Semiconductor device, manufacturing method thereof, and semiconductor manufacturing system

Abstract

A semiconductor manufacturing system of the present invention includes exposure value detection means for detecting an exposure value, pattern size detection means for detecting a pattern size, size comparison means for calculating a size difference between the pattern size and a target value, optimum exposure value calculation means for calculating an optimum exposure value based on the exposure value and the size difference, and an exposure value control means. In the semiconductor device manufacturing method of the present invention, the optimum exposure value is calculated based on the exposure value and the size difference, and exposure is performed at the optimum exposure value. A semiconductor device of the present invention is manufactured by the manufacturing method.

What is claimed is:  
     
         1 . A semiconductor manufacturing system, comprising: 
 exposure value detection means for detecting an exposure value of an exposure device;    pattern size detection means for detecting a size of a pattern formed after photolithography;    size comparison means for comparing the size of the pattern detected by said pattern size detection means and a target value to calculate a size difference;    optimum exposure value calculation means for calculating an optimum exposure value by using said size difference and said exposure value; and    exposure value control means for controlling the exposure value of said exposure device so as to be the optimum exposure value calculated by said optimum exposure value calculation means.    
     
     
         2 . The semiconductor manufacturing system according to  claim 1 , wherein said optimum exposure value calculation means calculates said optimum exposure value by adding a product of a conversion coefficient for said pattern by said size difference to said exposure value.  
     
     
         3 . The semiconductor manufacturing system according to  claim 2 , wherein a plurality of said patterns are formed, and 
 said optimum exposure value calculation means calculates a product of said conversion coefficient by said size difference for each of said patterns, and has at least one operation means selected from the group of first operation means for finding an average value of said products for said patterns, second operation means for selecting a central value of said products for said patterns when the products are arranged in order of magnitude, and third operation means for multiplying said products for said patterns by coefficients according to said patterns, adding them together and dividing the result by a sum of said coefficients.    
     
     
         4 . The semiconductor manufacturing system according to  claim 1 , wherein a plurality of said patterns are formed, further comprising 
 pattern selection means for selecting a desired one of said patterns among said plurality of patterns.    
     
     
         5 . The semiconductor manufacturing system according to  claim 1 , wherein said pattern is a developed pattern formed by development, and 
 said size comparison means compares a size of said developed pattern and a target value to calculate a size difference.    
     
     
         6 . The semiconductor manufacturing system according to  claim 1 , wherein said pattern is an etched pattern formed by etching, and 
 said size comparison means compares a size of said etched pattern and a target value to calculate a size difference.    
     
     
         7 . The semiconductor manufacturing system according to  claim 1 , comprising data storage means for storing said exposure value, said pattern size, said size difference and said optimum exposure value.  
     
     
         8 . A semiconductor device manufacturing method, comprising the steps of: 
 applying a photosensitive material;    exposing said photosensitive material by an exposure device;    detecting an exposure value of said exposure device;    developing said photosensitive material;    detecting a size of a pattern formed after said development;    comparing the detected size of said pattern and a target value to calculate a size difference;    calculating an optimum exposure value by using said size difference and said exposure value; and    controlling the exposure value of said exposure device so as to be said optimum exposure value.    
     
     
         9 . The semiconductor device manufacturing method according to  claim 8 , wherein said optimum exposure value is calculated by adding a product of a conversion coefficient for said pattern by said size difference to said exposure value.  
     
     
         10 . The semiconductor device manufacturing method according to  claim 9 , wherein a plurality of said patterns are formed, and 
 an average value of said products for said patterns is used as the product of said conversion coefficient by said size difference.    
     
     
         11 . The semiconductor device manufacturing method according to  claim 9 , wherein a plurality of said patterns are formed, and 
 a central value of said products for said patterns when said products are arranged in order of magnitude is selected as the product of said conversion coefficient by said size difference.    
     
     
         12 . The semiconductor device manufacturing method according to  claim 9 , wherein a plurality of said patterns are formed, and 
 a value which is obtained by multiplying said products for said patterns by coefficients according to said patterns, adding them together and dividing the result by a sum of said coefficients is used as the product of said conversion coefficient by said size difference.    
     
     
         13 . The semiconductor device manufacturing method according to  claim 8 , wherein a plurality of said patterns are formed, the method comprising the step of selecting a desired one of said patterns among said plurality of patterns, wherein 
 said optimum exposure value is calculated by calculating said size difference for the selected one of said patterns and using the size difference.    
     
     
         14 . The semiconductor device manufacturing method according to  claim 8 , wherein said pattern is a developed pattern formed by development, and 
 said step of detecting the size of the pattern includes the step of comparing a size of said developed pattern and a target value to calculate a size difference.    
     
     
         15 . The semiconductor device manufacturing method according to  claim 8 , wherein said pattern is an etching pattern formed by etching, and 
 said step of detecting the size of the pattern includes the step of comparing a size of said etched pattern and a target value to calculate a size difference.    
     
     
         16 . A semiconductor device, comprising a pattern which is formed by exposing a photosensitive material at an optimum exposure value calculated by using a difference between a size of a pattern formed after photolithography and a target value as well as an exposure value of an exposure device during said photolithography, developing said photosensitive material after the exposure, and performing an etching process using said photosensitive material after said development.