US2003218215A1PendingUtilityA1

Process for fabricating semiconductor device

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Assignee: SEMICONDUCTOR ENERGY LABPriority: Sep 7, 1993Filed: Feb 27, 2003Published: Nov 27, 2003
Est. expirySep 7, 2013(expired)· nominal 20-yr term from priority
Inventors:Yasuhiko Takemura
H10P 14/3806H10P 14/3816H10P 14/3802H10P 14/3411H10P 14/3238H10P 14/2922H10P 10/00H10D 30/0321H10D 30/6717H10D 86/0229H10D 86/0227H10D 86/0225H10D 30/0314
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Claims

Abstract

A process for fabricating a semiconductor device comprising the step of, after patterning the silicon film crystallized to a blow degree by thermally annealing an amorphous silicon film into an island by etching, irradiating an intense light of a visible light or a near infrared radiation to effect a short-period annealing (RTA) to the silicon film of low crystallinity. Thus, the crystallinity of the silicon film is improved and the silicon film is densified in a short-period.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A semiconductor device comprising; 
 a substrate;    a first base film comprising aluminum nitride and oxygen provided over said substrate;    a second base film comprising silicon oxide provided over said first base film; and    a thin film transistor provided over said second base film.    
     
     
         2 . A device according to  claim 1  wherein said substrate comprises a glass.  
     
     
         3 . A device according to  claim 1  wherein said thin film transistor is provided as a switching element provided in a pixel of a liquid crystal display device.  
     
     
         4 . A device according to  claim 1  wherein said thin film transistor is provided in a driver circuit of a liquid crystal display device.  
     
     
         5 . A device according to  claim 1  wherein said thin film transistor is provided in an image sensor.  
     
     
         6 . A device according to  claim 1  further comprising an interlayer insulating film provided over said thin film transistor.  
     
     
         7 . A device according to  claim 6  wherein said interlayer insulating film comprises silicon oxide.  
     
     
         8 . A device according to  claim 6  wherein said interlayer insulating film comprises a polyimide.  
     
     
         9 . A device according to  claim 6  further comprising a pixel electrode provided over said interlayer insulating film.  
     
     
         10 . A device according to  claim 9 , wherein said pixel electrode comprises ITO.

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