Selective & damage free Cu cleaning process for pre-dep, post etch/CMP

Abstract

A method for forming a copper containing microelectronic structure. There is first provided a substrate. There is then formed over the substrate a copper containing microelectronic structure comprising a copper containing layer and a non-copper containing layer, where the non-copper containing layer has formed thereupon a copper containing residue. Finally, there is then stripped from the non-copper containing layer the copper containing residue while employing a stripper composition comprising a non-aqueous coordinating solvent and a halogen radical producing specie. Additionally, the copper so dissolved may be recovered from a non-aqueously solvated copper halide compound dissolved within the non-aqueous solvent.

What is claimed is:  
     
         1 . A method for forming a copper containing microelectronic structure comprising: 
 providing a substrate,    forming over the substrate a copper containing microelectronic structure comprising a copper containing layer and a non-copper containing layer, where the non-copper containing layer has formed thereupon a copper containing residue; and    stripping from the non-copper containing layer the copper containing residue while employing a stripper composition comprising a non-aqueous coordinating solvent and a halogen radical producing specie.    
     
     
         2 . The method of  claim 1  wherein the substrate is employed within a microelectronic fabrication selected from the group consisting of integrated circuit microelectronic fabrications, ceramic substrate microelectronic fabrications, solar cell optoelectronic microelectronic fabrications, sensor image array optoelectronic microelectronic fabrications and display image array optoelectronic microelectronic fabrications.  
     
     
         3 . The method of  claim 1  wherein the copper containing layer contains about 100 weight percent copper.  
     
     
         4 . The method of  claim 1  wherein the non-copper containing layer is selected from the group of non-copper containing layers consisting of non-copper containing conductor layers, non-copper containing semiconductor layers and non-copper containing dielectric layers.  
     
     
         5 . The method of  claim 1  wherein the halogen radical producing specie is a chlorine radical producing specie.  
     
     
         6 . The method of  claim 5  wherein the chlorine radical producing specie is chosen from the group of chlorine radical producing species consisting of C1-C2 perchloro and hydrochloro chlorine radical producing species.  
     
     
         7 . The method of  claim 5  wherein the chlorine radical producing specie is carbon tetrachloride (CCl4).  
     
     
         8 . The method of  claim 1  wherein the non-aqueous coordinating solvent is chosen from the group of non-aqueous coordinating solvents consisting of acetonitrile (CH3CN), tetrahydrofuran (THF) and dimethylsulfoxide (DMSO).  
     
     
         9 . The method of  claim 1  wherein the non-aqueous coordinating solvent is dimethylsulfoxide (DMSO).  
     
     
         10 . A method for forming a copper containing microelectronic structure comprising: 
 providing a substrate;    forming over the substrate a copper containing microelectronic structure comprising a non-copper containing layer in conjunction with at least one of a copper containing layer and a copper containing residue; and    etching at least one of the copper containing layer and the copper containing residue while employing a stripper composition comprising a non-aqueous coordinating solvent and a halogen radical producing specie to form an etched microelectronic structure and a non-aqueous solvated copper halide compound dissolved within the non-aqueous coordinating solvent.    
     
     
         11 . The method of  claim 10  wherein the substrate is employed within a microelectronic fabrication selected from the group consisting of integrated circuit microelectronic fabrications, ceramic substrate microelectronic fabrications. solar cell optoelectronic microelectronic fabrications, sensor image array optoelectronic microelectronic fabrications and display image array optoelectronic microelectronic fabrications.  
     
     
         12 . The method of  claim 10  wherein the copper containing layer contains about 100 weight percent copper.  
     
     
         13 . The method of  claim 10  wherein the non-copper containing layer is selected from the group of non-copper containing layers consisting of non-copper containing conductor layers, non-copper containing semiconductor layers and non-copper containing dielectric layers.  
     
     
         14 . The method of  claim 10  wherein the halogen radical producing specie is a chlorine radical producing specie.  
     
     
         15 . The method of  claim 14  wherein the chlorine radical producing specie is chosen from the group of chlorine radical producing species consisting of C1-C2 perchloro and hydrochloro chlorine radical producing species.  
     
     
         16 . The method of  claim 14  wherein the chlorine radical producing specie is carbon tetrachloride (CCl4).  
     
     
         17 . The method of  claim 10  wherein the non-aqueous coordinating solvent is chosen from the group of non-aqueous coordinating solvents consisting of acetonitrile (CH3CN), tetrahydrofuran (THF) and dimethylsulfoxide (DMSO).  
     
     
         18 . The method of  claim 10  wherein the non-aqueous coordinating solvent is dimethylsulfoxide (DMSO).  
     
     
         19 . The method of  claim 10  further comprising recovering the copper from the copper halide compound.  
     
     
         20 . The method of  claim 19  wherein the copper is recovered by crystallizing a non-aqueous solvated copper halide compound from the non-aqueous solvent.  
     
     
         21 . The method of  claim 19  wherein the copper is recovered by extracting at least a portion of the copper halide compound into an aqueous solvent and electrodepositing therefrom a copper deposit.