Method of removing germanium contamination on semiconductor substrate

Abstract

A method of removing Ge contamination existing on a semiconductor substrate is provided. A surface of a semiconductor substrate is oxidized to convert a germanium (Ge) contamination existing on the surface of the substrate to an oxide of Ge. Thereafter, the surface of the substrate is contacted with an aqueous solution containing fluorine (F) ions. The oxide of germanium existing on the surface of the substrate is dissolved in the solution, thereby removing the Ge contamination from the substrate. Possible performance degradation of a semiconductor device to be fabricated with the substrate having the Ge contamination is prevented.

What is claimed is:  
     
         1 . A method of removing germanium (Ge) contamination on a semiconductor substrate, comprising the steps of: 
 oxidizing a surface of a semiconductor substrate to convert a germanium contamination existing on the surface of the substrate to an oxide of germanium; and    contacting the surface of the substrate with an aqueous solution containing fluorine (F) ions.    
     
     
         2 . The method according to  claim 1 , wherein the oxide of germanium existing on the surface of the substrate is dissolved in the solution.  
     
     
         3 . The method according to  claim 1 , wherein at least one selected from the group consisting of DHF, FPM, and BHF is used as the aqueous solution containing fluorine (F) ions.  
     
     
         4 . The method according to  claim 1 , wherein at least one selected from the group consisting of APM, HPM, SPM, and aqua regia is used in the oxidation step.  
     
     
         5 . The method according to  claim 1 , wherein an oxygen (O 2 ) plasma is used for oxidizing the Ge contamination existing on the surface of the substrate.  
     
     
         6 . The method according to  claim 1 , wherein an oxygen (O 2 ) plasma is used for oxidizing the Ge contamination existing on the surface of the substrate and thereafter, at least one selected from the group consisting of APM, HPM, SPM, and aqua regia is used for further oxidizing the Ge contamination.