Epoxy resin molding material for sealing

Abstract

An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, and semiconductor devices encapsulated therein. The encapsulating epoxy resin molding material for thin semiconductor devices according to this invention is excellent in fluidity, and the semiconductor device encapsulated therein, which is a semiconductor device having a semiconductor chip arranged on a thin, multi-pin, long wire, narrow-pad-pitch, or on a mounted substrate such as organic substrate or organic film, is free of molding defects such as wire sweep, voids etc. as shown in the Examples, and thus its industrial value is significant.

1 . An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, wherein a disk flow is 80 mm or more.  
     
     
         2 . An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, wherein the encapsulating epoxy resin molding material is used for the semiconductor device having at least one of the following constitutions (a) to (f): 
 (a) at least one of an encapsulating material of an upper side of a semiconductor chip and an encapsulating material of a lower side of the semiconductor chip has a thickness 0.7 mm or less;    (b) the pin count is 80 or more;    (c) the length of the wire is 2 mm or more;    (d) the pad pitch on the semiconductor chip is 90 μm or less;    (e) the thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is 2 mm or less;    (f) the area of the semiconductor chip is 25 mm 2  or more.    
     
     
         3 . The encapsulating epoxy resin molding material described in  claim 2 , wherein the disk flow is 80 mm or more.  
     
     
         4 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  3 , which further comprises (E) an inorganic filler.  
     
     
         5 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  4 , which further comprises (F) a curing accelerator.  
     
     
         6 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  5 , wherein the semiconductor device is a stacked type package.  
     
     
         7 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  6 , wherein the semiconductor device is a mold array package.  
     
     
         8 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  7 , wherein the melt viscosity of the epoxy resin (A) at 150° C. is 2 poises or less.  
     
     
         9 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  8 , wherein the epoxy resin (A) comprises at least one member of: 
 a biphenyl type epoxy resin represented by the general formula (I):  
                     
 wherein R 1  to R 4  may be the same or different and are selected from a hydrogen atom and a C 1-10  substituted or unsubstituted monovalent hydrocarbon group, and n is an integer of 0 to 3,  
 a bisphenol F type epoxy resin represented by the general formula (II):  
                     
 wherein R 1  to R 8  may be the same or different and are selected from a hydrogen atom, a C 1-10  alkyl group, a C 1-10  alkoxy group, a C 6-10  aryl group, and a C 6-10  aralkyl group, and n is an integer of 0 to 3, and  
 a stilbene type epoxy resin represented by the general formula (III):  
                     
 wherein R 1  to R 8  may be the same or different and are selected from a hydrogen atom, a C 1-10  alkyl group, a C 1-10  alkoxy group, a C 6-10  aryl group and a C 6-10  aralkyl group, and n is an integer of 0 to 3.  
 
     
     
         10 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  9 , wherein the melt viscosity of the curing agent (B) at 150° C. is 2 poises or less.  
     
     
         11 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  10 , wherein the curing resin (B) comprises: 
 a phenol-aralkyl resin represented by the general formula (IV):  
                     
 wherein R is selected from a hydrogen atom and a C 1-10  substituted or unsubstituted monovalent hydrocarbon group, and n is an integer of 0 to 10, and/or  
 a biphenyl type phenol resin represented by the general formula (V):  
                     
 wherein R 1  to R 9  may be the same or different and are selected from a hydrogen atom, a C 1-10  alkyl group, a C 1-10  alkoxy group, a C 6-10  aryl group and a C 6-10  aralkyl group, and n is an integer of 0 to 10.  
 
     
     
         12 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  11 , wherein the silane coupling agent having a secondary amino group (C) comprises a compound represented by the general formula (VI):  
       
         
           
           
               
               
           
         
       
       wherein R 1  is selected from a hydrogen atom, a C 1-6  alkyl group and a C 1-2  alkoxy group, R 2  is selected from a C 1-6  alkyl group and a phenyl group, R 3  represents methyl or ethyl group, n is an integer of 1 to 6, and m is an integer of 1 to 3.  
     
     
         13 . The encapsulating epoxy resin molding material described in any one of  claims 1  to  11 , wherein the phosphate (D) comprises a compound represented by the general formula (X):  
       
         
           
           
               
               
           
         
       
       wherein eight R groups may be the same or different and represent a C 1-4  alkyl group, and Ar represents an aromatic group.  
     
     
         14 . A semiconductor device encapsulated in the encapsulating epoxy resin molding material described in any one of  claims 1  to  13 .  
     
     
         15 . The semiconductor device described in the  claim 14 , having at least one of the following constitutions (a) to (f): 
 (a) at least one of an encapsulating material of an upper side of a semiconductor chip and an encapsulating material of a lower side of the semiconductor chip has a thickness 0.7 mm or less;    (b) the pin count is 80 or more;    (c) the length of the wire is 2 mm or more;    (d) the pad pitch on the semiconductor chip is 90 μm or less;    (e) the thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is 2 mm or less;    (f) the area of the semiconductor chip is 25 mm 2  or more.