Manufacturing use of photomasks with an opaque pattern comprising an organic layer photoabsorptive to exposure light with wavelengths exceeding 200 nm

Abstract

Well printing a specified pattern even when exposure treatment using a resist mask uses exposure light with a wavelength over 200 nm. When exposure treatment is applied to a semiconductor wafer 1 W by using exposure light EXP with a wavelength over 200 nm, a photomask MR is used. The photomask MR is provided with an opaque pattern 5 comprising a resist layer 4 a on a photoabsorptive organic layer 3 a in reaction to exposure light EXP.

What is claimed is:  
     
         1 . A method of manufacturing a semiconductor device comprising the step of printing a specified pattern on a semiconductor wafer by conducting exposure treatment using a photomask provided with an opaque pattern comprising a photoabsorptive organic layer in reaction to exposure light with a wavelength over 200 nm.  
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said organic layer comprises a layered set of a photoabsorptive organic layer in reaction to exposure light with a wavelength over 200 nm and a photosensitive organic layer.  
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 2 , wherein an absorbance coefficient of said photoabsorptive organic layer against exposure light is greater than an absorbance coefficient of said photosensitive organic layer.  
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said exposure treatment is a process for printing a resist pattern used as a mask for implanting specified impurities in said semiconductor wafer.  
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said specified pattern is a wire pattern.  
     
     
         6 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) printing a first pattern on a semiconductor wafer by conducting exposure treatment through the use of a first photomask provided with an opaque pattern comprising a first photoabsorptive organic layer in reaction to first exposure light; and    (b) printing a second pattern on said semiconductor wafer by conducting exposure treatment through the use of a second photomask provided with an opaque pattern comprising a second photoabsorptive organic layer in reaction to second exposure light whose wavelength is longer than said first exposure light.    
     
     
         7 . The method of manufacturing a semiconductor device according to  claim 6 , wherein said first organic layer is structured as a single photosensitive organic layer.  
     
     
         8 . The method of manufacturing a semiconductor device according to  claim 6 , wherein said second organic layer is structured as a layered set of a photoabsorptive organic layer in reaction to said second exposure light and a photosensitive organic layer.  
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 8 , wherein an absorbance coefficient of said photoabsorptive organic layer against exposure light is greater than an absorbance coefficient of said photosensitive organic layer.  
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 6 , wherein a wavelength of said second exposure light exceeds 200 nm.  
     
     
         11 . The method of manufacturing a semiconductor devices according to  claim 6 , wherein said first pattern is a gate electrode pattern of a field effect transistor constituting a semiconductor device.  
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 6 , wherein the exposure treatment using said second exposure light is a process of printing a resist pattern as a mask for implanting impurities for forming a semiconductor area on said semiconductor wafer.  
     
     
         13 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) during exposure treatment for printing a first pattern including a pattern whose dimension is smaller than or equal to a specified value, printing said first pattern on a semiconductor wafer by conducting exposure treatment through the use of a first photomask provided with an opaque pattern comprising a first photoabsorptive organic layer in reaction to first exposure light.    (b) during exposure treatment for printing a second pattern including a pattern whose dimension exceeds said specified value, printing said second pattern on said semiconductor wafer by conducting exposure treatment through the use of a second photomask provided with an opaque pattern comprising a second photoabsorptive organic layer in reaction to second exposure light whose wavelength is longer than that of said first exposure light.    
     
     
         14 . The method of manufacturing a semiconductor device according to  claim 13 , wherein said second organic layer comprises a photosensitive organic layer formed on a photoabsorptive organic layer in reaction to said second exposure light.  
     
     
         15 . The method of manufacturing a semiconductor device according to  claim 14 , wherein an absorbance coefficient of said photoabsorptive organic layer against exposure light is greater than an absorbance coefficient of said photosensitive organic layer.  
     
