US2003190533A1PendingUtilityA1

Manufacture of masks and electronic parts

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Assignee: KODAK POLYCHROME GRAPHICS LLCPriority: Sep 9, 2000Filed: Jan 30, 2003Published: Oct 9, 2003
Est. expirySep 9, 2020(expired)· nominal 20-yr term from priority
Inventors:Kevin RayAnthony P. KitsonEduard KottmairHans-Horst GlattStefan Hilgart
Y10S430/145G03F 1/68Y10S430/106H05K 3/0082G03F 7/023H05K 3/0076
30
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Claims

Abstract

Imageable precursors for masks and for electronic parts comprise a polymeric layer applied to a substrate. The layer comprises at least one polymer having infra-red absorbing groups carried as pendent groups on the polymer backbone. Certain infrared absorbing groups may also act to insolubilize the polymer in a developer, until it is imagewise exposed to infra-red radiation. Imagewise application of heat, resulting from imagewise exposure of the precursor to infra-red radiation, renders the polymer layer more soluble in the developer than prior to exposure to the infra-red radiation.

Claims

exact text as granted — not AI-modified
The invention claimed is:  
     
         1 . A method of producing a mask, the method comprising: 
 (a) providing a precursor which comprises (i) a substrate, and (ii) a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the layer contains a dissolution inhibition compound admixed with the polymer that inhibits dissolution in the developer liquid prior to exposure of the polymer to infra-red radiation;    (b) imagewise exposing areas of the layer to infra-red radiation; and    (c) contacting the precursor with a developer liquid to remove the exposed areas of the layer.    
     
     
         2 . The method of  claim 1 , wherein the infra-red radiation is in the range 700-1200 nm.  
     
     
         3 . A method of producing a mask, the method comprising: 
 (a) providing a precursor which comprises (i) a substrate, and (ii) a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the film forming polymer comprises further pendent groups, selected from the group consisting of —O—SO 2 -tolyl, —O-dansyl, —O—SO 2 -thienyl, —O—SO 2 -naphthl, —O—CO—Ph, and combinations thereof, which inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation;    (b) imagewise exposing areas of the layer to infra-red radiation; and    (c) contacting the precursor with a developer liquid to remove the exposed areas of the layer.    
     
     
         4 . The method of  claim 3 , wherein the infra-red radiation is in the range 700-1200 nm.  
     
     
         5 . A method of producing a mask, the method comprising: 
 (a) providing a precursor which comprises (i) a substrate, and (ii) a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the film forming polymer comprises further pendent groups, selected from the group consisting of o-benzoquinonediazide moieties, o-naphthoquinonediazide moieties, and combinations thereof, which inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation;    (b) imagewise exposing areas of the layer to infra-red radiation; and    (c) contacting the precursor with a developer liquid to remove the exposed areas of the layer.    
     
     
         6 . The method of  claim 5 , wherein the infra-red radiation is in the range 700-1200 nm.  
     
     
         7 . A mask precursor comprising a substrate and a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the layer contains a dissolution inhibition compound admixed with the polymer that inhibits dissolution in the developer liquid prior to exposure of the polymer to infra-red radiation.  
     
     
         8 . The precursor of  claim 7 , wherein the polymer additionally comprises further pendent groups, which further pendent groups inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation.  
     
     
         9 . The precursor of  claim 7 , wherein the further pendent groups are selected from the group consisting of —O—SO 2 -tolyl, —O-dansyl, —O—SO 2 -thienyl, —O—SO 2 -naphthl, —O—CO—Ph, and combinations thereof.  
     
     
         10 . The precursor of  claim 7 , wherein the further pendent groups are selected from the group consisting of o-benzoquinonediazide moieties, o-naphthoquinonediazide moieties, and combinations thereof.  
     
     
         11 . The precursor of  claim 10 , wherein the further pendent groups comprise o-naphthoquinonediazide moieties.  
     
     
         12 . The precursor of  claim 7 , wherein the infra-red absorbing groups of the polymer themselves inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation.  
     
     
         13 . The precursor of  claim 7 , wherein the polymer has at least one group selected from —SO 2 NHR, —NHR, —SH and —OH, where R represents a hydrogen atom or a C 1-4  alkyl group.  
     
     
         14 . The precursor of  claim 13 , wherein the polymer comprises hydroxyl groups.  
     
     
         15 . The precursor of  claim 7 , wherein the layer is substantially insensitive to radiation of wavelength below 600 nm.  
     
