Methods and apparatus for selective, oxidative patterning of a surface
Abstract
The present invention provides methods and apparatus for selectively patterning surfaces using radical species generated with a photocatalyst. The photocatalyst may comprise a photocatalytic semiconductor or a photosensitizer. The radical species are brought into contact with an oxidizable coating disposed on the surface, thereby locally oxidizing and selectively patterning the surface. The photocatalyst is preferably disposed on a delivery device, such as a stamp, mask, or scanning probe, that is brought into close proximity or contact with the coated surface. The photocatalyst is then excited in a manner capable of generating radical species, for example, oxygen-containing radical species, in appropriate media. It is expected that these radical species will be transferred to the coated surface along a substantially shortest distance path, thereby locally oxidizing and patterning the surface.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . Apparatus for selectively patterning an oxidizable surface, the apparatus comprising:
a photocatalyst; a medium in communication with the photocatalyst and the oxidizable surface; and an energy source adapted to excite the photocatalyst, wherein the photocatalyst generates radical species in the medium upon excitation by the energy source.
2 . The apparatus of claim 1 , wherein the oxidizable surface comprises an oxidizable coating disposed on the surface.
3 . The apparatus of claim 1 , wherein the photocatalyst comprises a photocatalytic semiconductor adapted to generate electron hole pairs upon excitation by the energy source, and wherein the electron hole pairs generate the radical species in the medium.
4 . The apparatus of claim 1 , wherein the medium is adapted to transport the radical species from the photocatalyst to the oxidizable surface.
5 . The apparatus of claim 1 , wherein the radical species are adapted to locally oxidize the the oxidizable surface at points where the radical species contact the surface.
6 . The apparatus of claim 5 , wherein locally oxidizing the oxidizable surface comprises locally pattering the surface.
7 . The apparatus of claim 3 , wherein excitation of the photocatalytic semiconductor by the energy source comprises excitation above a band gap of the photocatalytic semiconductor.
8 . The apparatus of claim 1 , wherein the photocatalyst is chosen from the group consisting of photocatalytic semiconductors, TiO 2 , SnO 2 , compounds of InTaO 4 doped with Ni, photosensitizers, photofrins, texaphyrins, metallotexaphyrins, porphyrins, hematoporphyrins, chlorins, bacteriochlorins, phthalocyanines, purpurins, and combinations thereof.
9 . The apparatus of claim 1 further comprising a delivery device on which the photocatalyst is disposed.
10 . The apparatus of claim 9 , wherein the delivery device is chosen from the group consisting of stamps, masks, probes, scanning probes, and combinations thereof.
11 . The apparatus of claim 9 , wherein the photocatalyst is disposed on the delivery device in a specified pattern.
12 . The apparatus of claim 11 , wherein the specified pattern comprises a pattern chosen from the group consisting of an entirety of the delivery device, a 2-dimensionally patterned section of the delivery device, a 3-dimensionally patterned section of the delivery device, a tip of a scanning probe, a localized region of the delivery device, and combinations thereof.
13 . The apparatus of claim 11 , wherein the specified pattern is fabricated using e-beam lithography.
14 . The apparatus of claim 1 , wherein the energy source is chosen from the group consisting of visible light sources, UV sources, x-ray sources, visible light lamps, UV lamps, x-ray lamps, mercury lamps, visible light lasers, HeNe lasers, UV lasers, x-ray lasers, pulsed lamps, pulsed lasers, and combinations thereof.
15 . The apparatus of claim 1 , wherein the oxidizable surface comprises a surface chosen from the group consisting of alkane thiols, thioethers, unsaturated materials, saturated materials, bare metal surfaces, metal oxides, and combinations thereof.
16 . The apparatus of claim 9 further comprising a second photocatalyst disposed on the delivery device.
17 . The apparatus of claim 11 , wherein the delivery device inhibits transmission of excitation energy provided by the energy source outside of the specified pattern.
18 . The apparatus of claim 1 , wherein the medium comprises a fluid medium.
19 . The apparatus of claim 1 , wherein the medium comprises an oxidant chosen from the group consisting of oxygen, nitrogen, oxidizing ions, Redox species, Redox mediators, electron transfer agents, and combinations thereof.
20 . The apparatus of claim 1 , wherein the medium comprises a medium chosen from the group consisting of gaseous mediums, liquid mediums, aqueous mediums, organic mediums, inorganic mediums, water, gels, air, oxygen-containing mediums, nitrogen-containing mediums, thiohexamic ester-containing mediums, Argon gas, vacuum, and combinations thereof.
21 . The apparatus of claim 1 further comprising a stabilizing agent.
22 . The apparatus of claim 21 , wherein the stabilizing agent is chosen from the group consisting of selenium, zinc, lipoic acid, methionine, cysteine, N,N Dimethyl glycine, and combinations thereof.
23 . A method for selectively patterning an oxidizable surface, the method comprising:
providing a photocatalyst in close proximity or contact to the surface; exciting the photocatalyst; generating radical species with the excited photocatalyst; transferring the radical species to the surface; and locally oxidizing the surface at points where the radical species contact the surface, thereby selectively patterning the surface.
24 . The method of claim 23 , wherein the photocatalyst comprises a photocatalytic semiconductor, and wherein exciting the photocatalyst comprises forming electron hole pairs in or on the photocatalytic semiconductor.