     
         16 . The method of manufacturing a semiconductor device according to  claim 13 , wherein a wavelength of said second exposure light exceeds 200 nm.  
     
     
         17 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) printing a first pattern on a semiconductor wafer by conducting exposure treatment through the use of a first photomask provided with an opaque pattern comprising a first photoabsorptive organic layer in reaction to first exposure light with the exposure wavelength of 200 nm or less; and    (b) printing a second pattern on said semiconductor wafer by conducting exposure treatment through the use of a second photomask provided with an opaque pattern comprising a photosensitive organic layer formed on a photoabsorptive organic layer in reaction to second exposure light whose wavelength exceeds 200 nm.    
     
     
         18 . The method of manufacturing a semiconductor device according to  claim 17 , wherein an absorbance coefficient of said photoabsorptive organic layer against exposure light is greater than an absorbance coefficient of said photosensitive organic layer.  
     
     
         19 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) conducting exposure treatment up to a process of forming a gate electrode by using a photomask provided with an opaque pattern comprising a metal layer to print a first pattern on a semiconductor wafer; and    (b) conducting exposure treatment after a process of forming a gate electrode by using a photomask provided with an opaque pattern comprising a photosensitive organic layer formed on an opaque photoabsorptive organic layer in reaction to exposure light with a specified wavelength.    
     
     
         20 . The method of manufacturing a semiconductor device according to  claim 19 , wherein an absorbance coefficient of said photoabsorptive organic layer against exposure light is greater than an absorbance coefficient of said photosensitive organic layer.  
     
     
         21 . The method of manufacturing a semiconductor device according to  claim 19 , wherein said specified wavelength exceeds 200 nm.  
     
     
         22 . A method of manufacturing a semiconductor device comprising the steps of: 
 (a) fabricating a photomask by forming an opaque pattern comprising an organic layer on a mask plate by using an electron beam writer;    (b) printing a pattern on a semiconductor wafer by conducting exposure treatment using said photomask; and    (c) directly writing a pattern on said semiconductor wafer by using said electron beam writer.    
     
     
         23 . The method of manufacturing a semiconductor device according to  claim 22 , wherein said organic layer comprises a photosensitive organic layer formed on a photoabsorptive organic layer in reaction to exposure light for said exposure treatment.  
     
     
         24 . The method of manufacturing a semiconductor device according to  claim 23 , wherein an absorbance coefficient of said photoabsorptive organic layer against exposure light is greater than an absorbance coefficient of said photosensitive organic layer.  
     
     
         25 . The method of manufacturing a semiconductor device according to  claim 23 , wherein a wavelength of said specified wavelength exceeds 200 nm.  
     
     
         26 . A method of manufacturing a semiconductor device comprising the step of printing a specified pattern on a semiconductor wafer by conducting exposure treatment using a photomask provided with a dim pattern comprising a dimming organic layer in reaction to exposure light with a wavelength over 200 nm.  
     
     
         27 . The method of manufacturing a semiconductor device according to  claim 26 , wherein said organic layer comprises a photosensitive organic layer formed on a photoabsorptive organic layer in reaction to exposure light for said exposure treatment.  
     
     
         28 . The method of manufacturing a semiconductor device according to  claim 27 , wherein a pattern width of said photoabsorptive organic substance is smaller than a pattern width of said photosensitive organic substance so that said photosensitive organic substance has a pattern with protruding ends.  
     
     
         29 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said exposure treatment uses oblique illumination.  
     
     
         30 . A method of manufacturing a semiconductor device comprising the steps of illuminating photomasks having opaque patterns, and repeatedly conducting projection exposure for printing said patterns on a semiconductor wafer via projection optics to consecutively form specified patterns, wherein: 
 an exposure is conducted by using exposure light with a wavelength over 200 nm through the use of a photomask having said opaque pattern at least partially comprising a photoabsorptive organic layer in reaction to exposure light and a photosensitive composition.    
     
