Semiconductor device

Abstract

A semiconductor device that includes a semiconductor substrate having a main surface, the main surface including a first area formed with a high-frequency circuit element and a second area located around the first area and formed with a low-frequency circuit element. The semi-conductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the second area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the second area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.

What is claimed is:  
     
         1 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface, the main surface including a first area formed with a high-frequency circuit element and a second area located around the first area and formed with a low-frequency circuit element;    a sealing resin which covers the main surface;    a plurality of first external terminals which are formed above the second area and which are electrically connected to the high-frequency circuit element, said first external terminals protruding from the surface of the sealing resin; and    a plurality of second external terminals which are formed above the second area and which are electrically connected to the low-frequency circuit element, said second external terminals protruding from the surface of the sealing resin.    
     
     
         2 . The semiconductor device according to  claim 1 , further including, 
 first electrode pads which are formed in the first area and which are electrically connected to the high-frequency circuit element;    second electrode pads which are formed in the second area and which are electrically connected to the low-frequency circuit element;    an insulating film which is formed on the main surface so as to expose portions of the surfaces of the first electrode pads and portions of the surfaces of the second electrode pads;    first wirings which are formed on the insulating film and which electrically connect the first electrode pads to the first external terminals; and    second wirings which are formed on the insulating film and which electrically connects the second electrode pads to the second external terminals.    
     
     
         3 . The semiconductor device according to  claim 2 , wherein the first electrode pads are formed in a peripheral area of the first area.  
     
     
         4 . The semiconductor device according to  claim 3 , wherein the second area is located in a peripheral area of the semiconductor substrate.  
     
     
         5 . The semiconductor device according to  claim 1 , wherein the first external terminals and the second external terminals are substantially regularly disposed at predetermined intervals.  
     
     
         6 . The semiconductor device according to  claim 1 , wherein the high-frequency circuit element includes an inductor element.  
     
     
         7 . The semiconductor device according to  claim 1 , wherein the first external terminals and the second external terminals are formed only above the second area.  
     
     
         8 . The semiconductor device according to  claim 1 , wherein a frequency supplied to the high-frequency circuit element or a frequency processed by the high-frequency circuit element is a radio frequency.  
     
     
         9 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface, the main surface includes a first and a second areas each formed with a high-frequency circuit element and a third area located around the first and second areas and formed with a low-frequency circuit element;    a sealing resin which covers the main surface;    a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, said first external terminals protruding from the surface of the sealing resin; and    a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, said second external terminals protruding from the surface of the sealing resin.    
     
     
         10 . The semiconductor device according to  claim 9 , further including, 
 first electrode pads which are formed in the first and second areas and which are electrically connected to the high-frequency circuit element;    second electrode pads which are formed in the third area and which are electrically connected to the low-frequency circuit element;    an insulating film which is formed on the main surface so as to expose portions of the surfaces of the first electrode pads and portions of the surfaces of the second electrode pads;    first wirings which are formed on the insulating film and which electrically connect the first electrode pads to the first external terminals; and    second wirings which are formed on the insulating film and which electrically connect the second electrode pads to the second external terminals.    
     
     
         11 . The semiconductor device according to  claim 10 , wherein the first electrode pads are formed in an area around the first and second areas.  
     
     
         12 . The semiconductor device according to  claim 11 , wherein the third area is located in a peripheral area of the semiconductor substrate and is located in an area between the first and second areas.  
     
     
         13 . The semiconductor device according to  claim 12 , wherein the first external terminals are disposed above the third area.  
     
     
         14 . The semiconductor device according to  claim 9 , wherein the first external terminals and the second external terminals are substantially regularly disposed at predetermined intervals.  
     
     
         15 . The semiconductor device according to  claim 9 , wherein the high-frequency circuit element includes an inductor element.  
     
     
         16 . The semiconductor device according to  claim 10 , wherein the first external terminals and the second external terminals are formed only above the third area.  
     
     
         17 . The semiconductor device according to claims  9 , wherein a frequency supplied to the high-frequency circuit element or a frequency processed by the high-frequency circuit element is a radio frequency.  
     
     
         18 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface, the main surface includes a first and a second areas each formed with a high-frequency circuit element, a third area provided between the first area and the second area, and a fourth area located around the first, second and third areas and formed with a low-frequency circuit element;    a sealing resin which covers the main surface;    a plurality of first external terminals which are formed above the fourth area and which are electrically connected to the high-frequency circuit element, said first external terminals protruding from the surface of the sealing resin;    a plurality of second external terminals which are formed above the fourth area and which are electrically connected to the low-frequency circuit element, said second external terminals protruding from the surface of the sealing resin;    first electrode pads which are formed in the first and second areas and which are electrically connected to the high-frequency circuit element;    second electrode pads which are formed in the fourth area and which are electrically connected to the low-frequency circuit element;    an insulating film which are formed on the main surface so as to expose portions of the surfaces of the first electrode pads and portions of the surfaces of the second electrode pads;    first wirings which are formed on the insulating film and which electrically connect the first electrode pads to the first external terminals;    second wirings which are formed on the insulating film and electrically connect the second electrode pads to the second external terminals; and    an inductor element which is formed on the insulating film above the third area and which is connected between the first electrode pads in the first area and the first electrode pads in the second area.    
     
