Compositions including a collection layer

Abstract

Systems and methods are described for compositions, apparatus and/or electronic devices. A composition, includes a composition layer defining a first surface and a second surface, the composition layer including a collection layer that is located closer to the first surface than to the second surface. An apparatus, includes a semiconductor absorber layer defining a first surface and a second surface; and an electrode layer coupled to the first surface of the semiconductor absorber layer, wherein the semiconductor absorber layer includes a collection layer that is located closer to the first surface than to the second surface. A electronic device includes a semiconductor structure for absorbing, the semiconductor structure for absorbing defining a first surface and a second surface; and an electrode structure for conducting coupled to the second surface of the semiconductor structure, where the semiconductor structure includes a collection layer that is located closer to the first surface than to the second surface.

What is claimed is:  
     
         1 . A composition, comprising: a composition layer defining a first surface and a second surface, the composition layer including a collection layer that is located closer to the first surface than to the second surface.  
     
     
         2 . The composition of  claim 1 , wherein the collection layer is located adjacent the first surface.  
     
     
         3 . The composition of  claim 1 , wherein the collection layer includes a sodium impurity containing layer  
     
     
         4 . The composition of  claim 3 , wherein the sodium impurity containing layer includes sodium containing precipitates.  
     
     
         5 . The composition of  claim 4 , wherein the sodium containing precipitates include NaInSe 2 .  
     
     
         6 . The composition of  claim 1 , wherein the collection layer includes a copper impurity containing layer.  
     
     
         7 . The composition of  claim 6 , wherein the copper impurity containing layer includes copper containing precipitates.  
     
     
         8 . The composition of  claim 7 , wherein the copper containing precipitates include Cu 2 Se.  
     
     
         9 . The composition of  claim 1 , wherein the composition layer includes a semiconductor layer.  
     
     
         10 . The composition of  claim 9 , wherein the semiconductor layer includes copper, indium and selenium.  
     
     
         11 . The composition of  claim 10 , wherein the semiconductor layer includes aluminum, gallium and sulphur.  
     
     
         12 . The composition of  claim 1 , further comprising an electrode layer coupled to the first surface of the composition layer.  
     
     
         13 . The composition of  claim 12 , wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.  
     
     
         14 . The composition of  claim 1 , further comprising a group  3  rich adhesion layer located between the composition layer and the electrode layer.  
     
     
         15 . The composition of  claim 12 , further comprising a substrate coupled to the electrode layer.  
     
     
         16 . The composition of  claim 15 , further comprising a diffusion barrier layer located between the composition layer and the substrate.  
     
     
         17 . The composition of  claim 1 , wherein the composition layer includes a residual template.  
     
     
         18 . The composition of  claim 17 , wherein the residual template is located closer to the second surface than to the first surface  
     
     
         19 . The composition of  claim 1 , further comprising a buffer layer coupled to the second surface of the composition layer.  
     
     
         20 . The composition of  claim 19 , further comprising a window layer coupled to the buffer layer.  
     
     
         21 . A photovoltaic device comprising the composition of  claim 1 .  
     
     
         22 . An electrical power generation system comprising the photovoltaic device of  claim 21 .  
     
     
         23 . An electronic device comprising the composition of  claim 1 .  
     
     
         24 . A photodiode comprising the composition of  claim 1 .  
     
     
         25 . An apparatus, comprising a semiconductor absorber layer defining a first surface and a second surface; and 
 an electrode layer coupled to the first surface of the semiconductor absorber layer,    wherein the semiconductor absorber layer includes a collection layer that is located closer to the first surface than to the second surface.    
     
     
         26 . The apparatus of  claim 1 , wherein the collection layer is located adjacent the first surface.  
     
     
         27 . The apparatus of  claim 25 , wherein the collection layer includes a sodium impurity containing layer  
     
     
         28 . The apparatus of  claim 27 , wherein the sodium impurity containing layer includes sodium containing precipitates.  
     
     
         29 . The apparatus of  claim 28 , wherein the sodium containing precipitates include NaInSe 2 .  
     
     
         30 . The apparatus of  claim 25 , wherein the collection layer includes a copper impurity containing layer.  
     
     
         31 . The apparatus of  claim 30 , wherein the copper impurity containing layer includes copper containing precipitates.  
     
