Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device, which comprises the steps of forming an intermediate layer on an insulating layer, forming a groove in the intermediate layer and the insulating layer, forming a first barrier layer on the intermediate layer, depositing a wiring layer on the first barrier layer to thereby fill the groove with the wiring layer, performing a flattening treatment of the wiring layer, removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed lower than a surface of the insulating layer, thus forming a recessed portion, forming a second barrier layer on the intermediate layer and on an inner wall of the recessed portion, performing a flattening treatment of the second barrier layer, thereby, and selectively removing the intermediate layer, exposing the insulating layer.

What is claimed is:  
     
         1 . A method of manufacturing a semiconductor device, which comprises the steps of: 
 forming an intermediate layer on an insulating layer formed in advance on a semiconductor substrate;    forming a groove in the intermediate layer and the insulating layer;    forming a first barrier layer on a surface of the intermediate layer as well as on an inner surface of the groove;    depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;    performing a flattening treatment of a surface of the wiring layer to thereby form a buried structure consisting of the first barrier layer and a wiring inside the groove;    removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;    forming a second barrier layer on a surface of the intermediate layer as well as on an inner surface of the recessed portion;    performing a flattening treatment of a surface of the second barrier layer, thereby allowing the surface of the intermediate layer to be exposed; and    selectively removing the intermediate layer, thereby allowing the surface of the insulating layer to be exposed.    
     
     
         2 . The method according to  claim 1 , wherein said step of selectively removing the intermediate layer is followed by a step of performing a chemical mechanical polishing under a condition wherein the second barrier layer is polished.  
     
     
         3 . The method according to  claim 1 , wherein said intermediate layer is formed of at least one kind of film selected from the group consisting of a carbon film, a silicon nitride film and a silicon oxide film.  
     
     
         4 . A method of manufacturing a semiconductor device, which comprises the steps of: 
 forming a groove in an insulating layer formed in advance on a semiconductor substrate;    forming a first barrier layer on a surface of the insulating layer as well as on an inner surface of the groove;    depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;    performing a flattening treatment of a surface of the wiring layer to thereby allow the first barrier layer to be continuously left at least on the insulating layer throughout an entire surface of the semiconductor substrate, thereby filling the groove with a wiring;    removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;    forming a second barrier layer on the first barrier layer as well as on the wiring by means of an electro-plating method where the first barrier layer remaining on the insulating layer is employed as an electrode; and    performing a flattening treatment of surfaces of the second barrier layer and the first barrier layer until the surface of the insulating layer is exposed.    
     
     
         5 . The method according to  claim 4 , wherein said wiring layer is formed by means of an electroplating method.  
     
     
         6 . A method of manufacturing a semiconductor device, which comprises the steps of: 
 forming a conductive layer on an insulating layer formed in advance on a semiconductor substrate;    forming a groove penetrating into the conductive layer and the insulating layer;    forming a first barrier layer on a surface of the conductive layer as well as on an inner surface of the groove;    depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;    performing a flattening treatment of a surface of the wiring layer to thereby allow the conductive layer to be continuously left at least on the insulating layer, thereby filling the groove with a wiring;    removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;    forming a second barrier layer on the conductive layer as well as on the wiring by means of an electroplating method where the conductive layer remaining on the insulating layer is employed as an electrode; and    performing a flattening treatment of surfaces of the second barrier layer and the conductive layer until the surface of the insulating layer is exposed.    
     
     
         7 . The method according to  claim 6 , wherein said wiring layer is formed by means of an electro-plating method.  
     
     
         8 . A method of manufacturing a semiconductor device, which comprises the steps of: 
 forming a groove in an insulating layer formed in advance on a semiconductor substrate;    forming a first barrier layer on a surface of insulating layer;    depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;    performing a flattening treatment of a surface of the wiring layer to thereby forming a structure consisting of the first barrier layer and a wiring which are buried inside the groove;    performing a recess etching treatment of the wiring by making use of an etching solution comprising an oxidizing agent which is reactive to main element constituting the wiring, a complex forming agent which is capable of forming a complex together with ions of the main element constituting the wiring, and a solvent for the complex, thereby permitting the surface of the wiring to be recessed to form a recessed portion;    forming a second barrier layer on the wiring as well as on the insulating layer to thereby fill the recessed portion with the second barrier layer; and    performing a flattening treatment of a surface of the second barrier layer until the surface of the insulating layer is exposed, thereby leaving the second barrier layer inside the recessed portion.    
     
     
         9 . The method according to  claim 8 , wherein said oxidizing agent is at least one kind of material selected from the group consisting of an aqueous solution of hydrogen peroxide, ammonium peroxosulfate and an aqueous solution of ozone.  
     
     
         10 . The method according to  claim 8 , wherein said complex forming agent is at least one kind of material selected from the group consisting of amino acid, ethylene-diamine, ethylene-diamine-tetraacetic acid and aminosulfonic acid.  
     
     
         11 . The method according to  claim 10 , wherein said amino acid is glycine.  
     
     
         12 . The method according to  claim 8 , wherein said solvent is water.  
     
     
         13 . The method according to  claim 8 , wherein said recess etching treatment is continuously performed inside a flattening device employed in the preceding step of flattening treatment.  
     
     
         14 . The method according to  claim 8 , wherein said recess etching treatment is performed inside a processing chamber employed in a washing step to be performed subsequent to the preceding step of flattening treatment.  
     
     
         15 . A semiconductor device which comprises: 
 an insulating layer which is provided with a groove and formed on a semiconductor substrate;    a first barrier layer formed on an inner surface of the groove of the insulating layer;    a wiring which is formed inside the groove of the insulating layer and whose surface is recessed lower than the insulating layer; and    a second barrier layer formed on the wiring;    wherein an angle between the surface of the wiring and the first barrier layer at a sidewall of the groove is 60° or more.    
     
     
         16 . The semiconductor device according to  claim 15 , wherein said angle between the surface of the wiring and the first barrier layer at a sidewall of the groove is within the range of 60° to 90°.  
     
     
         17 . A semiconductor device to be manufactured by the method as claimed in  claim 8 , which comprises: 
 an insulating layer which is provided with a groove and formed on a semiconductor substrate;    a first barrier layer formed on an inner surface of the groove of the insulating layer;    a wiring which is formed inside the groove of the insulating layer and whose surface is recessed lower than the insulating layer; and    a second barrier layer formed on the wiring;    wherein an angle between the surface of the wiring and the first barrier layer at a sidewall of the groove is 60° or more.    
     
     
         18 . The semiconductor device according to  claim 17 , wherein said angle between the surface of the wiring and the first barrier layer at a sidewall of the groove is within the range of 60° to 90°.  
     
     
         19 . An etching solution for etching copper or a copper alloy, which comprises: 
 an oxidizing agent of 0.01 to 10 mol/L which is reactive to copper;    a complex forming agent of 0.0001 to 1 mol/L which is capable of forming a complex together with copper ion; and    a solvent for the complex.    
     
     
         20 . The etching solution according to  claim 19 , wherein said oxidizing agent is at least one kind of material selected from the group consisting of an aqueous solution of hydrogen peroxide, ammonium peroxosulfate and an aqueous solution of ozone; said complex forming agent is at least one kind of material selected from the group consisting of amino acid, ethylene-diamine, ethylene-diamine-tetraacetic acid and aminosulfonic acid; and said solvent is water.