     
         31 . A method of manufacturing a semiconductor device comprising the steps of illuminating photomasks having opaque patterns, and repeatedly conducting projection exposure for printing said patterns on a semiconductor wafer via projection optics to consecutively form specified patterns, wherein: 
 said photomasks are selectively used according to processes as a first photomask having said opaque pattern comprising a photosensitive composition and a second photomask having said opaque pattern comprising a layered set of a photoabsorptive organic layer in reaction to exposure light and a photosensitive composition.    
     
     
         32 . The method of manufacturing a semiconductor device according to  claim 31 , wherein a process using said first photomask is a process for forming a transistor's gate electrode.  
     
     
         33 . The method of manufacturing a semiconductor device according to  claim 31 , wherein a process using said second photomask is a process for forming a photo resist pattern used for a process of partially implanting impurities.  
     
     
         34 . A method of manufacturing a semiconductor device comprising the steps of illuminating photomasks having opaque patterns, and repeatedly conducting projection exposure for printing said patterns on a semiconductor wafer via projection optics to consecutively form specified patterns, wherein: 
 performing exposure using a first one of said photomasks having said opaque pattern comprising a photosensitive composition when patterns including a pattern narrower than a specified line width are exposed; and    performing exposure using a second one of said photomasks having said opaque pattern comprising a layered set of a photoabsorptive organic layer in reaction to exposure light and a photosensitive composition when patterns having a specified line width or wider are exposed.    
     
     
         35 . A method of manufacturing a semiconductor device comprising the steps of illuminating photomasks having opaque patterns, and repeatedly conducting projection exposure for printing said patterns on a semiconductor wafer via projection optics to consecutively form specified patterns, wherein said exposure selectively uses light with a wavelength of 200 nm or less and light with a wavelength over 200 nm; 
 an exposure using a wavelength of 200 nm or less uses a first photomask having said opaque pattern comprising a photosensitive composition; and    an exposure using a wavelength over 200 nm uses a second photomask having said opaque pattern comprising a layered set of a photoabsorptive organic layer in reaction to exposure light and a photosensitive composition.    
     
     
         36 . A method of manufacturing a semiconductor device comprising the steps of illuminating photomasks having opaque patterns, and repeatedly conducting projection exposure for printing said patterns on a semiconductor wafer via projection optics to consecutively form specified patterns, wherein 
 an exposure up to gate formation uses a photomask having said opaque pattern comprising a metal layer; and    the subsequent exposure process uses a photomask having said opaque pattern comprising a layered set of a photoabsorptive organic layer in reaction to exposure light and a photosensitive composition.    
     
     
         37 . A method of manufacturing a semiconductor device comprising the steps of using an electron beam writer for writing to fabricate a photomask comprising an opaque pattern having a resist layer as one of composing elements, using said photomask for exposure to manufacture a semiconductor device, and using said electron beam writer for direct writing to manufacture a semiconductor device.  
     
     
         38 . The method of manufacturing a semiconductor device according to  claim 37 , wherein said electron beam writer comprises a reticle loader, a reticle unloader, a wafer loader, and a wafer unloader, said photomask mounted on a pallet exclusively for photomasks and a semiconductor wafer mounted on a pallet exclusively for wafers are transported to a work chamber for various writing processes.  
     
     
         39 . A method of manufacturing a semiconductor device comprising the steps of illuminating photomasks having opaque patterns, and repeatedly conducting projection exposure for printing said patterns on a semiconductor wafer via projection optics to consecutively form specified patterns, wherein: 
 an exposure is conducted through the use of a photomask having said opaque pattern at least partially comprising a photoabsorptive organic layer in reaction to exposure light and a photosensitive composition and said exposure uses oblique illumination.    
     
     
         40 . The method of manufacturing a semiconductor device according to  claim 30 , wherein an absorbance coefficient of said organic layer against exposure light is greater than an absorbance coefficient of said photosensitive composition.