     
         32 . The apparatus of  claim 31 , wherein the copper containing precipitates include Cu 2 Se.  
     
     
         33 . The apparatus of  claim 25 , wherein the semiconductor absorber layer includes copper, indium and selenium.  
     
     
         34 . The apparatus of  claim 33 , wherein the semiconductor layer includes aluminum, gallium and sulphur.  
     
     
         35 . The apparatus of  claim 25 , wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.  
     
     
         36 . The apparatus of  claim 25 , further comprising a substrate coupled to the electrode layer.  
     
     
         37 . The apparatus of  claim 25 , wherein the semiconductor absorber layer includes a residual template.  
     
     
         38 . The apparatus of  claim 37 , wherein the residual template is located closer to the second surface than to the first surface  
     
     
         39 . The apparatus of  claim 25 , further comprising a group  3  rich adhesion layer located between the semiconductor absorber layer and the electrode layer.  
     
     
         40 . The apparatus of  claim 25 , further comprising a substrate coupled to the electrode layer and a diffusion barrier layer located between the semiconductor absorber layer and the substrate.  
     
     
         41 . The apparatus of  claim 25 , further comprising a buffer layer coupled to the second surface of the semiconductor absorber layer.  
     
     
         42 . The apparatus of  claim 41 , further comprising a window layer coupled to the buffer layer.  
     
     
         43 . A photovoltaic device comprising the apparatus of  claim 25 .  
     
     
         44 . An electrical power generation system comprising the photovoltaic device of  claim 43 .  
     
     
         45 . An electronic device comprising the apparatus of  claim 25 .  
     
     
         46 . A photodiode comprising the apparatus of  claim 25 .  
     
     
         47 . A electronic device, comprising: 
 a semiconductor means for absorbing, the semiconductor means for absorbing defining a first surface and a second surface; and    an electrode means for conducting coupled to the second surface of the semiconductor means,    wherein the semiconductor means includes a collection layer that is located closer to the first surface than to the second surface.    
     
     
         48 . The electronic device of  claim 47 , wherein the collection layer is located adjacent the first surface.  
     
     
         49 . The electronic device of  claim 47 , wherein the collection layer includes a sodium impurity containing layer  
     
     
         50 . The electronic device of  claim 49 , wherein the sodium impurity containing layer includes sodium containing precipitates.  
     
     
         51 . The electronic device of  claim 50 , wherein the sodium containing precipitates include NaInSe 2 .  
     
     
         52 . The electronic device of  claim 47 , wherein the collection layer includes a copper impurity containing layer.  
     
     
         53 . The electronic device of  claim 52 , wherein the copper impurity containing layer includes copper containing precipitates.  
     
     
         54 . The electronic device of  claim 53 , wherein the copper containing precipitates include Cu 2 Se.  
     
     
         55 . The electronic device of  claim 47 , wherein the semiconductor means includes copper, indium and selenium.  
     
     
         56 . The electronic device of  claim 55 , wherein the semiconductor means includes aluminum, gallium and sulphur.  
     
     
         57 . The electronic device of  claim 47 , wherein the electrode means includes at least one metal selected from the group consisting of Mo and Ti.  
     
     
         58 . The electronic device of  claim 47 , further comprising a means for providing a substrate coupled to the electrode means.  
     
     
         59 . The electronic device of  claim 58 , further comprising a barrier means for inhibiting diffusion located between the semiconductor means and the means for providing a substrate.  
     
     
         60 . The electronic device of  claim 47 , wherein the semiconductor means for absorbing includes a residual template.  
     
     
         61 . The electronic device of  claim 60 , wherein the residual template is located closer to the second surface than to the first surface  
     
     
         62 . The electronic device of  claim 47 , further comprising a group  3  rich means for adhering located between the semiconductor means and the electrode means.  
     
     
         63 . The electronic device of  claim 47 , further comprising a means for defining a semiconductor junction coupled to the composition layer.  
     
     
         64 . The electronic device of  claim 63 , further comprising an optically transmitting means for providing lateral conductivity coupled to the means for defining a semiconductor junction.  
     
     
         65 . A photovoltaic device comprising the electronic device of  claim 47   
     
     
         66 . An electrical power generation system comprising the photovoltaic device of  claim 65 .  
     
     
         67 . A photodiode comprising the electronic device of  claim 47.