Process for forming semiconductor layer of micro-and nano-electronic devices

Abstract

A process comprising: creating a dispersion including: (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material; and solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.

We claim:  
     
         1 . A process comprising: 
 creating a dispersion including: (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material; and    solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.    
     
     
         2 . The process of  claim 1 , wherein the continuous phase further includes a dispersing agent at least substantially dissolved in the solvent.  
     
     
         3 . The process of  claim 1 , further comprising reducing the particle size of the semiconductor material prior to the solution coating.  
     
     
         4 . The process of  claim 1 , wherein the semiconductor material in the semiconductor layer has a particle size ranging from about 10 nm to about 1,000 nm.  
     
     
         5 . The process of  claim 1 , further comprising heating the semiconductor layer.  
     
     
         6 . The process of  claim 1 , wherein the organic semiconductor material is a n-type material.  
     
     
         7 . The process of  claim 1 , wherein the organic semiconductor material is a p-type material.  
     
     
         8 . The process of  claim 1 , wherein the solvent is cyclohexanone, the organic semiconductor material is dibromoanthanthrone, and the resin binder is polyvinylbutyral.  
     
     
         9 . The process of  claim 1 , wherein the semiconductor material is present in the semiconductor layer in an amount ranging from about 20% to about 99.5% by weight based on the total weight of the semiconductor material and the binder resin.  
     
     
         10 . The process of  claim 1 , wherein the solution coating is accomplished by spin coating.  
     
     
         11 . The process of  claim 1 , wherein the solution coating is accomplished by inkjet printing.  
     
     
         12 . A process for fabricating a field effect transistor comprising: 
 forming an insulating layer, a gate electrode, a semiconductor layer, a source electrode, and a drain electrode,    wherein the forming the semiconductor layer is accomplished by solution coating using a dispersion including (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material, to form the semiconductor layer including the organic semiconductor material and the resin binder,    wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are formed in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.    
     
     
         13 . The process of  claim 12 , wherein the organic semiconductor material is a n-type material.  
     
     
         14 . The process of  claim 12 , wherein the solvent is cyclohexanone, the organic semiconductor material is dibromoanthanthrone, and the resin binder is polyvinylbutyral.  
     
     
         15 . A field effect transistor comprising: 
 an insulating layer;    a gate electrode;    a semiconductor layer including an organic semiconductor material and a resin binder;    a source electrode; and    a drain electrode,    wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.    
     
     
         16 . The field effect transistor of  claim 15 , wherein the semiconductor layer further comprises a dispersing agent.  
     
     
         17 . The field effect transistor of  claim 15 , wherein the semiconductor material in the semiconductor layer has a particle size ranging from about 10 nm to about 1,000 nm.  
     
     
         18 . The field effect transistor of  claim 15 , wherein the organic semiconductor material is a n-type material.  
     
     
         19 . The field effect transistor of  claim 15 , wherein the organic semiconductor material is dibromoanthanthrone and the resin binder is polyvinylbutyral.