Process for producing semiconductor article

Abstract

A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

What is claimed is:  
     
         1 . A process for producing a semiconductor article comprising bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.  
     
     
         2 . The process for producing a semiconductor article according to  claim 1 , wherein the film is comprised of a resin film.  
     
     
         3 . The process for producing a semiconductor article according to  claim 1 , wherein the film is comprised of an electroconductive film.  
     
     
         4 . The process for producing a semiconductor article according to  claim 1 , wherein the film is adherent.  
     
     
         5 . The process for producing a semiconductor article according to  claim 1 , wherein the film is bonded with interposition of an adhesive to the substrate.  
     
     
         6 . The process for producing a semiconductor article according to  claim 1 , wherein the film has a thickness ranging from 5 μm to 3 cm.  
     
     
         7 . The process for producing a semiconductor article according to  claim 6 , wherein the film has a thickness ranging from 10 μm to 1 cm.  
     
     
         8 . The process for producing a semiconductor article according to  claim 1 , wherein the substrate is prepared by making partially porous a single crystal silicon substrate.  
     
     
         9 . The process for producing a semiconductor article according to  claim 8 , wherein the substrate is made porous by anodization.  
     
     
         10 . The process for producing a semiconductor article according to  claim 1 , wherein another porous semiconductor layer is formed on the substrate after removal of the porous layer remaining on the side of the substrate after the separation of the film, and another film is bonded again to the substrate.  
     
     
         11 . A semiconductor article produced according to the process set forth in  claims 1  to  10 .  
     
     
         12 . A process for producing a semiconductor article comprising bonding a film onto a first substrate having a porous semiconductor layer and a nonporous semiconductor layer, and separating the nonporous semiconductor layer from the first substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.  
     
     
         13 . The process for producing a semiconductor article according to  claim 12 , wherein the film is comprised of a resin film.  
     
     
         14 . The process for producing a semiconductor article according to  claim 12 , wherein the film is comprised of an electroconductive film.  
     
     
         15 . The process for producing a semiconductor article according to  claim 12 , wherein the film is adherent.  
     
     
         16 . The process for producing a semiconductor article according to  claim 12 , wherein the film is bonded with interposition of an adhesive to the substrate.  
     
     
         17 . The process for producing a semiconductor article according to  claim 12 , wherein the film has a thickness ranging from 5 μm to 3 cm.  
     
     
         18 . The process for producing a semiconductor article according to  claim 17 , wherein the film has a thickness ranging from 10 μm to 1 cm.  
     
     
         19 . The process for producing a semiconductor article according to  claim 12 , wherein the first substrate is formed from a silicon substrate.  
     
     
         20 . The process for producing a semiconductor article according to  claim 19 , wherein the silicon substrate is a single crystal silicon substrate.  
     
     
         21 . The process for producing a semiconductor article according to  claim 20 , wherein the first substrate is prepared by making partially porous the single crystal silicon substrate to form the porous semiconductor layer, and forming the nonporous semiconductor layer on the porous semiconductor layer.  
     
     
         22 . The process for producing a semiconductor article according to  claim 21 , wherein the nonporous semiconductor layer is formed from silicon.  
     
     
         23 . The process for producing a semiconductor article according to  claim 21 , wherein the nonporous semiconductor layer is formed from a compound semiconductor.  
     
     
         24 . The process for producing a semiconductor article according to  claim 21 , wherein the nonporous semiconductor layer is formed by epitaxial growth.  
     
     
         25 . The process for producing a semiconductor article according to  claim 20 , wherein the first substrate is formed by implanting ions into the interior of the single crystal silicon substrate to form the porous layer in the interior with the ion implantation surface kept nonporous.  
     
     
         26 . The process for producing a semiconductor article according to  claim 25 , wherein the ions are selected from the group of ions of rare gases, hydrogen, and nitrogen.  
     
     
         27 . The process for producing a semiconductor article according to  claim 25 , wherein an insulation layer is formed on the single crystal silicon substrate, and the ions are implanted from the side of the insulation layer.  
     
     
         28 . The process for producing a semiconductor article according to  claim 12 , wherein the porous layer is formed by anodization.  
     
