US2003209713A1PendingUtilityA1

Semiconductor, electrooptic apparatus and electronic apparatus

Assignee: SEIKO EPSON CORPPriority: Mar 29, 2002Filed: Mar 25, 2003Published: Nov 13, 2003

Est. expiryMar 29, 2022(expired)· nominal 20-yr term from priority

Inventors:Mutsumi Kimura Sumio Utsunomiya Hiroyuki Hara Wakao Miyazawa

H10W 72/884H10W 90/754H10W 74/15H10W 72/07141H10W 72/07236H10W 72/07204H10W 72/0711H10W 90/724H10W 90/734H10P 72/7414H10K 59/129H10D 64/00

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References

Claims

Abstract

In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.

Claims

exact text as granted — not AI-modified

What is claimed is:  
     
         1 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, only the first pads being formed on a surface of the element chip at a second-substrate-side.    
     
     
         2 . The semiconductor device according to  claim 1 , the functional elements being farther from the second substrate than the first pads.  
     
     
         3 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, only the first pads being formed on a surface of the element chip remote from the second substrate.    
     
     
         4 . The semiconductor device according to  claim 3 , the functional elements being formed to be closer to the second substrate than the first pads.  
     
     
         5 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the first pads being formed on both a surface of the element chip at a second-substrate-side and a surface of the element chip remote from the second substrate.    
     
     
         6 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the following expression being satisfied:      L&gt; 2π 1/2   S   1/2      where L is the peripheral length and S is the area of the element chip.    
     
     
         7 . The semiconductor device according to  claim 6 , the following expression being satisfied: L&gt;4S 1/2 .  
     
     
         8 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, at least one of the first pads and the second pads being formed using a low-melting-point material including at least one of solder, indium, and lead.    
     
     
         9 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the first pads being formed to protrude from a side face of the element chip outwardly parallel to a plane of the first substrate, and shapes corresponding to the first pads being formed in the second substrate.    
     
     
         10 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the first pads having a convex shape and the second pads having a concave shape, or the first pads having a concave shape and the second pads having a convex shape.    
     
     
         11 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, a low-dielectric-constant material being used in an insulating layer of the element chip.    
     
     
         12 . A semiconductor device, comprising: 
 first and second substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, at least one of air, liquid, and vacuum being used in an insulating layer of the element chip.    
     
     
         13 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, only the first pads being formed on a surface of the element chip at the second-substrate-side.    
     
     
         14 . The semiconductor device according to  claim 13 , the functional elements being farther from the second substrate than the first pads.  
     
     
         15 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, only the first pads being formed on a surface of the element chip remote from the second substrate.    
     
     
         16 . The semiconductor device according to  claim 15 , the functional elements being formed to be closer to the second substrate than the first pads.  
     
     
         17 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the first pads being formed on both a surface of the element chip at a second-substrate-side and a surface of the element chip remote from the second substrate.    
     
     
         18 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the following expression being satisfied:      L&gt; 2π 1/2   S   1/2      where L is the peripheral length and S is the area of the element chip.    
     
     
         19 . The semiconductor device according to  claim 18 , the following expression being satisfied L&gt;4S 1/2 .  
     
     
         20 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, at least one of first pads and the second pads being formed using a low-melting-point material including at least one of solder, indium, and lead.    
     
     
         21 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the first pads being formed to protrude from a side face of the element chip outwardly parallel to the plane of the first substrate, and shapes corresponding to the first pads being formed in the second substrate.    
     
     
         22 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, the first pads having a convex shape and the second pads having a concave shape, or the first pads having a concave shape and the second pads having a convex shape.    
     
     
         23 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, a low-dielectric-constant material being used in an insulating layer of the element chip.    
     
     
         24 . A semiconductor device, comprising: 
 first, second and third substrates;    functional elements formed on the first substrate;    an element chip including at least one functional element, the element chip being separated and transferred to the third substrate, the element chip also being transferred to the second substrate; and    first and second pads that are each formed of a conductive material, the first pads being disposed on the element chip, the second pads being disposed on the second substrate, the first pads being connected to the second pads, at least one of air, liquid, and vacuum being used in an insulating layer of the element chip.    
     
     
         25 . The semiconductor device according to  claim 1 , the separating and transferring of the element chip being performed using laser radiation.  
     
     
         26 . The semiconductor device according to  claim 1 , the functional elements being thin-film transistors.  
     
     
         27 . The semiconductor device according to  claim 1 , the functional elements being organic electroluminescent elements.  
     
     
         28 . An electrooptic apparatus, comprising: 
 the semiconductor device according to  claim 1 .    
     
     
         29 . An electronic apparatus, comprising: 
 the semiconductor device according to  claim 1.

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