Method of forming twin-spacer gate FLASH device and the structure of the same

Abstract

The structure of the FLASH device includes a first dielectric layer formed on a substrate. A floating gate with spacer profile formed on the first dielectric layer. A dielectric spacer is formed on the floating gate for isolation. A second dielectric layer is formed along the approximately vertical surface of the floating gate and the dielectric spacer and a lateral portion of the second dielectric layer laterally extends over the substrate adjacent the floating gate. A control gate is formed on the lateral portion of the second dielectric layer that laterally extends over the substrate. The control gate is formed on the lateral portion of the second dielectric layer.

What is claimed is:  
     
         1 . A method for forming a FLASH device comprising: 
 forming a pad oxide layer on a substrate;    forming a first dielectric layer on said pad oxide layer;    patterning said first dielectric layer;    forming a first conductive layer over said patterned first dielectric layer;    etching said first conductive layer to form conductive spacer on sidewalls of said patterned first dielectric layer to act as a floating gate;    forming a dielectric spacer over said floating gate;    performing an ion implantation to form a first doped region in said substrate using said dielectric spacer as a masking;    forming a second dielectric layer on said first dielectric layer and said dielectric spacer;    etching said second dielectric layer to remain residual portion on said dielectric spacer;    removing said first dielectric layer and said pad oxide layer;    forming inter-gate dielectric layer over said substrate, said floating gate and said dielectric spacer;    forming a second conductive layer on said inter-gate dielectric layer; and    etching said second conductive layer to form a control gate, wherein said control gate is self-aligned to said floating gate, thereby forming a cell unit.    
     
     
         2 . The method of  claim 1 , further comprising following steps after forming said control gate: 
 forming an isolation layer on said cell unit;    forming via holes in said isolation layer;    forming a second doped region in said substrate via said via hole; and    forming conductive plugs in said via holes.    
     
     
         3 . The method of  claim 1 , wherein said first dielectric layer includes nitride.  
     
     
         4 . The method of  claim 3 , wherein said first dielectric layer is removed by heated solution of phosphorus acid.  
     
     
         5 . The method of  claim 1 , wherein said pad oxide is removed by HF solution or buffer oxide etching solution.  
     
     
         6 . The method of  claim 1 , wherein said first conductive layer comprises polysilicon.  
     
     
         7 . The method of  claim 1 , wherein said second conductive layer comprises polysilicon.  
     
     
         8 . The method of  claim 1 , wherein said second dielectric layer comprises TEOS-oxide.  
     
     
         9 . The method of  claim 1 , wherein said dielectric spacer comprises TEOS-oxide.  
     
     
         10 . The method of  claim 1 , wherein said inter-gate dielectric layer includes ONO or NO.  
     
     
         11 . A method for forming a FLASH device comprising: 
 forming a pad oxide layer on a substrate;    forming a first dielectric layer on said pad oxide layer;    patterning said first dielectric layer;    forming a first conductive layer over said patterned first dielectric layer;    etching said first conductive layer to form conductive spacer on sidewalls of said patterned first dielectric layer to act as a floating gate;    performing an ion implantation to form a first doped region in said substrate;    forming a second dielectric layer on said first dielectric layer;    etching said second dielectric layer to remain residual portion on said floating gate;    removing said first dielectric layer and said pad oxide layer;    forming inter-gate dielectric layer over said substrate, said floating gate;    forming a second conductive layer on said inter-gate dielectric layer; and    etching said second conductive layer to form a control gate, wherein said control gate is self-aligned to said floating gate, thereby forming a cell unit.    
     
     
         12 . The method of  claim 11 , further comprising following steps after forming said control gate: 
 forming an isolation layer on said cell unit;    forming via holes in said isolation layer;    forming a second doped region in said substrate via said via hole; and    forming conductive plugs in said via holes.    
     
     
         13 . The method of  claim 11 , wherein said first dielectric layer includes nitride.  
     
     
         14 . The method of  claim 13 , wherein said first dielectric layer is removed by heated solution of phosphorus acid.  
     
     
         15 . The method of  claim 11 , wherein said pad oxide is removed by HF solution or buffer oxide etching solution.  
     
     
         16 . The method of  claim 11 , wherein said first conductive layer comprises polysilicon.  
     
     
         17 . The method of  claim 11 , wherein said second conductive layer comprises polysilicon.  
     
     
         18 . The method of  claim 11 , wherein said second dielectric layer comprises TEOS-oxide.  
     
     
         19 . The method of  claim 11 , wherein said inter-gate dielectric layer includes ONO or NO.  
     
     
         20 . A structure of a FLASH device comprising: 
 a first dielectric layer formed on a substrate;    a floating gate with spacer profile formed on said first dielectric layer;    a second dielectric layer formed along the approximately vertical surface of said floating gate wherein a lateral portion of said second dielectric layer laterally extends over said substrate adjacent said floating gate;    a control gate formed on said lateral portion of said second dielectric layer; and    wherein said control gate attached on said second dielectric layer and on said lateral portion of said second dielectric layer.    
     
     
         21 . The structure of  claim 20 , wherein said first dielectric layer includes oxide.  
     
     
         22 . The structure of  claim 20 , wherein said floating gate comprises polysilicon.  
     
     
         23 . The structure of  claim 20 , wherein said control gate comprises polysilicon.  
     
     
         24 . The structure of  claim 20 , wherein said second dielectric layer includes ONO or NO.  
     
     
         25 . The structure of  claim 20 , wherein said dielectric spacer comprises TEOS-oxide.  
     
     
         26 . The structure of  claim 20 , further comprising a dielectric spacer formed on said floating gate for isolation.