     
         16 . The precursor of  claim 7 , wherein the polymer has infra-red absorbing groups which are residues of polymethine dyes or cyanine dyes.  
     
     
         17 . A mask precursor comprising a substrate and a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the film forming polymer comprises further pendent groups, selected from the group consisting of —O—SO 2 -tolyl, —O-dansyl, —O—SO 2 -thienyl, —O—SO 2 -naphthl, —O—CO—Ph, and combinations thereof, which inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation.  
     
     
         18 . The precursor of  claim 17 , wherein the infra-red absorbing groups of the polymer themselves inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation.  
     
     
         19 . The precursor of  claim 17 , wherein the polymer has at least one group selected from —SO 2 NHR, —NHR, —SH and —OH, where R represents a hydrogen atom or a C 1-4  alkyl group.  
     
     
         20 . The precursor of  claim 19 , wherein the polymer comprises hydroxyl groups.  
     
     
         21 . The precursor of  claim 17 , wherein the layer is substantially insensitive to radiation of wavelength below 600 nm.  
     
     
         22 . The precursor of  claim 17 , wherein the polymer has infra-red absorbing groups which are residues of polymethine dyes or cyanine dyes.  
     
     
         23 . A mask precursor comprising a substrate and a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the film forming polymer comprises further pendent groups, selected from the group consisting of o-benzoquinonediazide moieties, o-naphthoquinonediazide moieties, and combinations thereof, which inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation.  
     
     
         24 . The precursor of  claim 23 , wherein the further pendent groups comprise o-naphthoquinonediazide moieties.  
     
     
         25 . The precursor of  claim 23 , wherein the infra-red absorbing groups of the polymer themselves inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation.  
     
     
         26 . The precursor of  claim 23 , wherein the polymer has at least one group selected from —SO 2 NHR, —NHR, —SH and —OH, where R represents a hydrogen atom or a C 1-4  alkyl group.  
     
     
         27 . The precursor of  claim 26 , wherein the polymer comprises hydroxyl groups.  
     
     
         28 . The precursor of  claim 23 , wherein the layer is substantially insensitive to radiation of wavelength below 600 nm.  
     
     
         29 . The precursor of  claim 23 , wherein the polymer has infra-red absorbing groups which are residues of polymethine dyes or cyanine dyes.  
     
     
         30 . A method of producing an electronic part, the method comprising: 
 (a) providing a precursor which comprises (i) a substrate, and (ii) a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the layer contains a dissolution inhibition compound admixed with the polymer that inhibits dissolution in the developer liquid prior to exposure of the polymer to infra-red radiation;    (b) imagewise exposing areas of the layer to infra-red radiation; and    (c) contacting the precursor with a developer liquid to remove the exposed areas of the layer.    
     
     
         31 . The method of  claim 30 , wherein the infra-red radiation is in the range 700-1200 nm.  
     
     
         32 . A method of producing an electronic part, the method comprising: 
 (a) providing a precursor which comprises (i) a substrate, and (ii) a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the film forming polymer comprises further pendent groups, selected from the group consisting of —O—SO 2 -tolyl, —O-dansyl, —O—SO 2 -thienyl, —O—SO 2 -naphthl, —O—CO—Ph, and combinations thereof, which inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation;    (b) imagewise exposing areas of the layer to infra-red radiation; and    (c) contacting the precursor with a developer liquid to remove the exposed areas of the layer.    
     
     
         33 . The method of  claim 32 , wherein the infra-red radiation is in the range 700-1200 nm.  
     
     
         34 . A method of producing an electronic part, the method comprising: 
 (a) providing a precursor which comprises (i) a substrate, and (ii) a layer applied to the substrate, wherein the layer comprises a film-forming polymer having at least one pendent infra-red absorbing group, wherein the layer has a first solubility in a developer liquid prior to exposure to infra-red radiation, and a second solubility in the developer liquid after exposure to infra-red radiation, and the second solubility is greater than the first solubility, wherein the film forming polymer comprises further pendent groups, selected from the group consisting of o-benzoquinonediazide moieties, o-naphthoquinonediazide moieties, and combinations thereof, which inhibit the dissolution of the polymer in the developer liquid, prior to exposure of the polymer to infra-red radiation;    (b) imagewise exposing areas of the layer to infra-red radiation; and    (c) contacting the precursor with a developer liquid to remove the exposed areas of the layer.    
     
     
         35 . The method of  claim 34 , wherein the infra-red radiation is in the range 700-1200 nm.

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