US2003199144A1PendingUtilityA1

Mask, method of manufacturing a mask, method of manufacturing an organic electroluminescence device, and organic electroluminescence device

Assignee: SEIKO EPSON CORPPriority: Jan 26, 2001Filed: May 6, 2003Published: Oct 23, 2003
Est. expiryJan 26, 2021(expired)· nominal 20-yr term from priority
H10P 76/405H10P 76/4085C23C 14/12H10K 71/166C23C 14/042H10K 59/12
42
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A mask is disclosed for use in forming a thin-layer pattern of an organic electroluminescence element having high-precision pixels. The mask is manufactured by wet-etching a (100) silicon wafer (single crystal silicon substrate) 1 in a crystal orientation-dependent anisotropic fashion so as to form through-holes 11 having (111)-oriented walls 11 a serving as apertures corresponding to a thin-layer pattern to be formed.

Claims

exact text as granted — not AI-modified
1 . A mask for use in manufacturing a thin-layer pattern serving as a layer of an organic electroluminescence element by means of vacuum evaporation, the mask having an aperture corresponding to the thin-layer pattern, the mask being formed of single crystal silicon and having a through-hole serving as the aperture formed by means of anisotropic wet etching using a crystal orientation dependence.

Join the waitlist — get patent alerts

Track US2003199144A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.