Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system

Abstract

Embodiments of the invention provide a tandem magnetically enhanced etch chamber. The tandem chamber generally includes a first tandem processing chamber, a second tandem processing chamber positioned adjacent the first tandem processing chamber and being partially separated therefrom by a shared central wall, and a pumping apparatus cooperatively in fluid communication with the first and second chambers. The first tandem processing chamber generally includes a first substrate support member positioned in a first chamber, a first plasma generation device in communication with the first chamber, and a plurality of first selectively actuated electromagnets positioned around the first chamber. The second tandem processing chamber generally includes a second substrate support member positioned in a second chamber, a second plasma generation device in communication with the second chamber, and a plurality of second selectively actuated electromagnets positioned around the second chamber.

1 . A tandem magnetically enhanced etching chamber, comprising: 
 a first tandem processing chamber defining a first processing region, comprising: 
 a first substrate support member positioned in a first chamber;  
 a first plasma generation device in communication with the first chamber; and  
 a plurality of first selectively actuated electromagnets positioned around the first chamber;  
   a second tandem processing chamber positioned adjacent the first tandem processing chamber, the second tandem processing chamber defining a second processing region that is partially isolated therefrom by a shared central wall, the second tandem processing chamber comprising: 
 a second substrate support member positioned in a second chamber;  
 a second plasma generation device in communication with the second chamber; and  
 a plurality of second selectively actuated electromagnets positioned around the second chamber;  
   a pumping apparatus cooperatively in fluid communication with the first and second chambers; and    a magnetic shield member positioned between the first tandem processing chamber and the second tandem processing chamber.    
     
     
         2 . The tandem chamber of  claim 1 , further comprising a system controller in electrical communication with the plurality of first selectively actuated electromagnets and the plurality of second selectively actuated electromagnets, the system controller being configured to control the magnitude and duration of the magnetic field generated by each of the plurality of first selectively actuated electromagnets and the plurality of second selectively actuated electromagnets.  
     
     
         3 . The tandem chamber of  claim 1 , wherein the first and second plurality of selectively actuated electromagnets each comprise four electromagnets equally positioned around the respective tandem processing chamber.  
     
     
         4 . The tandem chamber of  claim 1 , wherein the shared central wall separates an upper portion of the respective first and second tandem processing chambers, while allowing a lower portion of the respective first and second tandem processing chamber to be in fluid communication with each other.  
     
     
         5 . The tandem chamber of  claim 1 , wherein the first and second plasma generation devices comprise a torroidal plasma conduit assembly.  
     
     
         6 . The tandem chamber of  claim 5 , wherein the torroidal plasma conduit assembly comprises: 
 at least one torroidal plasma conduit in fluid communication with opposing sides of a processing region;    at least one coil positioned proximate the at least one torroidal plasma conduit; and    a power supply in electrical communication with the at least one coil.    
     
     
         7 . The tandem chamber of  claim 6 , wherein the at least one torroidal plasma conduit comprises a first and second torroidal plasma conduits, each of the first and second torroidal plasma conduits having terminating ends that are in communication with opposing sides of the processing region.  
     
     
         8 . The tandem chamber of  claim 6 , wherein the power supply comprises an RF power supply and the at least one coil comprises an individual coil wound around each of the at least one torroidal plasma conduits.  
     
     
         9 . The tandem chamber of  claim 1 , further comprising at least one power supply in electrical communication with the first and second substrate support members.  
     
     
         10 . The tandem chamber of  claim 1 , further comprising a magnetic shield member positioned between the first and second tandem processing regions, the magnetic shield member being configured to magnetically isolate a first processing region in the first tandem processing chamber from a second processing region in the second tandem processing chamber.  
     
     
         11 . An etch processing system, comprising: 
 a loadlock chamber;    a substrate transfer chamber selectively in communication with the loadlock chamber; and    at least one tandem etch processing chamber selectively in communication with the substrate transfer chamber, the tandem etch chamber comprising: 
 a first and second adjacently positioned processing chambers;  
 a plurality of electromagnets positioned around the first and second processing regions; and  
 at least one torroidal conduit in communication with each of the first and second adjacently positioned processing chambers,  
 wherein the first and second adjacently positioned processing chambers share a common wall that magnetically separates the respective processing chambers while allowing fluid communication therebetween.  
   
     
     
         12 . The etch processing system of  claim 11 , wherein the first and second adjacently positioned processing chambers each comprise a selectively actuated substrate support member configured to move between a processing position and a loading position, wherein the loading position corresponds to a position in a lower portion of the respective chamber adjacent an aperture configured to communicate substrates into and out of the chamber, and wherein the processing position corresponds to a position in an upper portion of the respective chamber adjacent the plurality of electromagnets.  
     
     
         13 . The etch processing system of  claim 11 , wherein the plurality of electromagnets are positioned around an upper portion of the first and second adjacently positioned processing chambers.  
     
     
         14 . The etch processing system of  claim 13 , wherein a lower portion of the first and second adjacently positioned processing chambers includes a selectively actuated valve configured to communicate substrates therethrough into the lower portion of the first and second adjacently positioned processing chambers.  
     
     
         15 . The etch processing system of  claim 11 , wherein the plurality of electromagnets comprise a plurality of individually controlled electromagnets, each of the plurality of individually controlled electromagnets being in electrical communication with a system controller configured to control the magnitude and duration of the magnetic field generated by each of the plurality of individually controlled electromagnets.  
     
     
         16 . The etch processing system of  claim 11 , wherein the substrate transfer chamber includes a substrate handler positioned therein, the substrate handler being configured to transfer substrates two at a time between the at least one tandem etch processing chamber and the loadlock chamber.  
     
