Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same

Abstract

Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.

What is claimed is:  
     
         1 . Semiconductor carbon nanotubes having chemical bonds between carbon and hydrogen atoms.  
     
     
         2 . The semiconductor carbon nanotubes as claimed in  claim 1 , wherein the chemical bonds between carbon and hydrogen atoms are sp 3  hybrid bonds.  
     
     
         3 . A method for fabricating semiconductor carbon nanotubes, the method comprising: 
 heating carbon nanotubes in a vacuum;    dissociating hydrogen molecules in hydrogen gas into hydrogen atoms; and    exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms.    
     
     
         4 . The method as claimed in  claim 3 , wherein heating the carbon nanotubes in a vacuum is performed at a temperature of 100° C. or greater.  
     
     
         5 . The method as claimed in  claim 4 , wherein heating the carbon nanotubes in a vacuum is performed for 2 hours or longer.  
     
     
         6 . The method as claimed in  claim 3 , wherein dissociating the hydrogen molecules into the hydrogen atoms is performed by heating at a temperature of 1500° C. or greater.  
     
     
         7 . The method as claimed in  claim 6 , wherein dissociating the hydrogen molecules into the hydrogen atoms is performed by applying an RF or DC bias voltage.  
     
     
         8 . The method as claimed in  claim 6 , wherein dissociating the hydrogen molecules into the hydrogen atoms is performed using arc discharging.  
     
     
         9 . The method claimed in  claim 7 , wherein in forming the chemical bonds, the energy bandgap of the carbon nanotubes is controlled by varying the duration for which the carbon nanotubes are exposed to the hydrogen gas.  
     
     
         10 . The method as claimed in  claim 8 , wherein in forming the chemical bonds, the energy bandgap of the carbon nanotubes is controlled by varying the duration for which the carbon nanotubes are exposed to the hydrogen gas.  
     
     
         11 . The method as claimed in  claim 7 , wherein in forming the chemical bonds, the energy bandgap of the carbon nanotubes is controlled by varying the pressure.  
     
     
         12 . The method as claimed in  claim 8 , wherein in forming the chemical bonds, the energy bandgap of the carbon nanotubes is controlled by varying the vacuum level.  
     
     
         13 . The method as claimed in  claim 3 , wherein the chemical bonds between the carbon and hydrogen atoms are sp 3  hybrid bonds.