to enable said treating substrate to move relative to said polishing region, thereby polishing said treating substrate.    
     
     
         4 . The polishing method according to  claim 3 , wherein said mixed slurry comprising a mixture of said first and second liquids overflows from said slurry mixing section, thereby feeding said mixed slurry onto said polishing surface.  
     
     
         5 . The polishing method according to  claim 3 , wherein said slurry mixing section is a slurry mixing vessel fixed in place to a polishing cloth adhered to said turntable.  
     
     
         6 . The polishing method according to  claim 3 , wherein said slurry mixing section is a recessed portion formed in a polishing cloth adhered to said turntable.  
     
     
         7 . The polishing method according to  claim 3 , wherein said first liquid comprises abrasive grains and water; while said second liquid comprises an oxidizing agent and water.  
     
     
         8 . The polishing method according to  claim 3 , wherein said first liquid comprises abrasive grains and water; while said second liquid is water diluting said first liquid.  
     
     
         9 . The polishing method according to  claim 3 , wherein said first liquid and said second liquid are a combination of two liquids selected from the group consisting of an abrasive grain-containing dispersion liquid, a solution of an oxidizing agent, and a solution of a catalyst.  
     
     
         10 . The polishing method according to  claim 3 , wherein said first liquid comprises abrasive grains and water; while said second liquid comprises a surfactant and water.  
     
     
         11 . A method for manufacturing a semiconductor device comprising: 
 forming an insulating film above a surface of a semiconductor substrate;    forming a recessed portion in said insulating film;    depositing a conductive material in said recessed portion as well as above said insulating film, to form a conductive layer; and    removing the portion of said conductive material that has been deposited above said insulating film outside said recessed portion to leave said conductive material in said recessed portion;    wherein at least part of said conductive material deposited above said insulating film is removed by: 
 positioning said semiconductor substrate held by a substrate holder over a turntable so as to enable said semiconductor substrate to press-contact with a polishing region of a polishing surface of said turntable, said polishing surface having said polishing region where said semiconductor substrate moves relative thereto, and a non-polishing region surrounded by said polishing region;  
 introducing a first liquid and a second liquid into a slurry mixing section disposed at said non-polishing region of said polishing surface, at least one of said first and second liquids containing an abrasive component; and  
 applying a mixed slurry comprising said first and second liquids which has been mixed together in advance in said slurry mixing section to said polishing surface while rotating said turntable to enable said semiconductor substrate to move relative to said polishing region, thereby polishing said conductive material.  
   
     
     
         12 . The method according to  claim 11 , wherein said mixed slurry comprising a mixture of said first and second liquids overflows from said slurry mixing section, thereby feeding said mixed slurry onto said polishing surface.  
     
     
         13 . The method according to  claim 11 , wherein said slurry mixing section is a slurry mixing vessel fixed in place to a polishing cloth adhered to said turntable.  
     
     
         14 . The method according to  claim 11 , wherein said slurry mixing section is a recessed portion formed in a polishing cloth adhered to said turntable.  
     
     
         15 . The method according to  claim 11 , wherein said conductive material comprises a Cu layer disposed through a liner layer.  
     
     
         16 . The method according to  claim 15 , wherein said first liquid comprises abrasive grains and water; while said second liquid comprises an oxidizing agent and water.  
     
     
         17 . The method according to  claim 11 , wherein said conductive material comprises W.  
     
     
         18 . The method according to  claim 17 , wherein said first liquid and said second liquid are a combination of two liquids selected from the group consisting of an abrasive grain-containing dispersion liquid, a solution of an oxidizing agent, and a solution of a catalyst.  
     
     
         19 . The method according to  claim 11 , wherein said conductive material comprises Ru or a Ru compound.  
     
     
         20 . The method according to  claim 19 , wherein said first liquid is an aqueous solution containing a high concentration of a cerium compound (IV); while said second liquid is water for diluting said aqueous solution.