Method for improving a quality of dielectric layer and semiconductor device

Abstract

There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.

What is claimed:  
     
         1 . A semiconductor device comprising: 
 a substrate;    a silicon oxide insulating film free of carbon and hydrogen formed on said substrate.    
     
     
         2 . A semiconductor device according to  claim 1  produced by a method comprising: 
 forming a precursor silicon oxide insulating film containing carbon and hydrogen on the substrate; and  
 heating the precursor silicon oxide film by contacting an exposed surface of the precursor silicon oxide film with a steam-containing atmosphere after the precursor silicon oxide film is formed, so that the carbon and hydrogen are oxidized and removed from the precursor silicon oxide insulating film to form the silicon oxide insulating film free of carbon and hydrogen.  
 
     
     
         3 . A semiconductor device according to  claim 1 , wherein the silicon oxide film is formed by a chemical vapor deposition method using a reaction gas containing TEOS (Tetraethoxysilane).  
     
     
         4 . A semiconductor device according to  claim 1 , wherein the heating is performed at a temperature in a range of 800° C.-1100° C.  
     
     
         5 . A semiconductor device comprising a substrate and a silicon oxide insulating film of reduced carbon and hydrogen content formed on the substrate, said semiconductor device formed by a process comprising: 
 forming a precursor silicon oxide insulating film containing carbon and hydrogen on said substrate; and    heating the precursor silicon oxide film by contacting an exposed surface of the precursor silicon oxide film with a steam-containing atmosphere after the precursor silicon oxide film is formed, so that the carbon and hydrogen are oxidized and removed from the precursor silicon oxide insulating film to provide the silicon oxide film of reduced carbon and hydrogen content.    
     
     
         6 . A semiconductor device according to  claim 5  wherein the silicon oxide film is formed by a chemical vapor deposition method using a reaction gas containing TEOS (Tetraethoxysilane).