Highly efficient remote clean process for process chambers in deposition tools

Abstract

In a method of cleaning a deposition process chamber, a remotely generated activated gas is supplied to the process chamber, in which, depending on the type of excitation means used, a specified chamber pressure in combination with a two-step clean process allows one to significantly reduce nitrogen fluoride (NF 3 ) consumption and increase throughput.

What is claimed:  
     
         1 . A method of cleaning a deposition process chamber after depositing a silicon-containing dielectric layer on a substrate, the deposition process chamber including a first plate and a second plate, the second plate being movable to adjust the distance between the first plate and the second plate, wherein a plurality of lift pins are movably coupled to the second plate, the lift pins having a first position so as to be partially exposed and a second position wherein said pins are not exposed above a surface of the second plate, the method comprising: 
 generating, in a remote plasma source, an activated clean gas from a precursor gas including argon and nitrogen fluoride (NF 3 );    supplying the activated clean gas to the process chamber;    maintaining a pressure in said chamber in the range of approximately 3.0-3.5 Torr;    (positioning, for a first time period, the second plate at a predetermined distance from the first plate with the lift pins in the second position; and    positioning the lift pins in the first position for a second time period, wherein the second time period is shorter then the first time period.    
     
     
         2 . The method of  claim 1 , wherein said pressure is maintained at approximately 3.3 Torr.  
     
     
         3 . The method of  claim 1 , wherein said predetermined distance is in the range of approximately 600-700 mil (15.24-17.78 mm).  
     
     
         4 . The method of  claim 3 , wherein said predetermined distance is approximately 650 mil (16.51 mm).  
     
     
         5 . The method of  claim 1 , wherein said argon gas is supplied with a flow rate of approximately 3000-4000 sccm.  
     
     
         6 . The method of  claim 5 , wherein said argon flow rate is approximately 3600 sccm.  
     
     
         7 . The method of  claim 1 , wherein said nitrogen fluoride (NF 3 ) is supplied with a flow rate of approximately 1200-1600 sccm.  
     
     
         8 . The method of  claim 7 , wherein said nitrogen fluoride (NF 3 ) flow rate is approximately 1400 sccm.  
     
     
         9 . The method of  claim 1 , wherein a temperature of the second plate is maintained at approximately 350-450° C.  
     
     
         10 . The method of  claim 9 , wherein said temperature is maintained at approximately 400° C.  
     
     
         11 . The method of  claim 1 , wherein said silicon-containing dielectric layer is deposited by using TEOS.  
     
     
         12 . The method of  claim 11 , wherein said deposition process chamber is a part of an Applied Materials Producer™ system.  
     
     
         13 . A method of cleaning a deposition process chamber after depositing a silicon-containing dielectric layer on a substrate, the deposition process chamber including a first plate and a second plate, the second plate being movable to adjust a distance between the first plate and the second plate, wherein a plurality of lift pins is movably coupled to the second plate, the lift pins having a first position so as to be partially exposed and a second position so as to be counter-sunk with respect to the second plate, the method comprising: 
 generating an activated clean gas by microwave excitation from a precursor gas including nitrogen fluoride (NF 3 );  
 supplying the activated clean gas to the process chamber;  
 maintaining a pressure in the process chamber within the range of approximately 2.53-3.0 Torr;  
 positioning, for a first time period, the second plate at a predefined distance from the first plate with the lift pins in the second position; and  
 positioning the lift pins in the first position for a second time period, wherein the second time period is shorter than the first time period.  
 
     
     
         14 . The method of  claim 13 , wherein said pressure is maintained at approximately 2.7 Torr.  
     
     
         15 . The method of  claim 13 , wherein said predetermined distance is in the range of approximately 600-700 mil (15.24-17.78 mm).  
     
     
         16 . The method of  claim 15 , wherein said predetermined distance is approximately 650 mil (16.51 mm).  
     
     
         17 . The method of  claim 13 , wherein a flow rate in supplying said nitrogen fluoride (NF 3 ) precursor gas is in the range of approximately 1200-1600 sccm.  
     
     
         18 . The method of  claim 17 , wherein said nitrogen fluoride (NF 3 ) flow rate is approximately 1400 sccm.  
     
     
         19 . The method of  claim 13 , wherein a temperature of the second plate is in the range of approximately 350-450° C.  
     
     
         20 . The method of  claim 19 , wherein said temperature is approximately 400° C.  
     
     
         21 . The method of  claim 13 , wherein said deposition process chamber is a process chamber for plasma enhanced chemical vapor deposition.  
     
