Film and method for producing the same

Abstract

Magnetic film comprising a substantially crystalline magnetic layer and an intermediate layer alternately formed in contact with each other, wherein the magnetic layer has composition (M 1 α 1 β 1 ) 100-δ1 A 1 δ 1 (α 1 , β 1 , and δ 1 represent % by atomic weight; M 1 is at least one of Fe, Co, and Ni; X 1 is at least one of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, and transition metals excluding M 1 ; and A 1 is at least one of 0 and N), wherein: 0.1≦β 1 ≦12 α 1 +β 1 =100 0<δ 1 ≦10; the intermediate layer has composition (M 2 α 2 X 2 β 2 ) 100-δ2 A 2 δ 2 (α 2 , β 2 , and δ 2 represent % by atomic weight, M 2 is at least one of Fe, Co, and Ni; X 2 is at least one of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, Ge and transition metals excluding the M 2 ; and A 2 is 0), wherein: 0.1≦β 2 ≦80 α 2 +β 2 =100 δ 1 ≦δ 2 ≦67.

What is claimed is:  
     
         1 . A method for producing a high-resistant layer, comprising the steps of: 
 forming a low-resistant layer containing 10% by atomic weight or more of at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Si, Ge, Sn, Al, Ga, and transition metals excluding at least one magnetic metal selected from the group consisting of Fe, Co, and Ni on either one of a magnetic thin film and a magnetic layer; and    oxidizing or nitriding the low-resistant layer in an atmosphere selected from the group consisting of oxygen, nitrogen, oxygen plasma, and nitrogen plasma.    
     
     
         2 . A method for producing a high-resistant layer according to  claim 1 , wherein the magnetic thin film or the magnetic layer contains an element compatible with oxygen.  
     
     
         3 . A magnetic multilayer comprising a magnetic thin film and a high-resistant layer alternately formed, 
 wherein assuming that an average thickness of the magnetic thin film is T 3 , and an average thickness of the high-resistant layer is T 4 , the following expressions are satisfied:    100 nm≦T 3 ≦1000 nm    2 nm≦T 4 ≦50 nm    10≦T 3 /T 4 ≦500    
     
     
         4 . A thin film head comprising an upper magnetic pole and a lower magnetic pole, wherein the upper magnetic pole includes either one of a high-resistant magnetic film and a magnetic multilayer with high resistivity, having a specific resistance of 80 μΩcm or more, and either one of a magnetic thin film and a magnetic multilayer, 
 the upper magnetic pole and the lower magnetic pole form a recording gap, and  
 either one of the magnetic thin film and the magnetic multilayer is formed at least in the vicinity of the recording gap at an end of the upper magnetic pole.  
 
     
     
         5 . A thin film head according to  claim 4 , wherein either one of the magnetic thin film and the magnetic multilayer is formed at least in the recording gap, and 
 either one of the high-resistant magnetic film and the magnetic multilayer with high resistivity having a specific resistance of 80 μΩcm or more is formed on either one of the magnetic thin film and the magnetic multilayer.    
     
     
         6 . A method for producing a thin film, comprising: 
 a first step of moving a substrate onto which a film is formed and a source for supplying material for forming a film in a relative manner; and    a second step of forming at least one of a magnetic thin film, a magnetic multilayer, a high-resistant magnetic film, and a magnetic multilayer with high resistivity,    wherein at least one magnetization difficult axis of the magnetic thin film, the magnetic multilayer, the high-resistant magnetic film, and the magnetic multilayer is formed in a movement direction in which the substrate and the source are moved in a relative manner.    
     
     
         7 . A method for producing a thin film according to  claim 6 , wherein the movement direction includes a depth direction of an upper magnetic pole of a thin film head.  
     
     
         8 . A method for producing a thin film according to  claim 6 , wherein the first step includes forming a film by a vapor growth method for generating a magnetic field of 50 Oe or more which is substantially orthogonal to the movement direction, substantially parallel to a film formation surface on the substrate, substantially uniform, and substantially in one direction.  
     
     
         9 . A method for producing a thin film according to  claim 6 , wherein the first step includes forming a film by changing a concentration of oxygen, oxygen plasma, nitrogen, or nitrogen plasma in a vapor growth apparatus.  
     
     
         10 . A method for producing a thin film according to  claim 6 , wherein a temperature of the substrate during formation of a film is substantially 300° C. or less.  
     
     
         11 . A hard disk drive using the magnetic multilayer of  claim 3  as a magnetic pole.  
     
     
         12 . A hard disk drive using the magnetic multilayer of  claim 3  as a part of a shield.