Gaseous phase growing device

Abstract

A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.

1 . A vapor-phase growing unit comprising: 
 a reaction container in which a substrate is arranged,    a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and    a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas,    wherein the gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.    
     
     
         2 . A vapor-phase growing unit according to  claim 1 , wherein 
 the first gas introduced into the reaction container through the gas-spouting port of the first gas-introducing tube is adapted to be diffused along a surface of the substrate because of effect of a flow of the second gas introduced into the reaction container through the gas-spouting port of the second gas-introducing tube.    
     
     
         3 . A vapor-phase growing unit according to  claim 1  or  2 , wherein 
 the gas-spouting port of the first gas-introducing tube is formed by a slit-like through hole that opens in a direction parallel to a surface of the substrate.  
 
     
     
         4 . A vapor-phase growing unit according to  claim 3 , wherein 
 the slit-like through hole has an angle of aperture of 30 degrees to 160 degrees, with respect to the first gas-introducing tube.    
     
     
         5 . A vapor-phase growing unit according to  claim 1  or  2 , wherein 
 the gas-spouting port of the first gas-introducing tube is formed by a plurality of slit-like portions that open in a direction parallel to a surface of the substrate, and  
 an intermediate wall exists between adjacent two slit-like portions.  
 
     
     
         6 . A vapor-phase growing unit according to any of  claims 1  to  5 , wherein 
 the gas-spouting port of the second gas-introducing tube is formed by a circular through hole.  
 
     
     
         7 . A vapor-phase growing unit according to any of  claims 1  to  6 , wherein 
 a front-face direction of the gas-spouting port of the first gas-introducing tube and a front-face direction of the gas-spouting port of the second gas-introducing tube are oriented toward the center of the substrate arranged in the reaction container.  
 
     
     
         8 . A vapor-phase growing unit according to  claim 7 , wherein 
 the front-face direction of the gas-spouting port of the first gas-introducing tube and the front-face direction of the gas-spouting port of the second gas-introducing tube make an angle not more than 45 degrees.    
     
     
         9 . A vapor-phase growing unit according to any of  claims 1  to  8 , wherein 
 a plurality of substrates are adapted to be arranged at intervals in a vertical direction in the reaction container,  
 a plurality of gas-spouting ports of the first gas-introducing tube are provided correspondingly to respective heights of the substrates, and  
 a plurality of gas-spouting ports of the second gas-introducing tube are provided correspondingly to the respective heights of the substrates.  
 
     
     
         10 . A vapor-phase growing unit according to any of  claims 1  to  9 , wherein 
 each of the first gas and the second gas is any of 
 (1) Sr[[(CH 3 ) 3 CCO] 2 CH] 2  gas and O 2  gas,  
 (2) Ti(OC 3 H 7 -i) 2 [[(CH 3 ) 3 CCO] 2 CH] 2  gas and O 2  gas,  
 (3) TiCl 4  gas and NH 3  gas,  
 (4) Zr[OC(CH 3 ) 3 ] 4  gas and O 2  gas, and  
 (5) Ta(OC 2 H 5 ) 5  gas and O 2  gas.  
 
 
     
     
         11 . A method of forming a vapor-phase-growth film on a surface of a substrate by using a vapor-phase growing unit, the vapor-phase growing unit including: 
 a reaction container in which a substrate is arranged,    a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and    a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas,    the gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube being arranged along an outside periphery of the substrate arranged in the reaction container;    the method comprising: 
 a step of supplying the first gas from the gas-spouting port of the first gas-introducing tube into the reaction container, and  
 a step of supplying the second gas from the gas-spouting port of the second gas-introducing tube into the reaction container.  
   
     
     
         12 . A method according to  claim 11 , wherein 
 the step of supplying the first gas from the gas-spouting port of the first gas-introducing tube into the reaction container and the step of supplying the second gas from the gas-spouting port of the second gas-introducing tube into the reaction container are conducted at the same time.    
     
     
         13 . A method according to  claim 11  or  12 , wherein 
 each of the first gas and the second gas is any of 
 (1) Sr[[(CH 3 ) 3 CCO] 2 CH] 2  gas and O 2  gas,  
 (2) Ti(OC 3 H 7 -i) 2 [[(CH 3 ) 3 CCO] 2 CH] 2  gas and O 2  gas,  
 (3) TiCl 4  gas and NH 3  gas,  
 (4) Zr[OC(CH 3 ) 3 ] 4  gas and O 2  gas, and  
 (5) Ta(OC 2 H 5 ) 5  gas and O 2  gas.