     
         29 . The process for producing a semiconductor article according to  claim 28 , wherein the porous layer is formed in a multiple layer structure by changing the electric current density during the anodization to change the porosity of the porous layer.  
     
     
         30 . A process for producing a semiconductor article according to  claim 12 , which is applied to production of a solar cell.  
     
     
         31 . The process for producing a semiconductor article according to  claim 30 , comprising steps of preparing the first substrate by forming the porous semiconductor layer by making the silicon substrate porous partially, and forming the nonporous semiconductor layer on the porous semiconductor layer; bonding the film onto the nonporous semiconductor layer; and separating the nonporous semiconductor layer by applying a force in a direction of peeling the film from the first substrate.  
     
     
         32 . The process for producing a semiconductor article according to  claim 31 , wherein the substrate obtained by removal of the porous semiconductor layer remaining on the first substrate after the separation step is reused as the material of the first substrate.  
     
     
         33 . The process for producing a semiconductor article according to  claim 31 , wherein a semiconductor junction is formed, after the separation of the layers, on the nonporous semiconductor layer bared by removal of the porous semiconductor layer remaining on the film side.  
     
     
         34 . The process for producing a semiconductor article according to  claim 31 , wherein a semiconductor junction is formed in the step of forming the nonporous semiconductor layer on the porous semiconductor layer.  
     
     
         35 . The process for producing a semiconductor article according to  claim 31 , wherein both the front face and the reverse face of the silicon substrate are made porous, and the subsequent steps are conducted on both of the faces.  
     
     
         36 . The process for producing a semiconductor article according to  claim 31 , wherein the silicon substrate is comprised of single crystal silicon.  
     
     
         37 . The process for producing a semiconductor article according to  claim 31 , wherein the silicon substrate is comprised of polycrystal silicon.  
     
     
         38 . The process for producing a semiconductor article according to  claim 31 , wherein the silicon substrate is comprised of metallurgical grade silicon.  
     
     
         39 . The process for producing a semiconductor article according to  claim 31 , wherein silicon is used as the nonporous semiconductor layer.  
     
     
         40 . The process for producing a semiconductor article according to  claim 31 , wherein a compound semiconductor is used as the nonporous semiconductor layer.  
     
     
         41 . The process for producing a semiconductor article according to  claim 31 , wherein a heat-resistant film is used as the film.  
     
     
         42 . The process for producing a semiconductor article according to  claim 41 , wherein the film is heat-resistant at a temperature of not higher than 400° C.  
     
     
         43 . The process for producing a semiconductor article according to  claim 31 , wherein the heat-resistant film is a high polymer film.  
     
     
         44 . The process for producing a semiconductor article according to  claim 31 , wherein the nonporous semiconductor and the film is bonded with interposition of an electroconductive paste.  
     
     
         45 . The process for producing a semiconductor article according to  claim 44 , wherein the electroconductive paste is fired.  
     
     
         46 . A semiconductor article, produced by the process set forth in  claims 12  to  45 .  
     
     
         47 . A process for producing a semiconductor article, comprising bonding a film onto a first substrate having a porous semiconductor layer and a nonporous semiconductor layer, separating the nonporous semiconductor layer from the first substrate at the porous semiconductor layer by applying a force to the film in a peeling direction, and bonding the separated nonporous semiconductor layer onto a second substrate.  
     
     
         48 . The process for producing a semiconductor article according to  claim 47 , wherein the film is comprised of a resin film.  
     
     
         49 . The process for producing a semiconductor article according to  claim 47 , wherein the film is comprised of an electroconductive film.  
     
     
         50 . The process for producing a semiconductor article according to  claim 47 , wherein the film is adherent.  
     
     
         51 . The process for producing a semiconductor article according to  claim 47 , wherein the film is bonded with interposition of an adhesive to the substrate.  
     
     
         52 . The process for producing a semiconductor article according to  claim 47 , wherein the film has a thickness ranging from 5 μm to 3 cm.  
     
     
         53 . The process for producing a semiconductor article according to  claim 52 , wherein the film has a thickness ranging from 10 μm to 1 cm.  
     
