US2003231273A1PendingUtilityA1
Current-driven light-emitting display apparatus and method of producing the same
Est. expiryFeb 17, 2017(expired)· nominal 20-yr term from priority
H10K 59/131H05B 44/00G09G 3/3225H10D 86/481H10D 86/60G09G 3/30H10K 2102/3026H10K 50/81H10K 59/123H10K 59/12H10K 50/828G09G 2300/0876G09G 2300/0439G09G 3/3291G09G 3/3233G09G 2300/0819Y02B20/30G09G 2300/0417G09G 2300/0866G09G 3/3266G09G 2310/06G09G 2320/043G09G 2300/0842
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Claims
Abstract
A method for producing an organic EL display device is disclosed. The display device comprises a substrate, a transistor disposed on the substrate, a flattened inter-layer insulation film covering the transistor, a pixel electrode, and an organic EL layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for producing a display, the steps comprising:
forming a transistor on a substrate; forming and flattening an inter-layer insulation film over the transistor, forming a contact hole in the inter-layer insulation film; forming a pixel electrode on the inter-layer insulation film; and forming an organic EL layer in a pixel region corresponding to the pixel electrode, the transistor being connected to the pixel electrode through the contact hole.
2 . A method for producing a display, the steps comprising:
forming a transistor on a substrate; forming a first inter-layer insulation film over the transistor; forming and flattening a second inter-layer insulation film over the first inter-layer insulation film; forming a pixel electrode on the flattened second inter-layer insulation film; forming an organic EL layer in a pixel region corresponding to the pixel electrode; and forming a contact hole in the first inter-layer insulation film and the second inter-layer insulation film, the transistor being connected to the pixel electrode through the contact hole.
3 . A method for producing a display, the steps comprising:
forming a transistor on a substrate; forming a first inter-layer insulation film over the transistor; forming a first contact hole in the first inter-layer insulation film, the transistor being connected to an electrode layer through the first contact hole; forming and flattening a second inter-layer insulation film over the first inter-layer insulation film and the electrode layer; forming a pixel electrode on the second inter-layer insulation film after the flattening process of the second inter-layer insulation film; forming an organic EL layer in a pixel region corresponding to the pixel electrode; and forming a second contact hole in the second inter-layer insulation film, the transistor being connected to the pixel electrode through the second contact hole.
4 . The method according to claim 1 , further comprising forming a bank layer for defining the pixel region.
5 . The method according to claim 1 , the forming of the organic EL layer being performed by an ink-jet method.
6 . A display, comprising:
a substrate; a transistor disposed on the substrate; a flattened inter-layer insulation film covering the transistor; a pixel electrode formed on the flattened inter-layer insulation film; and an organic EL layer disposed between the pixel electrode and a counter electrode.
7 . The display according to claim 6 , further comprising a contact hole, the transistor being connected to the pixel electrode through the contact hole.
8 . The display according to claim 6 , the organic EL layer being surrounded by a bank layer.
9 . The display according to claim 8 , the bank layer being formed on the inter-layer insulation film.Join the waitlist — get patent alerts
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