Ag alloy film and sputtering-target for the Ag alloy film

Abstract

A composition of an Ag alloy film as a thin film for electronic devices and target material to form thereof by a sputtering process are disclosed. The Ag alloy film consists of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities. The Ag alloy film may be used as a wiring film or a reflective film for flat panel display devices. The sputtering-target material for forming the Ag alloy film consists of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.

What is claimed is:  
     
         1 . An Ag alloy film consisting essentially of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         2 . An Ag alloy film According to  claim 1 , which consists essentially of 0.1 to 0.5 atomic % of Sm, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         3 . An Ag alloy film According to  claim 1 , which consists essentially of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 0.5 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         4 . An Ag alloy film According to  claim 1 , which consists essentially of 0.1 to 0.5 atomic % of Sm, 0.1 to 0.5 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         5 . An Ag alloy film according to  claim 1 , which is of a wiring film for a flat panel display.  
     
     
         6 . An Ag alloy film according to  claim 1 , which is of a reflective film for a flat panel display.  
     
     
         7 . A sputtering-target for an Ag alloy film, which consists essentially of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         8 . A sputtering-target for an Ag alloy film according to  claim 7 , which consists essentially of 0.1 to 0.5 atomic % of Sm, 0.1 to 1.0 atomic % in total of at lest one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         9 . A sputtering-target for an Ag alloy film according to  claim 7 , which consists essentially of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 0.5 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.  
     
     
         10 . A sputtering-target for an Ag alloy film according to  claim 7 , which consists essentially of 0.1 to 0.5 atomic % of Sm, 0.1 to 0.5 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities.