Compositions and devices made by synthesis of layers, coatings or films using electrostatic fields

Abstract

Systems and methods are described for synthesis of films, coatings or layers using electrostatic fields. A method includes applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

What is claimed is:  
     
         1 . A method, comprising: 
 applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;    forming a composition layer; and    moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.    
     
     
         2 . The method of  claim 1 , where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant.  
     
     
         3 . The method of  claim 1 , wherein the first chemical reactant includes a first multinary compound and the second chemical reactant includes a second multinary compound.  
     
     
         4 . The method of  claim 1 , wherein the electrostatic field is sufficient change the transport rate of at least one ionic species.  
     
     
         5 . The method of  claim 1 , further comprising reversing the electrostatic field.  
     
     
         6 . The method of  claim 1 , wherein the electrostatic field is applied with an alternating current circuit.  
     
     
         7 . The method of  claim 1 , wherein the electrostatic field modifies a reaction trajectory.  
     
     
         8 . The method of  claim 1 , wherein the electrostatic filed is sufficient to generate a pressure between the first precursor and the second precursor layer.  
     
     
         9 . The method of  claim 8  wherein the pressure is sufficient to substantially prevent escape of vapor from at least one of the first precursor layer, the second precursor layer and the composition layer.  
     
     
         10 . The method of  claim 1 , further comprising heating the first precursor layer.  
     
     
         11 . The method of  claim 1 , wherein at least a portion of the second precursor layer melts and substantially no portion of the first precursor layer melts.  
     
     
         12 . The method of  claim 1 , wherein the first substrate includes a tool.  
     
     
         13 . The method of  claim 12 , wherein a release layer is located between the tool and the first precursor layer.  
     
     
         14 . The method of  claim 13 , wherein the release layer includes at least one fluoride selected from the group consisting of CaF 2  and SrF 2 .  
     
     
         15 . The method of  claim 12 , further comprising coupling another precursor layer to the tool after moving.  
     
     
         16 . The method of  claim 1 , wherein an electrode layer is located between the second precursor layer and the second substrate.  
     
     
         17 . The method of  claim 16 , wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.  
     
     
         18 . The method of  claim 1 , wherein the composition layer includes copper, indium and selenium.  
     
     
         19 . The method of  claim 18 , further comprising controlling the temperature of the second precursor layer within a range of from approximately 520° C. to approximately 635° C.  
     
     
         20 . The method of  claim 18 , wherein the first precursor layer includes (In,Ga) y (S,Se) 1-y  and the second precursor layer includes Cu x Se 1-x .  
     
     
         21 . The method of  claim 1 , wherein a template is located between the first precursor layer and the first substrate.  
     
     
         22 . The method of  claim 1 , wherein a template is located between the second precursor layer and the second substrate.  
     
     
         23 . The method of  claim 1 , wherein a surfactant is located between the first precursor layer and the first substrate.  
     
     
         24 . The method of  claim 1 , wherein a surfactant is located between the first precursor and the second precursor.  
     
     
         25 . The method of  claim 1 , wherein an adhesion layer is located between the first precursor layer and the first substrate.  
     
     
         26 . The method of  claim 1 , wherein an adhesion layer is located between the second precursor layer and the second substrate.  
     
     
         27 . The method of  claim 1 , wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.  
     
     
         28 . The method of  claim 1 , wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.  
     
     
         29 . The method of  claim 1 , wherein 
 the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of physical vapor deposition and chemical vapor deposition; and    the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, physical vapor deposition and chemical vapor deposition.    
     
     
         30 . The method of  claim 1 , further comprising depositing a buffer layer on the composition layer.  
     
     
         31 . The method of  claim 30 , further comprising deposition a window layer on the buffer layer.  
     
     
         32 . A photovoltaic device made by the method of  claim 1 .  
     
     
         33 . An electrical power generation system comprising the photovoltaic device of  claim 32 .  
     
     
         34 . An electronic device made by the method of  claim 1 .  
     
     
         35 . A photodiode made by the method of  claim 1 .  
     
     
         36 . A composition prepared by a process comprising: 
 applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;    forming a composition layer;    and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.    
     
     
         37 . A photovoltaic device comprising the composition of  claim 36 .  
     
     
         38 . An electrical power generation system comprising the photovoltaic device of  claim 37 .  
     
     
         39 . An electronic device comprising the composition of  claim 36 .  
     
     
         40 . A photodiode comprising the composition of  claim 36 .  
     
     
         41 . A process of preparing a film formed of multinary compounds, comprising: 
 applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;    forming a composition layer;    and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.    
     
     
         42 . A photovoltaic device made by the process of  claim 41 .  
     
     
         43 . An electrical power generation system comprising the photovoltaic device of  claim 42 .  
     
     
         44 . An electronic device made by the process of  claim 41 .  
     
     
         45 . A photodiode made by the process of  claim 41 .  
     
     
         46 . A method, comprising: 
 applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;    forming a composition layer; and    modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate.    
     
     
         47 . The method of  claim 46 , wherein modifying includes removing.  
     
     
         48 . The method of  claim 47 , wherein removing includes etching.  
     
     
         49 . The method of  claim 47 , wherein removing includes mechanical motion and a portion of the first substrate is not removed.