US2003213958A1PendingUtilityA1

Material for forming insulating film with low dielectric constant, low dielectric insulating film method for forming low dielectric insulating film and semiconductor device

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Assignee: MATSUSHITA ELECTRIC INDUSTRIAL CO LTDPriority: May 14, 2002Filed: May 14, 2003Published: Nov 20, 2003
Est. expiryMay 14, 2022(expired)· nominal 20-yr term from priority
Inventors:Hideo NakagawaMasaru Sasago
H10W 72/552H10W 72/536H10W 72/951H10W 72/934H10W 72/9232H10W 72/59H10W 72/952H10W 72/075H10W 72/01333H10W 72/019H10W 20/48H10W 20/495H10W 20/072H10W 20/46H10P 14/6922H10P 14/6686H10P 14/6342H10P 14/665H10W 20/031H10P 95/90H10P 14/683
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Claims

Abstract

A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A material for forming an insulating film with low dielectric constant comprising a solution including a fine particle that is principally composed of a silicon atom and an oxygen atom and has a large number of pores; a resin; and a solvent.  
     
     
         2 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said fine particle has a size more than approximately 1 nm and less than approximately 30 nm.    
     
     
         3 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein each of said pores in said fine particle has a size more than approximately 0.5 nm and less than approximately 3 nm.    
     
     
         4 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said pores in said fine particle are partially confined.    
     
     
         5 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said pores in said fine particle are isolated.    
     
     
         6 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said fine particle is formed by mechanically crushing a substance having a plurality of open pores randomly distributed.    
     
     
         7 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said fine particle is formed by mechanically crushing a substance having a large number of closed pores substantially uniformly dispersed.    
     
     
         8 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said fine particle is synthesized through a chemical reaction.    
     
     
         9 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said resin is a silicon resin.    
     
     
         10 . The material for forming an insulating film with low dielectric constant of  claim 9 , 
 wherein said silicon resin includes organic silicon.    
     
     
         11 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said resin is an organic polymer.    
     
     
         12 . The material for forming an insulating film with low dielectric constant of  claim 1 , 
 wherein said solution further includes a compound for reinforcing bond between said resin and said fine particle.    
     
     
         13 . A material for forming an insulating film with low dielectric constant comprising a fine particle, 
 said fine particle being formed by mechanically crushing a substance that is principally composed of a silicon atom and an oxygen atom and has a plurality of open pores randomly distributed, and said fine particle having a large number of pores formed by said plurality of open pores.    
     
     
         14 . A material for forming an insulating film with low dielectric constant comprising a fine particle, 
 said fine particle being formed by mechanically crushing a substance that is principally composed of a silicon atom and an oxygen atom and has a large number of closed pores substantially uniformly dispersed, and said fine particle having a large number of pores formed by said closed pores.    
     
     
         15 . A material for forming an insulating film with low dielectric constant comprising a fine particle, 
 said fine particle being synthesized through a chemical reaction, being principally composed of a silicon atom and an oxygen atom and having a large number of pores.    
     
     
         16 . A method for forming an insulating film with low dielectric constant comprising the steps of: 
 forming a thin film by applying, on a substrate, a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent; and    annealing said substrate for evaporating said solvent, whereby forming an insulating film with low dielectric constant out of said thin film.    
     
     
         17 . The method for forming an insulating film with low dielectric constant of  claim 16 , 
 wherein said fine particle has a size more than approximately 1 nm and less than approximately 30 nm.    
     
     
         18 . The method for forming an insulating film with low dielectric constant of  claim 16 , 
 wherein each of said pores in said fine particle has a size more than approximately 0.5 nm and less than approximately 3 nm.    
     
     
         19 . The method for forming an insulating film with low dielectric constant of  claim 16 , 
 wherein said resin is a silicon resin.    
     
     
         20 . The method for forming an insulating film with low dielectric constant of  claim 19 , 
 wherein said silicon resin includes organic silicon.    
     
     
         21 . The method for forming an insulating film with low dielectric constant of  claim 16 , 
 wherein said resin is an organic polymer.    
     
     
         22 . The method for forming an insulating film with low dielectric constant of  claim 16 , 
 wherein said solution further includes a compound for reinforcing bond between said resin and said fine particle.    
     
     
         23 . The method for forming an insulating film with low dielectric constant of  claim 16 , 
 wherein the step of annealing said substrate includes a sub-step of bonding said fine particle to said resin.    
     
     
         24 . A low dielectric insulating film comprising: 
 a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores; and    a resin bonded to said fine particle.    
     
     
         25 . The low dielectric insulating film of  claim 24 , 
 wherein said fine particle has a size more than approximately 1 nm and less than approximately 30 nm.    
     
     
         26 . The low dielectric insulating film of  claim 24 , 
 wherein each of said pores in said fine particle has a size more than approximately 0.5 nm and less than approximately 3 nm.    
     
     
         27 . The low dielectric insulating film of  claim 24 , 
 wherein said resin is a silicon resin.    
     
     
         28 . The low dielectric insulating film of  claim 27 , 
 wherein said silicon resin includes organic silicon.    
     
     
         29 . The low dielectric insulating film of  claim 24 , 
 wherein said resin is an organic polymer.    
     
     
         30 . The low dielectric insulating film of  claim 24 , further comprising a compound for reinforcing bond between said resin and said fine particle.  
     
     
         31 . A semiconductor device comprising: 
 a plurality of metal interconnects; and    an insulating film with low dielectric constant formed between said plurality of metal interconnects, said low dielectric insulating film including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, and a resin bonded to said fine particle.    
     
     
         32 . The semiconductor device of  claim 31 , 
 wherein said fine particle has a size more than approximately 1 nm and less than approximately 30 nm.    
     
     
         33 . The semiconductor device of  claim 31 , 
 wherein each of said pores in said fine particle has a size more than approximately 0.5 nm and less than approximately 3 nm.    
     
     
         34 . The semiconductor device of  claim 31 , 
 wherein said resin is a silicon resin.    
     
     
         35 . The semiconductor device of  claim 34 , 
 wherein said silicon resin includes organic silicon.    
     
     
         36 . The semiconductor device of  claim 31 , 
 wherein said resin is an organic polymer.    
     
     
         37 . The semiconductor device of  claim 31 , 
 wherein said low dielectric insulating film further includes a compound for reinforcing bond between said resin and said fine particle.

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