     
         54 . The process for producing a semiconductor article according to  claim 47 , wherein the first substrate is formed from a silicon substrate.  
     
     
         55 . The process for producing a semiconductor article according to  claim 54 , wherein the silicon substrate is a single crystal silicon substrate.  
     
     
         56 . The process for producing a semiconductor article according to  claim 55 , wherein the first substrate is prepared by making partially porous the single crystal silicon substrate to form the porous semiconductor layer, and forming the nonporous semiconductor layer on the porous semiconductor layer.  
     
     
         57 . The process for producing a semiconductor article according to  claim 56 , wherein the nonporous semiconductor layer is formed from silicon.  
     
     
         58 . The process for producing a semiconductor article according to  claim 56 , wherein the nonporous semiconductor layer is formed from a compound semiconductor.  
     
     
         59 . The process for producing a semiconductor article according to  claim 56 , wherein the nonporous semiconductor layer is formed by epitaxial growth.  
     
     
         60 . The process for producing a semiconductor article according to  claim 56 , wherein an insulation layer is formed on the surface of the nonporous semiconductor layer, and the film is bonded to the surface of the insulation layer.  
     
     
         61 . The process for producing a semiconductor article according to  claim 55 , wherein the first substrate is formed by implanting ions into the interior of the single crystal silicon substrate to form the porous layer in the interior with the ion implantation surface kept nonporous.  
     
     
         62 . The process for producing a semiconductor article according to  claim 61 , wherein the ions are selected from the group of ions of rare gases, hydrogen, and nitrogen.  
     
     
         63 . The process for producing a semiconductor article according to  claim 61 , wherein an insulation layer is formed on the single crystal silicon substrate, and the ions are implanted from the side of the insulation layer.  
     
     
         64 . The process for producing a semiconductor article according to  claim 63 , wherein the film is bonded to the insulation layer.  
     
     
         65 . The process for producing a semiconductor article according to  claim 47 , wherein a silicon substrate is used as the second substrate.  
     
     
         66 . The process for producing a semiconductor article according to  claim 65 , wherein a silicon substrate having an insulation layer formed thereon is used as the second substrate.  
     
     
         67 . The process for producing a semiconductor article according to  claim 47 , wherein a light-transmissive substrate is used as the second substrate.  
     
     
         68 . The process for producing a semiconductor article according to  claim 47 , wherein the nonporous semiconductor layer on the separated film is bonded to a supporting member, and further bonded to the second substrate with the supporting member kept bonded.  
     
     
         69 . The process for producing a semiconductor article according to  claim 68 , wherein the nonporous layer which is held on the separated film and bared by removal of the remaining porous layer from the surface of the nonporous layer is bonded to the supporting member.  
     
     
         70 . The process for producing a semiconductor article according to  claim 68 , wherein the porous layer remaining on the surface of the nonporous layer on the separated film is bonded to the supporting member.  
     
     
         71 . The process for producing a semiconductor article according to  claim 68 , wherein the supporting member is removed after the bonding of the nonporous semiconductor layer onto the second substrate.  
     
     
         72 . The process for producing a semiconductor article according to  claim 47 , wherein the film is removed after the nonporous layer is bonded to the second substrate.  
     
     
         73 . The process for producing a semiconductor article according to  claim 56 , wherein the porous layer is formed by anodization.  
     
     
         74 . The process for producing a semiconductor article according to  claim 73 , wherein the porous layer is formed in a multiple layer structure by changing the electric current density during the anodization to change the porosity of the porous layer.  
     
     
         75 . The process for producing a semiconductor article according to  claim 56 , wherein both the front face and the reverse face of the silicon substrate are made porous, and the subsequent steps are conducted on both of the faces.  
     
     
         76 . The process for producing a semiconductor article according to  claim 47 , wherein the substrate obtained by removal of the porous semiconductor layer remaining on the first substrate after the separation step is reused as the material for the first substrate.  
     
     
         77 . The process for producing a semiconductor article according to  claim 47 , wherein the substrate obtained by removal of the porous semiconductor layer remaining on the first substrate after the separation step is reused as the material for the second substrate.  
     
     
         78 . A semiconductor article, produced by the process set forth in  claims 47  to  77 .