     
         22 . The method of  claim 13 , wherein said silicon-containing dielectric layer is deposited by using TEOS.  
     
     
         23 . The method of  claim 13 , wherein said deposition process chamber is a part of an Applied Materials Producer™ system.  
     
     
         24 . A method of cleaning a deposition process chamber after depositing a silicon-containing dielectric layer on a substrate, the deposition process chamber including a first plate and a second plate, the second plate being movable to adjust the distance between the first plate and the second plate, wherein a plurality of lift pins are movably coupled to the second plate, the lift pins having a first position so as to be partially exposed and a second position wherein said pins are substantially not exposed above a surface of the second plate, the method comprising: 
 generating, in a remote plasma source, an activated clean gas from a precursor gas including argon and nitrogen fluoride (NF 3 );    supplying the activated clean gas to the process chamber;    maintaining a pressure in said chamber in the range of approximately 2.0-4.0 Torr;    positioning, for a first time period, the second plate at a distance from the first plate suitable for depositing the dielectric layer with the lift pins in the second position; and    positioning the lift pins in the first position for a second time period, wherein the second time period is shorter then the first time period.    
     
     
         25 . The method of  claim 24 , wherein said distance is in the range of approximately 600-700 mil (15.24-17.78 mm).  
     
     
         26 . The method of  claim 25 , wherein said predetermined distance is approximately 650 mil (16.51 mm).  
     
     
         27 . The method of  claim 24 , wherein said argon gas is supplied with a flow rate of approximately 3000-4000 sccm.  
     
     
         28 . The method of  claim 24 , wherein said argon flow rate is approximately 3600 sccm.  
     
     
         29 . The method of  claim 24 , wherein said nitrogen fluoride (NF 3 ) is supplied with a flow rate of approximately 1200-1600 sccm.  
     
     
         30 . The method of  claim 29 , wherein said nitrogen fluoride (NF 3 ) flow rate is approximately 1400 sccm.  
     
     
         31 . The method of  claim 24 , wherein a temperature of the second plate is maintained at approximately 350-450° C.  
     
     
         32 . The method of  claim 24 , wherein said silicon-containing dielectric layer is deposited by using TEOS.  
     
     
         33 . The method of  claim 24 , wherein said position process chamber is a part of an Applied Materials Producer™ system.  
     
     
         34 . A method of cleaning a deposition process chamber after depositing a silicon-containing dielectric layer on a substrate, the deposition process chamber including a first plate and a second plate, the second plate being movable to adjust a distance between the first plate and the second plate, wherein a plurality of lift pins is movably coupled to the second plate, the lift pins having a first position so as to be partially exposed and a second position so as to be counter-sunk with respect to the second plate, the method comprising: generating an activated clean gas by microwave excitation from a precursor gas including nitrogen fluoride (NF 3 ); 
 supplying the activated clean gas to the process chamber;    maintaining a pressure in the process chamber within the range of approximately 2.0-4.0 Torr;    positioning, for a first time period, the second plate at a distance from the first plate suitable to deposit the dielectric layer with the lift pins in the second position; and    positioning the lift pins in the first position for a second time period, wherein the second time period is shorter than the first time period.    
     
     
         35 . The method of  claim 34 , wherein said pressure is maintained at approximately 2.7 Torr.  
     
     
         36 . The method of  claim 34 , wherein said distance is in the range of approximately 600-700 mil (15.24-17.78 mm).  
     
     
         37 . The method of  claim 36 , wherein said distance is approximately 650 mil (16.51 mm).  
     
     
         38 . The method of  claim 34 , wherein a flow rate in supplying said nitrogen fluoride (NF 3 ) precursor gas is in the range of approximately 1200-1600 sccm.  
     
     
         39 . The method of  claim 34 , wherein said nitrogen fluoride (NF 3 ) flow rate is approximately 1400 sccm.  
     
     
         40 . The method of  claim 34 , wherein a temperature of the second plate is in the range of approximately 350-450° C.  
     
     
         41 . The method of  claim 40 , wherein said temperature is approximately 400° C.  
     
     
         42 . The method of  claim 34 , wherein said deposition process chamber is a process chamber for plasma enhanced chemical vapor deposition.  
     
     
         43 . The method of  claim 34 , wherein said silicon-containing dielectric layer is deposited by using TEOS.  
     
     
         44 . The method of  claim 34 , wherein said deposition process chamber is a part of an Applied Materials Producer™ system.