25 . The method of claim 24 , wherein forming electron hole pairs in or on the photocatalytic semiconductor comprises exciting the photocatalytic semiconductor above its band gap.
26 . The method of claim 24 , wherein generating radical species with the excited photocatalyst comprises generating radical species with the electron hole pairs.
27 . The method of claim 26 , wherein generating radical species with the electron hole pairs comprises generating species by contacting the electron hole pairs with a medium in communication with the photocatalytic semiconductor.
28 . The method of claim 23 , wherein the photocatalyst comprises a photosensitizer.
29 . The method of claim 23 , wherein transferring the radical species to the surface comprises transferring the radical species to the surface through a medium.
30 . The method of claim 23 , wherein the medium comprises a fluid having an oxidant.
31 . The method of claim 23 , wherein providing a photocatalyst comprises providing a photocatalyst chosen from the group consisting of photocatalytic semiconductors, TiO 2 , SnO 2 , compounds of InTaO 4 doped with Ni, photosensitizers, photofrins, texaphyrins, metallotexaphyrins, porphyrins, hematoporphyrins, chlorins, bacteriochlorins, phthalocyanines, purpurins, and combinations thereof.
32 . The method of claim 23 , wherein providing a photocatalyst comprises providing a photocatalyst disposed on a delivery device.
33 . The method of claim 32 , wherein providing a photocatalyst disposed on a delivery device comprises providing a photocatalyst disposed on a delivery device chosen from the group consisting of stamps, masks, probes, scanning probes, and combinations thereof.
34 . The method of claim 23 , wherein locally oxidizing the surface comprises locally oxidizing a surface chosen from the group consisting of alkane thiols, thioethers, unsaturated materials, saturated materials, bare metal surfaces, metal oxides, and combinations thereof.
35 . The method of claim 23 further comprising:
providing a second photocatalyst in close proximity or contact to the surface;
exciting the second photocatalyst;
generating a second set of radical species with the second excited photocatalyst;
transferring the second set of radical species to the surface; and
locally oxidizing the surface at points where the second set of radical species contact the surface, thereby selectively patterning the surface with a second pattern.
36 . The method of claim 35 , wherein the photocatalyst and the second photocatalyst comprise different photocatalysts.
37 . The method of claim 23 , wherein selectively patterning the surface comprises selectively patterning the surface with a pattern chosen from the group consisting of positive patterns, negative patterns, continuous patterns, discontinuous patterns, multi-step patterns, one-dimensional patterns, two-dimensional patterns, three-dimensional patterns, and combinations thereof.
38 . The apparatus of claim 1 , wherein a bias voltage is applied to the oxidizable surface.
39 . A patterned surface made by a process comprising:
generating radical species with a photocatalyst; and locally oxidizing the surface with the radical species to pattern the surface.
40 . The patterned surface made by the process of claim 39 , wherein generating radical species with the photocatalyst further comprises generating radical species with a photocatalytic semiconductor.
41 . The patterned surface made by the process of claim 40 , wherein generating radical species with the photocatalytic semiconductor further comprises forming electron hole pairs in the photocatalytic semiconductor that form radical species upon exposure to appropriate media.
42 . The patterned surface made by the process of claim 39 , wherein generating radical species with the photocatalyst further comprises generating radical species with a photosensitizer.
43 . The patterned surface made by the process of claim 39 , wherein generating radical species with the photocatalyst further comprises exciting the photocatalyst with an energy source.
44 . The patterned surface made by the process of claim 39 , wherein locally oxidizing the surface with the radical species to pattern the surface comprises patterning the surface with features having a size smaller than about 100 nm.
45 . The patterned surface made by the process of claim 39 , wherein locally oxidizing the surface with the radical species to pattern the surface comprises patterning the surface with a resolution finer than about 100 nm.
46 . The patterned surface made by the process of claim 39 , wherein generating radical species with the photocatalyst further comprises generating radical species with a photocatalyst disposed on a delivery device.
47 . The patterned surface made by the process of claim 46 , wherein generating radical species with a photocatalyst disposed on a delivery device further comprises generating radical species with a photocatalyst disposed on a delivery device chosen from the group consisting of stamps, masks, probes, scanning probes, and combinations thereof.
48 . The patterned surface made by the process of claim 46 , wherein generating radical species with a photocatalyst disposed on a delivery device further comprises generating radical species with a photocatalyst disposed on a delivery device in a specified pattern.
49 . The patterned surface made by the process of claim 48 , wherein generating radical species with a photocatalyst disposed on a delivery device in a specified pattern further comprises generating radical species with a photocatalyst disposed on a delivery device in a specified pattern that has features with a size smaller than 100 nm.
50 . The patterned surface made by the process of claim 48 , wherein locally oxidizing the surface with the radical species to pattern the surface comprises transferring the radical species from the specified pattern on the delivery device to the surface along a substantially shortest distance path.
51 . The patterned surface made by the process of claim 39 , wherein generating radical species with a photocatalyst further comprises generating radical species with a photocatalyst chosen from the group consisting of photocatalytic semiconductors, TiO 2 , SnO 2 , compounds of InTaO 4 doped with Ni, photosensitizers, photofrins, texaphyrins, metallotexaphyrins, porphyrins, hematoporphyrins, chlorins, bacteriochlorins, phthalocyanines, purpurins, and combinations thereof.Join the waitlist — get patent alerts
Track US2003215723A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.