US2003227073A1PendingUtilityA1

Lead frame and manufacturing method thereof and a semiconductor device

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Assignee: FUJITSU LTDPriority: Jun 7, 2002Filed: Jan 6, 2003Published: Dec 11, 2003
Est. expiryJun 7, 2022(expired)· nominal 20-yr term from priority
Inventors:Takahiro Yurino
H10W 90/756H10W 90/736H10W 74/00H10W 72/5449H10W 72/5363H10W 72/952H10W 72/951H10W 72/884H10W 72/551H10W 72/536H10W 72/075H10W 70/458H10W 74/127H10W 72/071
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Claims

Abstract

In a semiconductor device, a lead frame made of a copper alloy prevents exfoliation occurring near the surface of the lead frame. A copper oxide layer is formed on the base material made of a copper alloy by immersing the base material into a solution of a strong oxidizer. The copper oxide layer serves as an outermost layer and consists of a copper oxide other than a copper oxide in the form of needle crystals.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A lead frame comprising: 
 a base material made of a copper alloy; and    a copper oxide layer formed by contacting the lead frame with a solution of a strong oxidizer, the copper oxide layer serving as an outermost layer and consisting of a copper oxide other than a copper oxide in the form of needle crystals.    
     
     
         2 . The lead frame as claimed in  claim 1 , wherein a thickness of the copper oxide layer is 10 to 1000 Angstroms.  
     
     
         3 . A manufacturing method of a lead frame, comprising: 
 configuring a base material made of a copper alloy into a predetermined pattern;    applying plating to a part of the base material; and    forming a copper oxide layer as an outermost layer on a surface of the base material by immersing the base material into a solution of a strong oxidizer, the copper oxide layer consisting of a copper oxide other than a copper oxide in the form of needle crystals.    
     
     
         4 . The manufacturing method as claimed in  claim 3 , wherein a time period for immersing the base material into the solution of the strong oxidizer is adjusted so as to take the base material out of the solution of the strong oxidizer before the copper oxide changes to a needle crystal state.  
     
     
         5 . A semiconductor device comprising: 
 a lead frame having a copper oxide layer formed on a base material made of a copper alloy, the copper oxide layer formed by contacting the lead frame with a solution of a strong oxidizer and serving as an outermost layer, the copper oxide layer consisting of a copper oxide other than a copper oxide in the form of needle crystals;    a semiconductor element mounted on a predetermined portion of the lead frame; and    a seal resin encapsulating the semiconductor device.    
     
     
         6 . The semiconductor device as claimed in  claim 5 , wherein a thickness of the copper oxide layer is 10 to 1000 Angstroms.

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