Highly efficient capacitor structures with enhanced matching properties

Abstract

The present specification discloses highly efficient capacitor structures. One embodiment of the present invention is referred to herein as a vertical parallel plate (VPP) structure. In accordance with this embodiment, a capacitor structure comprises a plurality of vertical plates. The vertical plates are substantially parallel to each other, and each vertical plate comprises multiple conducting strips. These conducting strips are substantially parallel to each other and are connected to each other by one or more vias. The vertical plates are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates, such that the first portion of the vertical plates forms a first terminal of the capacitor structure, and the second portion of the vertical plates forms a second terminal of the capacitor structure. Either slotted vias or individual vias can be used to connect the conducting strips. Another embodiment of the present invention is referred to herein as a vertical bars (VB) structure. In accordance with this embodiment of the present invention, a capacitor structure comprises a plurality of rows of vertical bars, wherein within each row, the vertical bars are parallel to each other, and each vertical bar comprises multiple conducting patches. These conducting patches are connected to each other by one or more vias. The rows of vertical bars form a first direction and a second direction, wherein the second direction is orthogonal to the first direction. In the first direction, the vertical bars are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates. The first portion of the vertical plates forms a section of the first terminal of the capacitor structure, and the second portion of the vertical plates forms a section of the second terminal of the capacitor structure. In the second direction, the vertical bars are alternately connected to each other, creating a third portion of the vertical plates and a fourth portion of the vertical plates. The third portion of the vertical plates forms a remaining section of the first terminal of the capacitor structure, and the fourth portion of the vertical plates forms a remaining section of the second terminal of the capacitor structure. Either slotted vias or individual vias can be used to connect the conducting strips.

What is claimed:  
     
         1 . A capacitor structure, comprising: 
 a plurality of vertical plates, wherein the vertical plates are substantially parallel to each other, and wherein each vertical plate comprises multiple conducting strips;    the conducting strips are substantially parallel to each other and are connected to each other by one or more vias; and    the vertical plates are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates, such that the first portion of the vertical plates forms a first terminal of the capacitor structure, and the second portion of the vertical plates forms a second terminal of the capacitor structure.    
     
     
         2 . The capacitor structure of  claim 1 , wherein slotted vias are used to connect conducting strips.  
     
     
         3 . The capacitor structure of  claim 1 , wherein individual vias are used to connect conducting strips.  
     
     
         4 . The capacitor structure of  claim 1 , wherein interleaving vias are used to connect conducting strips.  
     
     
         5 . The capacitor structure of  claim 1 , wherein the conducting strips are metal conducting strips.  
     
     
         6 . The capacitor structure of  claim 1 , wherein the conducting strips are poly-crystalline silicon strips.  
     
     
         7 . The capacitor structure of  claim 1 , wherein each vertical plate is located a predefined lateral distance from an adjacent vertical plate.  
     
     
         8 . A capacitor structure, comprising: 
 a plurality of rows of vertical bars, wherein within each row, the vertical bars are substantially parallel to each other, and each vertical bar comprises multiple conducting patches;    the conducting patches are connected to each other by one or more vias;    the rows of vertical bars form a first direction and a second direction, wherein the second direction is orthogonal to the first direction;    in the first direction, the vertical bars are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates, such that the first portion of the vertical plates forms a section of the first terminal of the capacitor structure, and the second portion of the vertical plates forms a section of the second terminal of the capacitor structure; and    in the second direction, the vertical bars are alternately connected to each other, creating a third portion of the vertical plates and a fourth portion of the vertical plates, such that the third portion of the vertical plates forms a remaining section of the first terminal of the capacitor structure, and the fourth portion of the vertical plates forms a remaining section of the second terminal of the capacitor structure.    
     
     
         9 . The capacitor structure of  claim 8 , wherein slotted vias are used to connect conducting strips.  
     
     
         10 . The capacitor structure of  claim 8 , wherein individual vias are used to connect conducting strips.  
     
     
         11 . The capacitor structure of  claim 8 , wherein the conducting strips are metal conducting strips.  
     
     
         12 . The capacitor structure of  claim 8 , wherein the conducting strips are poly-crystalline silicon strips.  
     
     
         13 . The capacitor structure of  claim 8 , wherein each vertical bar is located at a predefined lateral distance from an adjacent vertical bar.  
     
     
         14 . The capacitor structure of  claim 8 , wherein each patch has a lateral size and the lateral size affects the effective series resistance of the capacitor structure.  
     
