Semiconductor device and method of manufacturing the same

Abstract

Two semiconductor substrates are first bonded together by means of a metal bump, while respective one-side surfaces on which device patterns are formed are faced each other, and a resin is then filled into a gap between the respective one-side surfaces and thereafter each of the semiconductor substrates is polished and thinned to a prescribed thickness. Furthermore, a via hole and an insulating film are formed; part of a portion in contact with the metal bump, of the insulating film, is opened; the inside of the via hole is filled with a conductor; and an electrode pad is formed on the conductor, to thereby form structures. Finally, a required number of structures are electrically connected with each other through the electrode pad and stacked to thereby obtain a semiconductor device.

What is claimed is:  
     
         1 . A method manufacturing a semiconductor device, comprising the steps of: 
 bonding, by means of a metal bump, two semiconductor substrates, on respective one-side surfaces of which a conductor layer patterned to a required shape is formed, while facing said respective one-side surfaces, each other;    filling, with an insulating resin, a gap between the respective conductor layers bonded by means of the metal bump;    polishing each of exposed side surfaces of said semiconductor substrates to thereby thin each of the semiconductor substrates to a prescribed thickness;    forming a via hole which reaches the metal bump, in a required place of each of said thinned semiconductor substrates;    forming an insulating film on the surface of each of said semiconductor substrates including an inner surface of said formed via hole;    opening at least part of a portion in contact with said metal bump, of the insulating film formed within said via hole;    filling an inside of said via hole with a conductor and further forming, on said insulating film, an electrode pad patterned to a required shape and electrically connected to the conductor; and    stacking a structure obtained by the above-described steps, by a required number, by electrically connecting respective structures with each other through said electrode pad.    
     
     
         2 . The method according to  claim 1 , further comprising, after the step of stacking the required number of structures, the step of bonding a metal bump as an external connection terminal to the electrode pad formed on an exposed side surface of the lowest-positioned structure.  
     
     
         3 . The method according to  claim 1 , wherein in the step of stacking the required number of structures, respective electrode pads facing each other, of an upper-positioned structure and a lower-positioned structure, are bonded by means of a metal bump.  
     
     
         4 . The method according to  claim 3 , wherein after the step of stacking the required number of structures, an insulating resin is filled into gaps between the stacked structures.  
     
     
         5 . The method according to  claim 1 , wherein conductor layers to be formed on the respective one-side surfaces of said two semiconductor substrates are patterned so as to mutually exhibit the same shape when arranged to be faced each other during bonding.  
     
     
         6 . The method according to  claim 1 , wherein in the step of thinning each of said semiconductor substrates to a prescribed thickness, the prescribed thickness is selected in the range of 3 μm to 20 μm.  
     
     
         7 . A method of manufacturing a semiconductor device, comprising the steps of: 
 bonding, by means of a metal bump, two semiconductor substrates, on respective one-side surfaces of which a conductor layer patterned to a required shape is formed, while facing said respective one-side surfaces, each other;    filling, with an insulating resin, a gap between the respective conductor layers bonded by means of the metal bump;    polishing each of exposed side surfaces of said semiconductor substrates to thereby thin only one of the semiconductor substrates to a prescribed thickness;    forming a via hole which reaches the metal bump, in a required place of said thinned semiconductor substrate;    forming an insulating film on the surface of each of said semiconductor substrates including an inner surface of said formed via hole;    opening at least part of a portion in contact with said metal bump, of the insulating film formed within said via hole; and    filling an inside of said via hole with a conductor and further forming, on the insulating film on said thinned semiconductor substrate, an electrode pad patterned to a required shape and electrically connected to the conductor.    
     
     
         8 . The method according to  claim 7 , further comprising, after the step of forming the electrode pad, the step of bonding a metal bump as an external connection terminal to the electrode pad.  
     
     
         9 . A semiconductor device manufactured by the method of manufacturing a semiconductor device according to  claim 2 .  
     
     
         10 . A semiconductor device manufactured by the method of manufacturing a semiconductor device according to  claim 8.