Method of reducing water spotting and oxide growth on a semiconductor structure

Abstract

The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer.

What is claimed is:  
     
         1 . A method of treating a semiconductor structure in a single treatment vessel, comprising: 
 providing a treatment vessel;    performing a first treatment upon said semiconductor structure in a first portion of the treatment vessel;    rinsing said semiconductor structure in a second portion of the treatment vessel; and    drying said semiconductor structure in the second portion of the treatment vessel.    
     
     
         2 . The method of  claim 1 , wherein the first treatment comprises a chemical treatment.  
     
     
         3 . The method of  claim 1 , wherein the first treatment comprises a chemical process treatment selected from the group consisting of rinsing said semiconductor structure in an aqueous HF solution, performing an HF dry etch on said semiconductor structure, performing a buffered oxide etch on said semiconductor structure, and performing a polysilicon etch on said semiconductor structure.  
     
     
         4 . The method of  claim 1 , further comprising: 
 injecting a first gas that is inert to said semiconductor structure into the second portion of the treatment vessel.    
     
     
         5 . The method of  claim 4 , wherein the step of rinsing said semiconductor structure includes: 
 rinsing said semiconductor structure with deionized water in the presence of the first gas.    
     
     
         6 . The method of  claim 5 , further comprising: 
 submerging said semiconductor structure in a deionized water bath in the second portion of the treatment vessel.    
     
     
         7 . The method of  claim 4 , wherein the first gas includes nitrogen.  
     
     
         8 . The method of  claim 5 , further comprising: 
 forming a liquid layer on a surface of the deionized water bath in the second portion of the treatment vessel.    
     
     
         9 . The method of  claim 5 , wherein the first gas includes isopropyl alcohol.  
     
     
         10 . The method of  claim 5 , wherein the first gas includes isopropyl alcohol in a nitrogen carrier.  
     
     
         11 . The method of  claim 6 , further comprising: 
 separating said semiconductor structure from the deionized water bath.    
     
     
         12 . The method of  claim 11 , wherein the step of separating said semiconductor structure from the deionized water bath comprises drawing said semiconductor structure from the deionized water bath.  
     
     
         13 . The method of  claim 11 , wherein the step of separating said semiconductor structure from the deionized water bath comprises draining the deionized water bath from the treatment vessel.  
     
     
         14 . The method of  claim 13 , wherein the draining of the deionized water bath from the treatment vessel includes purging the second portion of the treatment vessel with an anhydrous organic liquid in an inert gas carrier.  
     
     
         15 . A method of treating a semiconductor structure in a first portion and a second portion of a single treatment vessel, comprising: 
 performing a first treatment upon said semiconductor structure in a first portion of the treatment vessel;    rinsing said semiconductor structure in a second portion of the treatment vessel; and    drying said semiconductor structure in the second portion of the treatment vessel.    
     
     
         16 . The method of  claim 15 , wherein the first treatment comprises a chemical treatment.  
     
     
         17 . The method of  claim 15 , wherein the first treatment comprises a chemical process treatment selected from the group consisting of rinsing said semiconductor structure in an aqueous HF solution, performing an HF dry etch on said semiconductor structure, performing a buffered oxide etch on said semiconductor structure, and performing a polysilicon etch on said semiconductor structure.  
     
     
         18 . The method of  claim 15 , further comprising: 
 injecting a first gas that is inert to said semiconductor structure into the second portion of the treatment vessel.    
     
     
         19 . The method of  claim 18 , wherein the step of rinsing said semiconductor structure includes: rinsing 
 said semiconductor structure with deionized water in the presence of the first gas.    
     
     
         20 . The method of  claim 15 , further comprising: 
 submerging said semiconductor structure in a deionized water bath in the second portion of the treatment vessel.