     
         19 . The semiconductor device according to  claim 18 , wherein the inductor element is formed of the same layer as the first wirings.  
     
     
         20 . The semiconductor device according to  claim 18 , wherein the first external terminals and the second external terminals are formed only above the fourth area.  
     
     
         21 . The semiconductor device according to  claim 18 , wherein a frequency supplied to the high-frequency circuit element or a frequency processed by the high-frequency circuit element is a radio frequency.  
     
     
         22 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface;    a plurality of circuit elements including an inductor element formed on the main surface;    a plurality of electrode pads formed on the main surface and respectively electrically connected to the circuit elements;    an sealing resin which covers the main surface; and    a plurality of external terminals which are formed above the main surface so as to protrude from the surface of the sealing resin, said external terminals being substantially regularly arranged at predetermined intervals except for above the inductor element.    
     
     
         23 . The semiconductor device according to  claim 22 , wherein the plurality of external terminals include first external terminals which are electrically connected to the electrode pads and second external terminals which are not connected to the electrode pads.  
     
     
         24 . The semiconductor device according to  claim 22 , wherein the electrode pads are formed in a peripheral area of the semiconductor substrate.  
     
     
         25 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface;    a plurality of circuit elements including an inductor element which is formed on the main surface;    a plurality of electrode pads which are formed on the main surface and which are electrically connected to the circuit elements;    an insulating film which is formed on the main surface so as to expose portions of the surfaces of the electrode pads;    wirings which are formed on the insulating film and which electrically connect the electrode pads to the external terminals;    an sealing resin which covers the main surface; and    a plurality of the external terminals which are formed above the main surface so as to protrude from the surface of the sealing resin, said external terminals being substantially regularly arranged at predetermined intervals except for above the inductor element and wirings.    
     
     
         26 . The semiconductor device according to  claim 25 , wherein the plurality of external terminals include first external terminals which are electrically connected to the electrode pads and second external terminals which are not connected to the electrode pads.  
     
     
         27 . The semiconductor device according to  claim 25 , wherein the electrode pads are formed in a peripheral area of the semiconductor substrate.  
     
     
         28 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface, the main surface includs a first area formed with a high-frequency circuit element and a second area located around the first area and formed with a low-frequency circuit element;    a plurality of first electrode pads which are formed in the first area and which are electrically connected to the high-frequency circuit element;    a plurality of second electrode pads which are formed in the second area and which are electrically connected to the low-frequency circuit element;    a wiring board having a first main surface opposite to the main surface of the semiconductor substrate and a second main surface opposite to the first main surface;    a plurality of first external terminals which are formed on the second main surface of the wiring board located above the second area of the semiconductor substrate, and which are electrically connected to the high-frequency circuit element;    a plurality of second external terminals which are formed on the second main surface of the wiring board located above the second area of the semiconductor substrate, and which are electrically connected to the low-frequency circuit element;    first wirings which are formed on the wiring board and which electrically connect the first electrode pads to the first external terminals; and    second wirings which are formed on the wiring board and which electrically connect the second electrode pads to the second external terminals.    
     
     
         29 . The semiconductor device according to  claim 28 , further including, 
 an sealing resin which is formed between the main surface of the semiconductor substrate and the first main surface of the wiring board;    first bump electrodes which are provided between the first electrode pads and the first wirings; and    second bump electrodes which are provided between the second electrode pads and the second wirings.    
     
     
         30 . The semiconductor device according to  claim 28 , wherein the first external terminals and the second external terminals are formed only on the second main surface of the wiring board located above the second area of the semiconductor substrate.  
     
     
         31 . The semiconductor device according to  claim 28 , wherein a frequency supplied to the high-frequency circuit element or a frequency processed by the high-frequency circuit element is a radio frequency.  
     
     
         32 . A semiconductor device, comprising: 
 a semiconductor substrate having a main surface, the main surface includes a first area formed with a high-frequency circuit element and a second area located on the periphery of the first area and formed with a low-frequency circuit element;    an sealing resin which covers the main surface;    a plurality of first external terminals which are electrically connected to the high-frequency circuit element and which are protruded from the surface of the sealing resin; and    a plurality of second external terminals which are electrically connected to the low-frequency circuit element and which are protruded from the surface of the sealing resin;    wherein the first external terminals and the second external terminals are disposed above an area excluding the first area.    
     
     
         33 . The semiconductor device according to  claim 32 , wherein the first external terminals and the second external terminals are disposed only above the second area.  
     
     
         34 . The semiconductor device according to claims  32 , wherein a frequency supplied to the high-frequency circuit element or a frequency processed by the high-frequency circuit element is a radio frequency.