     
         17 . The etch processing system of  claim 11 , wherein the at least one torroidal conduit comprises: 
 a first torroidal conduit having a first and second terminating ends, the first terminating end being in communication with a first aperture in communication with a processing region at a first location, the second terminating end being in communication with a second aperture in communication with the processing region at a second location, the second location being positioned opposite the first location;    a second torroidal conduit having a third and fourth terminating ends, the third terminating end being in communication with a third aperture in communication with a processing region at a third location, the fourth terminating end being in communication with a fourth aperture in communication with the processing region at a fourth location, the third location being positioned opposite the fourth location and equidistant between the first and second locations; and    a coil assembly positioned proximate the first and second conduits, the coil assembly being configured to generate a field in the first and second conduits sufficient to ignite a plasma therein.    
     
     
         18 . The etch processing system of  claim 17 , wherein the coil assembly comprises a first coil wrapped around the first torroidal conduit and a second coil wrapped around the second torroidal conduit, the first and second coils being in electrical communication with at least one power supply.  
     
     
         19 . The etch processing system of  claim 11 , wherein the at least one torroidal conduit includes a gas inlet configured to supply a process gas to the at least one torroidal conduit.  
     
     
         20 . The etch processing system of  claim 11 , wherein the at least one torroidal conduit comprises at least 3 torroidal conduits in communication with each of the first and second adjacently positioned processing chambers, each of the at least 3 torroidal conduits having terminating ends in fluid communication with the processing chambers on opposing sides, the terminating ends being equally spaced radially around a perimeter of the processing chambers.  
     
     
         21 . A tandem processing chamber, comprising: 
 a first processing chamber, comprising: 
 a first substrate support member configured to receive a substrate in a lower portion of the first processing chamber and communicate the substrate to an upper portion of the first processing chamber for processing;  
 a first plurality of electronically controlled electromagnets positioned around a perimeter of the upper portion of the first processing chamber;  
 at least one first torroidal plasma conduit in fluid communication with the upper portion of the first processing chamber; and  
 at least one first coil positioned proximate the at least one first torroidal plasma conduit and being configured to generate a field within the at least one first torroidal plasma conduit;  
   a second processing chamber positioned adjacent the first processing chamber and sharing a common wall therewith, the second processing chamber comprising: 
 a second substrate support member configured to receive a substrate in a lower portion of the second processing chamber and communicate the substrate to an upper portion of the second processing chamber for processing;  
 a second plurality of electronically controlled electromagnets positioned around a perimeter of the upper portion of the second processing chamber;  
 at least one second torroidal plasma conduit in fluid communication with the upper portion of the second processing chamber; and  
 at least one second coil positioned proximate the at least one second torroidal plasma conduit and being configured to generate a field within the at least one second torroidal plasma conduit;  
   at least one power supply in electrical communication with the at least one first coil and the at least second first coil; and    a system controller in electrical communication with the power supply, the system controller being configured to regulate the electrical power delivered to the at least one first coil and the at least one second coil.    
     
     
         22 . The tandem processing chamber of  claim 21 , wherein the common wall is configured to magnetically isolate a first processing region in the first processing chamber from a second processing region in the second processing chamber, while allowing fluid communication between the respective processing regions.  
     
     
         23 . The tandem processing chamber of  claim 21 , wherein the system controller comprises a microprocessor-type controller configured to generate control signals for the tandem processing chamber in accordance with a semiconductor processing recipe.  
     
     
         24 . The tandem processing chamber of  claim 21 , wherein the at least one first and second torroidal plasma conduits each comprise a pair of torroidal conduits in fluid communication at terminating ends with the respective processing regions.  
     
     
         25 . The tandem processing chamber of  claim 24 , wherein the terminating ends are equally spaced radially around the perimeter of the upper portion of the first and second processing chambers.  
     
     
         26 . The tandem processing chamber of  claim 21 , wherein the first and second plurality of electronically controlled electromagnets are configured to generate a time varying magnetic field in the first and second processing chambers in cooperation with the system controller.  
     
     
         27 . The tandem processing chamber of  claim 21 , wherein the at least one power supply comprises an RF power supply.  
     
     
         28 . The tandem processing chamber of  claim 21 , wherein the first and second plurality of electronically controlled electromagnets each comprise 4 arc shaped electromagnets configured to be positioned around a perimeter of a processing chamber.  
     
     
         29 . The tandem processing chamber of  claim 21 , wherein first terminating ends of the at least one first torroidal plasma conduit are in communication with a first processing region through a sidewall portion of the tandem processing chamber, and wherein second terminating ends of the at least one second torroidal plasma conduit are in communication with a second processing region through a sidewall portion of the tandem processing chamber.  
     
     
         30 . The tandem processing chamber of  claim 21 , wherein first terminating ends of the at least one first torroidal plasma conduit are in communication with a first processing region through a top portion of the tandem processing chamber, and wherein second terminating ends of the at least one second torroidal plasma conduit are in communication with a second processing region through a top portion of the tandem processing chamber.  
     
     
         31 . The tandem processing chamber of  claim 21 , wherein the at least one first and second torroidal plasma conduits each include a process gas inlet configured to supply a process gas to an interior portion of the at least one first and second torroidal plasma conduits.  
     
     
         32 . The tandem processing chamber of  claim 21 , further comprising a centrally located pumping aperture in communication with a vacuum pump, the centrally located pumping aperture being configured to simultaneously pump both the first and second processing chambers to an equal pressure.