Resist developer and resist pattern formation method using same

Abstract

A resist developer capable of forming a high resolution resist pattern with good shape and little film thinning is provided, together with a resist pattern formation method using such a developer. The resist developer is an aqueous solution comprising an ammonium hydroxide represented by a general formula (I): R 1 n R 2 4−n N + .OH − wherein R 1 is a lower alkyl group in which the number of carbon atoms is A, R 2 is a lower alkyl group in which the number of carbon atoms is B, A<B, and n is an integer from 1 to 3.

What is claimed is:  
     
         1 . A resist developer formed from an aqueous solution comprising an ammonium hydroxide represented by a general formula (I) shown below:  
       R 1   n R 2   4−n N + .OH −   (I)  
       (wherein, R 1  is a lower alkyl group in which a number of carbon atoms is A, R 2  is a lower alkyl group in which a number of carbon atoms is B, A<B, and n is an integer from 1 to 3):  
     
     
         2 . A resist developer according to  claim 1 , wherein n is 3.  
     
     
         3 . A resist developer according to  claim 1 , wherein a concentration of said ammonium hydroxide in said aqueous solution is within a range from 1 to 5 mass %.  
     
     
         4 . A resist developer according to  claim 1 , wherein R 1  is a methyl group and R 2  is an ethyl group.  
     
     
         5 . A resist pattern formation method, wherein following exposure of a resist layer provided on a substrate, development is conducted using a resist developer according to  claim 1 .  
     
     
         6 . A resist pattern formation method, wherein following exposure of a resist layer provided on a substrate, development is conducted using a resist developer according to  claim 2 .  
     
     
         7 . A resist pattern formation method, wherein following exposure of a resist layer provided on a substrate, development is conducted using a resist developer according to  claim 3 .  
     
     
         8 . A resist pattern formation method, wherein following exposure of a resist layer provided on a substrate, development is conducted using a resist developer according to  claim 4 .  
     
     
         9 . A resist pattern formation method according to  claim 5 , wherein said resist layer is formed from a chemically amplified positive resist.  
     
     
         10 . A resist pattern formation method according to  claim 6 , wherein said resist layer is a layer formed by using at least one of prebaking at 80 to 100° C., and post exposure baking (PEB) at 80 to 120° C.  
     
     
         11 . A resist pattern formation method according to  claim 6 , wherein said chemically amplified positive resist comprises a resin with chain type alkoxyalkyl groups as acid dissociable, dissolution inhibiting groups, as a base resin, and a bis-sulfonyl diazomethane as an acid generator.  
     
     
         12 . A resist pattern formation method according to  claim 7 , wherein said chemically amplified positive resist comprises a resin with chain type alkoxyalkyl groups as acid dissociable, dissolution inhibiting groups, as a base resin, and a bis-sulfonyl diazomethane as an acid generator.  
     
     
         13 . A resist pattern formation method according to  claim 8 , wherein said acid generator is a bis-alkylsulfonyl diazomethane.  
     
     
         14 . A resist pattern formation method according to  claim 9 , wherein said acid generator is a bis-alkylsulfonyl diazomethane.  
     
     
         15 . A resist pattern formation method according to  claim 10 , wherein said acid generator is bis(cyclohexylsulfonyl)diazomethane.  
     
     
         16 . A resist pattern formation method according to  claim 11 , wherein said acid generator is bis(cyclohexylsulfonyl)diazomethane.