     
         15 . The capacitor structure of claims  8 , wherein each patch has a lateral size and the lateral size affects the quality factor of the capacitor structure.  
     
     
         16 . A capacitor structure, comprising: 
 in a first direction, a first layer comprising, 
 a plurality of first layer vertical plates, wherein the first layer vertical plates are substantially parallel to each other, and wherein each first layer vertical plate comprises multiple first layer conducting strips;  
 the first layer conducting strips are substantially parallel to each other and are connected to each other by one or more first layer vias;  
 the first layer vertical plates are alternately connected to each other, creating a first portion of the first layer vertical plates and a second portion of the first layer vertical plates, such that the first portion of the first layer vertical plates forms a section of the first terminal of the capacitor structure and the second portion of the first layer vertical plates forms a section of the second terminal of the capacitor structure;  
   in a second direction, wherein the second direction is orthogonal to the first direction, a second layer comprising, 
 a plurality of second layer vertical plates, wherein the second layer vertical plates are substantially parallel to each other, and wherein each second layer vertical plate comprises multiple second layer conducting strips;  
 the second layer conducting strips are substantially parallel to each other and are connected to each other by one or more second layer vias;  
 the second layer vertical plates are alternately connected to each other, creating a first portion of the second layer vertical plates and a second portion of the second layer vertical plates, such that the first portion of the second layer vertical plates forms a remaining section of the first terminal of the capacitor structure, and the second portion of the second layer vertical plates forms a remaining section of the second terminal of the capacitor structure; and  
 whereby, the second layer is overlying the first layer in a top view.  
   
     
     
         17 . The capacitor structure of  claim 16 , wherein slotted vias are used to connect conducting strips.  
     
     
         18 . The capacitor structure of  claim 16 , wherein individual vias are used to connect conducting strips.  
     
     
         19 . The capacitor structure of  claim 16 , wherein the conducting strips are metal conducting strips.  
     
     
         20 . The capacitor structure of  claim 16 , wherein the conducting strips are poly-crystalline silicon strips.  
     
     
         21 . The capacitor structure of  claim 16 , wherein each first layer vertical plate is located a predefined lateral distance from an adjacent first layer vertical plate, and wherein each second layer vertical plate is located a predefined lateral distance from an adjacent second layer vertical plate.  
     
     
         22 . A capacitor structure, comprising: 
 more than two layers of vertical plates, wherein each layer is positioned in the following manner, 
 in a first direction, a previous layer comprising, 
 a plurality of previous layer vertical plates, wherein the previous layer vertical plates are substantially parallel to each other, and wherein each previous layer vertical plate comprises multiple previous layer conducting strips;  
 the previous layer conducting strips are substantially parallel to each other and are connected to each other by one or more previous layer vias;  
 the previous layer vertical plates are alternately connected to each other, creating a first portion of the previous layer vertical plates and a second portion of the previous layer vertical plates, such that the first portion of the previous layer vertical plates forms a section of the first terminal of the capacitor structure and the second portion of the previous layer vertical plates forms a section of the second terminal of the capacitor structure;  
 
 in a second direction, wherein the second direction is orthogonal to the first direction, a subsequent layer comprising, 
 a plurality of subsequent layer vertical plates, wherein the subsequent layer vertical plates are substantially parallel to each other, and wherein each subsequent layer vertical plate comprises multiple subsequent layer conducting strips;  
 the subsequent layer conducting strips are substantially parallel to each other and are connected to each other by one or more subsequent layer vias;  
 
   the subsequent layer vertical plates are alternately connected to each other, creating a first portion of the subsequent layer vertical plates and a second portion of the subsequent layer vertical plates, such that the first portion of the subsequent layer vertical plates forms a remaining section of the first terminal of the capacitor structure, and the second portion of the subsequent layer vertical plates forms a remaining section of the second terminal of the capacitor structure; and    whereby, the subsequent layer is overlying the previous layer in a top view.    
     
     
         23 . The capacitor structure of  claim 22 , wherein slotted vias are used to connect conducting strips.  
     
     
         24 . The capacitor structure of  claim 22 , wherein individual vias are used to connect conducting strips.  
     
     
         25 . The capacitor structure of  claim 22 , wherein the conducting strips are metal conducting strips.  
     
     
         26 . The capacitor structure of  claim 22 , wherein the conducting strips are poly-crystalline silicon strips.  
     
     
         27 . The capacitor structure of  claim 22 , wherein each first layer vertical plate is located a predefined lateral distance from an adjacent first layer vertical plate, and wherein each second layer vertical plate is located a predefined lateral distance from an adjacent second layer vertical plate.